MRFE6VP8600HSR5
  • Share:

NXP USA Inc. MRFE6VP8600HSR5

Manufacturer No:
MRFE6VP8600HSR5
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 2CH 130V 860MHZ NI1230S
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MRFE6VP8600HSR5 is a high-performance RF power transistor manufactured by NXP Semiconductors. This device is designed to meet the demanding requirements of industrial, scientific, and medical (ISM) applications, as well as analog and digital television transmitters. It is known for its high power handling capability and reliability, making it a robust choice for various high-frequency applications.

Key Specifications

Parameter Value
Frequency Range Up to 860 MHz
Pulsed Power Output Up to 600 W
Drain-Source Voltage (Vds) 50 V
Gate-Source Voltage (Vgs) -6 to +10 V
Thermal Resistance (Rth) 0.5 °C/W (Typical)
Package Type AIR cavity package
Operating Temperature -40°C to +150°C

Key Features

  • High power handling capability up to 600 W
  • Wide frequency range up to 860 MHz
  • High gain and efficiency
  • Robust AIR cavity package for reliable operation
  • Wide operating temperature range from -40°C to +150°C

Applications

  • Industrial, Scientific, and Medical (ISM) applications
  • Analog and digital television transmitters
  • High-frequency amplifiers and transmitters
  • Radar systems
  • Broadcasting equipment

Q & A

  1. What is the maximum power output of the MRFE6VP8600HSR5?

    The MRFE6VP8600HSR5 has a maximum pulsed power output of up to 600 W.

  2. What is the frequency range of the MRFE6VP8600HSR5?

    The device operates up to a frequency of 860 MHz.

  3. What is the typical thermal resistance of the MRFE6VP8600HSR5?

    The thermal resistance (Rth) is typically 0.5 °C/W.

  4. What is the package type of the MRFE6VP8600HSR5?

    The device is packaged in an AIR cavity package.

  5. What are the typical applications of the MRFE6VP8600HSR5?

    It is commonly used in ISM applications, analog and digital television transmitters, high-frequency amplifiers, radar systems, and broadcasting equipment.

  6. What is the operating temperature range of the MRFE6VP8600HSR5?

    The operating temperature range is from -40°C to +150°C.

  7. What is the drain-source voltage (Vds) rating of the MRFE6VP8600HSR5?

    The drain-source voltage (Vds) rating is 50 V.

  8. What is the gate-source voltage (Vgs) range of the MRFE6VP8600HSR5?

    The gate-source voltage (Vgs) range is from -6 to +10 V.

  9. Is the MRFE6VP8600HSR5 suitable for high-frequency applications?

    Yes, it is designed for high-frequency applications and offers high gain and efficiency.

  10. Where can I find detailed specifications for the MRFE6VP8600HSR5?

    Detailed specifications can be found on official NXP websites, as well as on distributor sites such as Digi-Key, Mouser, and Lisle Apex.

Product Attributes

Transistor Type:LDMOS (Dual)
Frequency:860MHz
Gain:19.3dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:1.4 A
Power - Output:125W
Voltage - Rated:130 V
Package / Case:NI-1230S
Supplier Device Package:NI-1230S
0 Remaining View Similar

In Stock

-
279

Please send RFQ , we will respond immediately.

Same Series
MRFE6VP8600HR5
MRFE6VP8600HR5
FET RF 2CH 130V 860MHZ NI-1230
MRFE6VP8600HR6
MRFE6VP8600HR6
FET RF 2CH 130V 860MHZ NI1230H
MRFE6VP8600HSR6
MRFE6VP8600HSR6
FET RF 2CH 130V 860MHZ NI1230S

Similar Products

Part Number MRFE6VP8600HSR5 MRFE6VP8600HSR6 MRFE6VP8600HR5
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Discontinued at Digi-Key Obsolete
Transistor Type LDMOS (Dual) LDMOS (Dual) LDMOS (Dual)
Frequency 860MHz 860MHz 860MHz
Gain 19.3dB 19.3dB 19.3dB
Voltage - Test 50 V 50 V 50 V
Current Rating (Amps) - - -
Noise Figure - - -
Current - Test 1.4 A 1.4 A 1.4 A
Power - Output 125W 125W 125W
Voltage - Rated 130 V 130 V 130 V
Package / Case NI-1230S NI-1230S NI-1230
Supplier Device Package NI-1230S NI-1230S NI-1230

Related Product By Categories

MMBF4416A
MMBF4416A
onsemi
JFET N-CH 35V 15MA SOT23
BLF184XRGJ
BLF184XRGJ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
BLF8G10LS-300PU
BLF8G10LS-300PU
Ampleon USA Inc.
RF FET LDMOS 65V 20.5DB SOT539B
SD2942W
SD2942W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M244
BF998E6327
BF998E6327
Infineon Technologies
BF998 - RF SMALL SIGNAL TRANSIST
BF545A,215
BF545A,215
NXP USA Inc.
JFET N-CH 30V 6.5MA SOT23
BLF878,112
BLF878,112
Ampleon USA Inc.
RF FET LDMOS 89V 21DB SOT979A
PD85004
PD85004
STMicroelectronics
FET RF 40V 870MHZ
PD20010-E
PD20010-E
STMicroelectronics
TRANS RF N-CH FET POWERSO-10RF
MW7IC2425NBR1
MW7IC2425NBR1
NXP USA Inc.
FET RF 65V 2.45GHZ TO-272-16
BLF7G24LS-140
BLF7G24LS-140
Ampleon USA Inc.
RF FET LDMOS 140W SOT502B
BLF7G20LS-90PH
BLF7G20LS-90PH
Ampleon USA Inc.
RF FET LDMOS 90W CDFM4

Related Product By Brand

MC9S08PL4CTG
MC9S08PL4CTG
NXP USA Inc.
IC MCU 8BIT 4KB FLASH 16TSSOP
MK10DX128VLH7
MK10DX128VLH7
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
S9S12G64ACLH
S9S12G64ACLH
NXP USA Inc.
IC MCU 16BIT 64KB FLASH 64LQFP
S9S12G128F0CLLR
S9S12G128F0CLLR
NXP USA Inc.
IC MCU 16BIT 128KB FLASH 100LQFP
MCIMX6U6AVM08ADR
MCIMX6U6AVM08ADR
NXP USA Inc.
I.MX6 ROM PERF ENHAN
MIMX8ML6CVNKZAB
MIMX8ML6CVNKZAB
NXP USA Inc.
IC I.MX 8M PLUS QUAD BGA
74HC2G08DC/C125
74HC2G08DC/C125
NXP USA Inc.
IC GATE AND 2CH 2-INP 8VSSOP
74AHC595PW/AUJ
74AHC595PW/AUJ
NXP USA Inc.
IC SHIFT REGISTER 8BIT 16-TSSOP
TEA18363T/2J
TEA18363T/2J
NXP USA Inc.
IC OFFLINE SWITCH FLYBACK 8SO
BGU7258X
BGU7258X
NXP USA Inc.
IC RF AMP ISM 5GHZ-6GHZ 6HXSON
MFRC53001T/0FE,112
MFRC53001T/0FE,112
NXP USA Inc.
IC RFID READER 13.56MHZ 32SO
MFRC63002HN,551
MFRC63002HN,551
NXP USA Inc.
IC RFID READER 13.56MHZ 32HVQFN