BLF245B
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Rochester Electronics, LLC BLF245B

Manufacturer No:
BLF245B
Manufacturer:
Rochester Electronics, LLC
Package:
Bulk
Description:
BLF245B - VHF PUSH-PULL POWER VD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF245B is a dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range. Originally developed by Ampleon, this device has been transferred to Rochester Electronics, LLC. It is encapsulated in a 4-lead, SOT279A balanced flange package with a ceramic cap, providing a common source connection for the transistors through the mounting flange.

Key Specifications

Symbol Parameter Conditions Min Max Unit
f range frequency range 25 175 MHz
P L(1dB) nominal output power at 1 dB gain compression Test signal: CW 30 W
G p power gain P L = 30 W; V DS = 28 V 14 18 dB
η D drain efficiency P L = 30 W; V DS = 28 V; f = 175 MHz; I Dq = 25 mA 55 65 %
P L output power 30 W

Key Features

  • High power gain: Ensures efficient amplification in VHF frequency range applications.
  • Easy power control: Simplifies the management of power levels during operation.
  • Good thermal stability: Maintains performance under varying temperature conditions.
  • Gold metallization: Enhances reliability and durability of the device.

Applications

The BLF245B is primarily used in large signal amplifier applications within the VHF frequency range. This includes various radio frequency (RF) applications such as broadcast, navigation, and safety radio systems.

Q & A

  1. What is the BLF245B transistor used for?

    The BLF245B is used for large signal amplifier applications in the VHF frequency range.

  2. Who is the current manufacturer of the BLF245B?

    The BLF245B is currently managed by Rochester Electronics, LLC, after being transferred from Ampleon.

  3. What is the package type of the BLF245B?

    The BLF245B is encapsulated in a 4-lead, SOT279A balanced flange package with a ceramic cap.

  4. What is the nominal output power of the BLF245B at 1 dB gain compression?

    The nominal output power at 1 dB gain compression is 30 W.

  5. What is the typical power gain of the BLF245B?

    The typical power gain is 18 dB under specified conditions.

  6. What is the drain efficiency of the BLF245B?

    The drain efficiency is typically 65% under specified conditions.

  7. What are the key features of the BLF245B?

    The key features include high power gain, easy power control, good thermal stability, and gold metallization for reliability.

  8. Where can I purchase the BLF245B?

    The BLF245B can be purchased from Rochester Electronics, LLC, and other authorized distributors.

  9. What is the frequency range of the BLF245B?

    The frequency range is from 25 MHz to 175 MHz.

  10. What is the typical output power of the BLF245B?

    The typical output power is 30 W.

Product Attributes

Transistor Type:2 N-Channel (Dual) Common Source
Frequency:175MHz
Gain:18dB
Voltage - Test:28 V
Current Rating (Amps):1mA
Noise Figure:- 
Current - Test:50 mA
Power - Output:30W
Voltage - Rated:65 V
Package / Case:SOT-279A
Supplier Device Package:CDFM4
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