MRFE6VP8600HSR5
  • Share:

NXP USA Inc. MRFE6VP8600HSR5

Manufacturer No:
MRFE6VP8600HSR5
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 2CH 130V 860MHZ NI1230S
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MRFE6VP8600HSR5 is a high-performance RF power transistor manufactured by NXP Semiconductors. This device is designed to meet the demanding requirements of industrial, scientific, and medical (ISM) applications, as well as analog and digital television transmitters. It is known for its high power handling capability and reliability, making it a robust choice for various high-frequency applications.

Key Specifications

Parameter Value
Frequency Range Up to 860 MHz
Pulsed Power Output Up to 600 W
Drain-Source Voltage (Vds) 50 V
Gate-Source Voltage (Vgs) -6 to +10 V
Thermal Resistance (Rth) 0.5 °C/W (Typical)
Package Type AIR cavity package
Operating Temperature -40°C to +150°C

Key Features

  • High power handling capability up to 600 W
  • Wide frequency range up to 860 MHz
  • High gain and efficiency
  • Robust AIR cavity package for reliable operation
  • Wide operating temperature range from -40°C to +150°C

Applications

  • Industrial, Scientific, and Medical (ISM) applications
  • Analog and digital television transmitters
  • High-frequency amplifiers and transmitters
  • Radar systems
  • Broadcasting equipment

Q & A

  1. What is the maximum power output of the MRFE6VP8600HSR5?

    The MRFE6VP8600HSR5 has a maximum pulsed power output of up to 600 W.

  2. What is the frequency range of the MRFE6VP8600HSR5?

    The device operates up to a frequency of 860 MHz.

  3. What is the typical thermal resistance of the MRFE6VP8600HSR5?

    The thermal resistance (Rth) is typically 0.5 °C/W.

  4. What is the package type of the MRFE6VP8600HSR5?

    The device is packaged in an AIR cavity package.

  5. What are the typical applications of the MRFE6VP8600HSR5?

    It is commonly used in ISM applications, analog and digital television transmitters, high-frequency amplifiers, radar systems, and broadcasting equipment.

  6. What is the operating temperature range of the MRFE6VP8600HSR5?

    The operating temperature range is from -40°C to +150°C.

  7. What is the drain-source voltage (Vds) rating of the MRFE6VP8600HSR5?

    The drain-source voltage (Vds) rating is 50 V.

  8. What is the gate-source voltage (Vgs) range of the MRFE6VP8600HSR5?

    The gate-source voltage (Vgs) range is from -6 to +10 V.

  9. Is the MRFE6VP8600HSR5 suitable for high-frequency applications?

    Yes, it is designed for high-frequency applications and offers high gain and efficiency.

  10. Where can I find detailed specifications for the MRFE6VP8600HSR5?

    Detailed specifications can be found on official NXP websites, as well as on distributor sites such as Digi-Key, Mouser, and Lisle Apex.

Product Attributes

Transistor Type:LDMOS (Dual)
Frequency:860MHz
Gain:19.3dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:1.4 A
Power - Output:125W
Voltage - Rated:130 V
Package / Case:NI-1230S
Supplier Device Package:NI-1230S
0 Remaining View Similar

In Stock

-
279

Please send RFQ , we will respond immediately.

Same Series
MRFE6VP8600HR5
MRFE6VP8600HR5
FET RF 2CH 130V 860MHZ NI-1230
MRFE6VP8600HR6
MRFE6VP8600HR6
FET RF 2CH 130V 860MHZ NI1230H
MRFE6VP8600HSR6
MRFE6VP8600HSR6
FET RF 2CH 130V 860MHZ NI1230S

Similar Products

Part Number MRFE6VP8600HSR5 MRFE6VP8600HSR6 MRFE6VP8600HR5
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Discontinued at Digi-Key Obsolete
Transistor Type LDMOS (Dual) LDMOS (Dual) LDMOS (Dual)
Frequency 860MHz 860MHz 860MHz
Gain 19.3dB 19.3dB 19.3dB
Voltage - Test 50 V 50 V 50 V
Current Rating (Amps) - - -
Noise Figure - - -
Current - Test 1.4 A 1.4 A 1.4 A
Power - Output 125W 125W 125W
Voltage - Rated 130 V 130 V 130 V
Package / Case NI-1230S NI-1230S NI-1230
Supplier Device Package NI-1230S NI-1230S NI-1230

Related Product By Categories

BLF183XRSU
BLF183XRSU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121B
BLF7G20LS-90P,112
BLF7G20LS-90P,112
NXP USA Inc.
RF PFET, 2-ELEMENT, L BAND, SILI
PD54008-E
PD54008-E
STMicroelectronics
FET RF 25V 500MHZ PWRSO10
CLF1G0035-100H
CLF1G0035-100H
Ampleon USA Inc.
CLF1G0035-100 - 100W BROADBAND R
BF909R,215
BF909R,215
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143
BLF404,115
BLF404,115
Ampleon USA Inc.
RF FET NCHA 40V 11.5DB SOT409A
BLF6G27LS-75,118
BLF6G27LS-75,118
Ampleon USA Inc.
RF FET LDMOS 65V SOT502B
BLF7G21LS-160P,112
BLF7G21LS-160P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121B
BLF6G22LS-40P,112
BLF6G22LS-40P,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT1121B
NE5550279A-T1-A
NE5550279A-T1-A
CEL
FET RF 30V 900MHZ 79A
BLF6G27-10GHJ
BLF6G27-10GHJ
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
MMBF5485_NB50012
MMBF5485_NB50012
onsemi
IC POWER MANAGEMENT

Related Product By Brand

FRDM-K64F-AGM04
FRDM-K64F-AGM04
NXP USA Inc.
KIT CONTAINING THE FRDM-K64F AND
BFG520,235
BFG520,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
PMBT3906/TE1215
PMBT3906/TE1215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
PCF85063TP/1Z
PCF85063TP/1Z
NXP USA Inc.
IC RTC CLK/CALENDAR I2C 8-SON
SAA7706H/N210,518
SAA7706H/N210,518
NXP USA Inc.
IC CAR RADIO DSP 80-QFP
LPC11E67JBD48E
LPC11E67JBD48E
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 48LQFP
LS1012AXN7KKB
LS1012AXN7KKB
NXP USA Inc.
LS1012A XT 1GHZ RV2
UJA1075ATW/3V3WD,1
UJA1075ATW/3V3WD,1
NXP USA Inc.
IC INTFACE SPECIALIZED 32HTSSOP
74AHCT1G04GW-Q100125
74AHCT1G04GW-Q100125
NXP USA Inc.
INVERTER, AHCT/VHCT/VT SERIES
MWCT1013VLHSTR
MWCT1013VLHSTR
NXP USA Inc.
32BIT256K FLASHSTR CTM
SA630D/01,118
SA630D/01,118
NXP USA Inc.
IC RF SWITCH SPDT 1GHZ 8SO
MMA8652FCR1
MMA8652FCR1
NXP USA Inc.
ACCELEROMETER 2-8G I2C 10DFN