BLF245B
  • Share:

Rochester Electronics, LLC BLF245B

Manufacturer No:
BLF245B
Manufacturer:
Rochester Electronics, LLC
Package:
Bulk
Description:
BLF245B - VHF PUSH-PULL POWER VD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF245B is a dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range. Originally developed by Ampleon, this device has been transferred to Rochester Electronics, LLC. It is encapsulated in a 4-lead, SOT279A balanced flange package with a ceramic cap, providing a common source connection for the transistors through the mounting flange.

Key Specifications

Symbol Parameter Conditions Min Max Unit
f range frequency range 25 175 MHz
P L(1dB) nominal output power at 1 dB gain compression Test signal: CW 30 W
G p power gain P L = 30 W; V DS = 28 V 14 18 dB
η D drain efficiency P L = 30 W; V DS = 28 V; f = 175 MHz; I Dq = 25 mA 55 65 %
P L output power 30 W

Key Features

  • High power gain: Ensures efficient amplification in VHF frequency range applications.
  • Easy power control: Simplifies the management of power levels during operation.
  • Good thermal stability: Maintains performance under varying temperature conditions.
  • Gold metallization: Enhances reliability and durability of the device.

Applications

The BLF245B is primarily used in large signal amplifier applications within the VHF frequency range. This includes various radio frequency (RF) applications such as broadcast, navigation, and safety radio systems.

Q & A

  1. What is the BLF245B transistor used for?

    The BLF245B is used for large signal amplifier applications in the VHF frequency range.

  2. Who is the current manufacturer of the BLF245B?

    The BLF245B is currently managed by Rochester Electronics, LLC, after being transferred from Ampleon.

  3. What is the package type of the BLF245B?

    The BLF245B is encapsulated in a 4-lead, SOT279A balanced flange package with a ceramic cap.

  4. What is the nominal output power of the BLF245B at 1 dB gain compression?

    The nominal output power at 1 dB gain compression is 30 W.

  5. What is the typical power gain of the BLF245B?

    The typical power gain is 18 dB under specified conditions.

  6. What is the drain efficiency of the BLF245B?

    The drain efficiency is typically 65% under specified conditions.

  7. What are the key features of the BLF245B?

    The key features include high power gain, easy power control, good thermal stability, and gold metallization for reliability.

  8. Where can I purchase the BLF245B?

    The BLF245B can be purchased from Rochester Electronics, LLC, and other authorized distributors.

  9. What is the frequency range of the BLF245B?

    The frequency range is from 25 MHz to 175 MHz.

  10. What is the typical output power of the BLF245B?

    The typical output power is 30 W.

Product Attributes

Transistor Type:2 N-Channel (Dual) Common Source
Frequency:175MHz
Gain:18dB
Voltage - Test:28 V
Current Rating (Amps):1mA
Noise Figure:- 
Current - Test:50 mA
Power - Output:30W
Voltage - Rated:65 V
Package / Case:SOT-279A
Supplier Device Package:CDFM4
0 Remaining View Similar

In Stock

$86.41
9

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HT20/AA
RD15S10HT20/AA
CONN D-SUB RCPT 15POS CRIMP
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
PCD50M98S0T2X
PCD50M98S0T2X
DSUB 50M STR CONTACT J/S TIN
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
DD26S2S0T0
DD26S2S0T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30/AA
DD26S2S50V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X
DD26S2S50V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V30
DD44S32S0V30
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

BLF188XRGJ
BLF188XRGJ
Ampleon USA Inc.
RF FET LDMOS 135V 24DB SOT1248C
MRF101AN
MRF101AN
NXP USA Inc.
RF TRANSISTOR 100W TO-220
BLF6G27LS-75,112
BLF6G27LS-75,112
NXP USA Inc.
RF TRANSISTOR
BLF8G10LS-300PJ
BLF8G10LS-300PJ
Ampleon USA Inc.
RF FET LDMOS 65V 20.5DB SOT539B
BLF6G21-10G,112
BLF6G21-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BF1212WR,115
BF1212WR,115
NXP USA Inc.
MOSFET N-CH DUAL GATE 6V SOT343R
BF1212R,215
BF1212R,215
NXP USA Inc.
MOSFET N-CH DUAL GATE 6V SOT143R
BF998R,235
BF998R,235
NXP USA Inc.
MOSFET N-CH 12V 30MA SOT143
BLF6G27S-45,118
BLF6G27S-45,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
PD85004
PD85004
STMicroelectronics
FET RF 40V 870MHZ
MRFE6VP8600HSR5
MRFE6VP8600HSR5
NXP USA Inc.
FET RF 2CH 130V 860MHZ NI1230S
BLF6G27LS-40PGJ
BLF6G27LS-40PGJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121E

Related Product By Brand

BLF278C
BLF278C
Rochester Electronics, LLC
BLF278C - DUAL PUSH-PULL N-CHANN
CLF1G0035-100
CLF1G0035-100
Rochester Electronics, LLC
CLF1G0035-100 - 100W BROADBAND R
P87LPC764BDH
P87LPC764BDH
Rochester Electronics, LLC
IC MCU 8BIT
P89LPC938FDH
P89LPC938FDH
Rochester Electronics, LLC
P89LPC938 - 80C51, 8-BIT MICROCO
P80C32SBPN
P80C32SBPN
Rochester Electronics, LLC
IC MCU 8BIT ROMLESS 40DIP
P89LPC932A1FDH
P89LPC932A1FDH
Rochester Electronics, LLC
IC MCU 8BIT 8KB FLASH 28TSSOP
P87C51X2BBD
P87C51X2BBD
Rochester Electronics, LLC
IC MCU 8BIT
P80C32X2FN
P80C32X2FN
Rochester Electronics, LLC
IC MCU 8BIT
MC10116FNR2
MC10116FNR2
Rochester Electronics, LLC
TRIPLE LINE RECEIVER (R2 IS TAPE
CD4049UBMW/B
CD4049UBMW/B
Rochester Electronics, LLC
CD4049UBMW/B
P80C552EFA/08
P80C552EFA/08
Rochester Electronics, LLC
80C552 - 8-BIT MICROCONTROLLER
FM25CL64B-G2
FM25CL64B-G2
Cypress Semiconductor Corp
FRAM MEMORY CIRCUIT, 8KX8, CMOS