MRFE6VP8600HSR5
  • Share:

NXP USA Inc. MRFE6VP8600HSR5

Manufacturer No:
MRFE6VP8600HSR5
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 2CH 130V 860MHZ NI1230S
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MRFE6VP8600HSR5 is a high-performance RF power transistor manufactured by NXP Semiconductors. This device is designed to meet the demanding requirements of industrial, scientific, and medical (ISM) applications, as well as analog and digital television transmitters. It is known for its high power handling capability and reliability, making it a robust choice for various high-frequency applications.

Key Specifications

Parameter Value
Frequency Range Up to 860 MHz
Pulsed Power Output Up to 600 W
Drain-Source Voltage (Vds) 50 V
Gate-Source Voltage (Vgs) -6 to +10 V
Thermal Resistance (Rth) 0.5 °C/W (Typical)
Package Type AIR cavity package
Operating Temperature -40°C to +150°C

Key Features

  • High power handling capability up to 600 W
  • Wide frequency range up to 860 MHz
  • High gain and efficiency
  • Robust AIR cavity package for reliable operation
  • Wide operating temperature range from -40°C to +150°C

Applications

  • Industrial, Scientific, and Medical (ISM) applications
  • Analog and digital television transmitters
  • High-frequency amplifiers and transmitters
  • Radar systems
  • Broadcasting equipment

Q & A

  1. What is the maximum power output of the MRFE6VP8600HSR5?

    The MRFE6VP8600HSR5 has a maximum pulsed power output of up to 600 W.

  2. What is the frequency range of the MRFE6VP8600HSR5?

    The device operates up to a frequency of 860 MHz.

  3. What is the typical thermal resistance of the MRFE6VP8600HSR5?

    The thermal resistance (Rth) is typically 0.5 °C/W.

  4. What is the package type of the MRFE6VP8600HSR5?

    The device is packaged in an AIR cavity package.

  5. What are the typical applications of the MRFE6VP8600HSR5?

    It is commonly used in ISM applications, analog and digital television transmitters, high-frequency amplifiers, radar systems, and broadcasting equipment.

  6. What is the operating temperature range of the MRFE6VP8600HSR5?

    The operating temperature range is from -40°C to +150°C.

  7. What is the drain-source voltage (Vds) rating of the MRFE6VP8600HSR5?

    The drain-source voltage (Vds) rating is 50 V.

  8. What is the gate-source voltage (Vgs) range of the MRFE6VP8600HSR5?

    The gate-source voltage (Vgs) range is from -6 to +10 V.

  9. Is the MRFE6VP8600HSR5 suitable for high-frequency applications?

    Yes, it is designed for high-frequency applications and offers high gain and efficiency.

  10. Where can I find detailed specifications for the MRFE6VP8600HSR5?

    Detailed specifications can be found on official NXP websites, as well as on distributor sites such as Digi-Key, Mouser, and Lisle Apex.

Product Attributes

Transistor Type:LDMOS (Dual)
Frequency:860MHz
Gain:19.3dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:1.4 A
Power - Output:125W
Voltage - Rated:130 V
Package / Case:NI-1230S
Supplier Device Package:NI-1230S
0 Remaining View Similar

In Stock

-
279

Please send RFQ , we will respond immediately.

Same Series
MRFE6VP8600HR5
MRFE6VP8600HR5
FET RF 2CH 130V 860MHZ NI-1230
MRFE6VP8600HR6
MRFE6VP8600HR6
FET RF 2CH 130V 860MHZ NI1230H
MRFE6VP8600HSR6
MRFE6VP8600HSR6
FET RF 2CH 130V 860MHZ NI1230S

Similar Products

Part Number MRFE6VP8600HSR5 MRFE6VP8600HSR6 MRFE6VP8600HR5
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Discontinued at Digi-Key Obsolete
Transistor Type LDMOS (Dual) LDMOS (Dual) LDMOS (Dual)
Frequency 860MHz 860MHz 860MHz
Gain 19.3dB 19.3dB 19.3dB
Voltage - Test 50 V 50 V 50 V
Current Rating (Amps) - - -
Noise Figure - - -
Current - Test 1.4 A 1.4 A 1.4 A
Power - Output 125W 125W 125W
Voltage - Rated 130 V 130 V 130 V
Package / Case NI-1230S NI-1230S NI-1230
Supplier Device Package NI-1230S NI-1230S NI-1230

Related Product By Categories

CGHV96100F2
CGHV96100F2
Wolfspeed, Inc.
RF MOSFET HEMT 40V 440210
BLF184XRGQ
BLF184XRGQ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
CLF1G0060-10
CLF1G0060-10
Ampleon USA Inc.
CLF1G0060-10 - 10W BROADBAND RF
SD2942W
SD2942W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M244
PD54008L-E
PD54008L-E
STMicroelectronics
TRANSISTOR RF 5X5 POWERFLAT
BLF8G09LS-270GWJ
BLF8G09LS-270GWJ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
BLF3G21-6,112
BLF3G21-6,112
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BLF647,112
BLF647,112
Ampleon USA Inc.
RF FET LDMOS 65V 14.5DB SOT540A
SD2918
SD2918
STMicroelectronics
TRANS RF N-CH HF/VHF/UHF M113
PD55003
PD55003
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
PD85004
PD85004
STMicroelectronics
FET RF 40V 870MHZ
NE5550234-AZ
NE5550234-AZ
CEL
FET RF 30V 900MHZ 3MINIMOLD

Related Product By Brand

BUK98150-55A,135
BUK98150-55A,135
NXP USA Inc.
MOSFET N-CH 55V 5.5A SOT-223
MC9S08AC16CFGE
MC9S08AC16CFGE
NXP USA Inc.
IC MCU 8BIT 16KB FLASH 44LQFP
LPC11U24FBD48/301,
LPC11U24FBD48/301,
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 48LQFP
MIMX8ML6CVNKZAB
MIMX8ML6CVNKZAB
NXP USA Inc.
IC I.MX 8M PLUS QUAD BGA
TJA1049TK/3/1Z
TJA1049TK/3/1Z
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8HVSON
UJA1168TK,118
UJA1168TK,118
NXP USA Inc.
IC TRANSCEIVER FULL 1/1 14HVSON
MCZ33904C5EKR2
MCZ33904C5EKR2
NXP USA Inc.
IC INTERFACE SPECIALIZED 32SOIC
74LVC3G17DP-Q100125
74LVC3G17DP-Q100125
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
74LVC2G32DC-Q100125
74LVC2G32DC-Q100125
NXP USA Inc.
OR GATE, LVC/LCX/Z SERIES
MC56F82723VLC557
MC56F82723VLC557
NXP USA Inc.
MICROCONTROLLER, 32-BIT, FLASH,
PCF7941ATSM2AB120,
PCF7941ATSM2AB120,
NXP USA Inc.
IC REMOTE KEYLESS ENTRY 20SSOP
MPXV5100GC6U
MPXV5100GC6U
NXP USA Inc.
SENSOR GAUGE PRESS 14.5PSI MAX