CLF1G0035-100
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Rochester Electronics, LLC CLF1G0035-100

Manufacturer No:
CLF1G0035-100
Manufacturer:
Rochester Electronics, LLC
Package:
Bulk
Description:
CLF1G0035-100 - 100W BROADBAND R
Delivery:
Payment:
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Product Introduction

Overview

The CLF1G0035-100 is a 100 W general purpose broadband RF power GaN HEMT (Gallium Nitride High Electron Mobility Transistor) produced by Ampleon and currently distributed by Rochester Electronics, LLC. This device is designed to operate over a wide frequency range from DC to 3.5 GHz, making it versatile for various RF applications. It features first-generation GaN HEMT technology, known for its high power density and efficiency.

Key Specifications

Symbol Parameter Conditions Min Max Unit
f range frequency range 0 3500 MHz
P L(1dB) nominal output power at 1 dB gain compression 100 W 100 W
V DS drain-source voltage P L = 100 W 50 V
η D drain efficiency P L = 100 W 46 53 %
G p power gain P L = 100 W 7.8 12 dB
RL in input return loss P L = 100 W -5 -2.5 dB
P droop(pulse) pulse droop power P L = 100 W 0.04 dB
t r rise time P L = 100 W 5 ns
t f fall time P L = 100 W 5 ns

Key Features

  • Frequency of operation from DC to 3.5 GHz
  • 100 W general purpose broadband RF Power GaN HEMT
  • Excellent ruggedness (VSWR 10 : 1)
  • High voltage operation (50 V)
  • Thermally enhanced package

Applications

  • Commercial wireless infrastructure (Cellular, Wimax)
  • Radar
  • Broadband general purpose amplifier
  • Public mobile radios
  • Industrial, scientific, medical (ISM) applications
  • Jammers
  • EMC testing
  • Defense applications

Q & A

  1. What is the frequency range of the CLF1G0035-100?

    The frequency range of the CLF1G0035-100 is from DC to 3.5 GHz.

  2. What is the nominal output power of the CLF1G0035-100 at 1 dB gain compression?

    The nominal output power at 1 dB gain compression is 100 W.

  3. What is the drain-source voltage of the CLF1G0035-100?

    The drain-source voltage is 50 V.

  4. What is the typical drain efficiency of the CLF1G0035-100?

    The typical drain efficiency is between 46% and 53%.

  5. What is the power gain of the CLF1G0035-100?

    The power gain is between 7.8 dB and 12 dB.

  6. What are the typical applications of the CLF1G0035-100?

    Typical applications include commercial wireless infrastructure, radar, broadband general purpose amplifiers, public mobile radios, ISM applications, jammers, EMC testing, and defense applications.

  7. What package type is the CLF1G0035-100 available in?

    The CLF1G0035-100 is available in the SOT467C package.

  8. Is the CLF1G0035-100 ROHS compliant?

    Yes, the CLF1G0035-100 is ROHS compliant.

  9. Who is the current distributor of the CLF1G0035-100?

    The current distributor is Rochester Electronics, LLC.

  10. What is the rise and fall time of the CLF1G0035-100?

    The rise and fall time are both 5 ns.

Product Attributes

Transistor Type:HEMT
Frequency:3.5GHz
Gain:12dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:330 mA
Power - Output:100W
Voltage - Rated:150 V
Package / Case:SOT-467C
Supplier Device Package:SOT467C
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