MRFE6VP8600HSR5
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NXP USA Inc. MRFE6VP8600HSR5

Manufacturer No:
MRFE6VP8600HSR5
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 2CH 130V 860MHZ NI1230S
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MRFE6VP8600HSR5 is a high-performance RF power transistor manufactured by NXP Semiconductors. This device is designed to meet the demanding requirements of industrial, scientific, and medical (ISM) applications, as well as analog and digital television transmitters. It is known for its high power handling capability and reliability, making it a robust choice for various high-frequency applications.

Key Specifications

Parameter Value
Frequency Range Up to 860 MHz
Pulsed Power Output Up to 600 W
Drain-Source Voltage (Vds) 50 V
Gate-Source Voltage (Vgs) -6 to +10 V
Thermal Resistance (Rth) 0.5 °C/W (Typical)
Package Type AIR cavity package
Operating Temperature -40°C to +150°C

Key Features

  • High power handling capability up to 600 W
  • Wide frequency range up to 860 MHz
  • High gain and efficiency
  • Robust AIR cavity package for reliable operation
  • Wide operating temperature range from -40°C to +150°C

Applications

  • Industrial, Scientific, and Medical (ISM) applications
  • Analog and digital television transmitters
  • High-frequency amplifiers and transmitters
  • Radar systems
  • Broadcasting equipment

Q & A

  1. What is the maximum power output of the MRFE6VP8600HSR5?

    The MRFE6VP8600HSR5 has a maximum pulsed power output of up to 600 W.

  2. What is the frequency range of the MRFE6VP8600HSR5?

    The device operates up to a frequency of 860 MHz.

  3. What is the typical thermal resistance of the MRFE6VP8600HSR5?

    The thermal resistance (Rth) is typically 0.5 °C/W.

  4. What is the package type of the MRFE6VP8600HSR5?

    The device is packaged in an AIR cavity package.

  5. What are the typical applications of the MRFE6VP8600HSR5?

    It is commonly used in ISM applications, analog and digital television transmitters, high-frequency amplifiers, radar systems, and broadcasting equipment.

  6. What is the operating temperature range of the MRFE6VP8600HSR5?

    The operating temperature range is from -40°C to +150°C.

  7. What is the drain-source voltage (Vds) rating of the MRFE6VP8600HSR5?

    The drain-source voltage (Vds) rating is 50 V.

  8. What is the gate-source voltage (Vgs) range of the MRFE6VP8600HSR5?

    The gate-source voltage (Vgs) range is from -6 to +10 V.

  9. Is the MRFE6VP8600HSR5 suitable for high-frequency applications?

    Yes, it is designed for high-frequency applications and offers high gain and efficiency.

  10. Where can I find detailed specifications for the MRFE6VP8600HSR5?

    Detailed specifications can be found on official NXP websites, as well as on distributor sites such as Digi-Key, Mouser, and Lisle Apex.

Product Attributes

Transistor Type:LDMOS (Dual)
Frequency:860MHz
Gain:19.3dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:1.4 A
Power - Output:125W
Voltage - Rated:130 V
Package / Case:NI-1230S
Supplier Device Package:NI-1230S
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Same Series
MRFE6VP8600HSR5
MRFE6VP8600HSR5
FET RF 2CH 130V 860MHZ NI1230S
MRFE6VP8600HR6
MRFE6VP8600HR6
FET RF 2CH 130V 860MHZ NI1230H
MRFE6VP8600HSR6
MRFE6VP8600HSR6
FET RF 2CH 130V 860MHZ NI1230S

Similar Products

Part Number MRFE6VP8600HSR5 MRFE6VP8600HSR6 MRFE6VP8600HR5
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Discontinued at Digi-Key Obsolete
Transistor Type LDMOS (Dual) LDMOS (Dual) LDMOS (Dual)
Frequency 860MHz 860MHz 860MHz
Gain 19.3dB 19.3dB 19.3dB
Voltage - Test 50 V 50 V 50 V
Current Rating (Amps) - - -
Noise Figure - - -
Current - Test 1.4 A 1.4 A 1.4 A
Power - Output 125W 125W 125W
Voltage - Rated 130 V 130 V 130 V
Package / Case NI-1230S NI-1230S NI-1230
Supplier Device Package NI-1230S NI-1230S NI-1230

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