CLF1G0035-100
  • Share:

Rochester Electronics, LLC CLF1G0035-100

Manufacturer No:
CLF1G0035-100
Manufacturer:
Rochester Electronics, LLC
Package:
Bulk
Description:
CLF1G0035-100 - 100W BROADBAND R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CLF1G0035-100 is a 100 W general purpose broadband RF power GaN HEMT (Gallium Nitride High Electron Mobility Transistor) produced by Ampleon and currently distributed by Rochester Electronics, LLC. This device is designed to operate over a wide frequency range from DC to 3.5 GHz, making it versatile for various RF applications. It features first-generation GaN HEMT technology, known for its high power density and efficiency.

Key Specifications

Symbol Parameter Conditions Min Max Unit
f range frequency range 0 3500 MHz
P L(1dB) nominal output power at 1 dB gain compression 100 W 100 W
V DS drain-source voltage P L = 100 W 50 V
η D drain efficiency P L = 100 W 46 53 %
G p power gain P L = 100 W 7.8 12 dB
RL in input return loss P L = 100 W -5 -2.5 dB
P droop(pulse) pulse droop power P L = 100 W 0.04 dB
t r rise time P L = 100 W 5 ns
t f fall time P L = 100 W 5 ns

Key Features

  • Frequency of operation from DC to 3.5 GHz
  • 100 W general purpose broadband RF Power GaN HEMT
  • Excellent ruggedness (VSWR 10 : 1)
  • High voltage operation (50 V)
  • Thermally enhanced package

Applications

  • Commercial wireless infrastructure (Cellular, Wimax)
  • Radar
  • Broadband general purpose amplifier
  • Public mobile radios
  • Industrial, scientific, medical (ISM) applications
  • Jammers
  • EMC testing
  • Defense applications

Q & A

  1. What is the frequency range of the CLF1G0035-100?

    The frequency range of the CLF1G0035-100 is from DC to 3.5 GHz.

  2. What is the nominal output power of the CLF1G0035-100 at 1 dB gain compression?

    The nominal output power at 1 dB gain compression is 100 W.

  3. What is the drain-source voltage of the CLF1G0035-100?

    The drain-source voltage is 50 V.

  4. What is the typical drain efficiency of the CLF1G0035-100?

    The typical drain efficiency is between 46% and 53%.

  5. What is the power gain of the CLF1G0035-100?

    The power gain is between 7.8 dB and 12 dB.

  6. What are the typical applications of the CLF1G0035-100?

    Typical applications include commercial wireless infrastructure, radar, broadband general purpose amplifiers, public mobile radios, ISM applications, jammers, EMC testing, and defense applications.

  7. What package type is the CLF1G0035-100 available in?

    The CLF1G0035-100 is available in the SOT467C package.

  8. Is the CLF1G0035-100 ROHS compliant?

    Yes, the CLF1G0035-100 is ROHS compliant.

  9. Who is the current distributor of the CLF1G0035-100?

    The current distributor is Rochester Electronics, LLC.

  10. What is the rise and fall time of the CLF1G0035-100?

    The rise and fall time are both 5 ns.

Product Attributes

Transistor Type:HEMT
Frequency:3.5GHz
Gain:12dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:330 mA
Power - Output:100W
Voltage - Rated:150 V
Package / Case:SOT-467C
Supplier Device Package:SOT467C
0 Remaining View Similar

In Stock

$226.53
3

Please send RFQ , we will respond immediately.

Same Series
DD15S20JVL0/AA
DD15S20JVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVL0/AA
DD15S20LVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WTS
DD15S20WTS
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20JV3S/AA
DD15S20JV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JT2S
DD15S20JT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HV30/AA
DD26M20HV30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S10HV50/AA
DD26S10HV50/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

MMBF4416A
MMBF4416A
onsemi
JFET N-CH 35V 15MA SOT23
2SK3557-7-TB-E
2SK3557-7-TB-E
onsemi
RF MOSFET N-CH JFET 5V 3CP
MRFE6VP8600HR5
MRFE6VP8600HR5
NXP USA Inc.
FET RF 2CH 130V 860MHZ NI-1230
BF998E6327
BF998E6327
Infineon Technologies
BF998 - RF SMALL SIGNAL TRANSIST
A3I20X050GNR1
A3I20X050GNR1
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
BLF3G21-6,112
BLF3G21-6,112
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BLF6G27-10G,112
BLF6G27-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF6G20LS-110,118
BLF6G20LS-110,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT502B
BLF6G22-45,112
BLF6G22-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
LET9045C
LET9045C
STMicroelectronics
MOSFET N-CH 80V 9A M-250
NE5550279A-T1-A
NE5550279A-T1-A
CEL
FET RF 30V 900MHZ 79A
BF1107,235
BF1107,235
NXP USA Inc.
MOSFET N-CH 3V 10MA SOT23

Related Product By Brand

P87LPC764FDH
P87LPC764FDH
Rochester Electronics, LLC
IC MCU 8BIT
P89LPC931FDH
P89LPC931FDH
Rochester Electronics, LLC
IC MCU 8BIT
P87LPC764BDH
P87LPC764BDH
Rochester Electronics, LLC
IC MCU 8BIT
P87C552SBAA
P87C552SBAA
Rochester Electronics, LLC
P87C552 - 80C51, 8-BIT MICROCONT
PXAS30KBA
PXAS30KBA
Rochester Electronics, LLC
PXAS30KBA - XA 16-BIT MICROCONTR
P80C32SBPN
P80C32SBPN
Rochester Electronics, LLC
IC MCU 8BIT ROMLESS 40DIP
P87C51X2BBD
P87C51X2BBD
Rochester Electronics, LLC
IC MCU 8BIT
TLC32044IN
TLC32044IN
Rochester Electronics, LLC
PCM CODEC, 1-FUNC, CMOS, PDIP28
MC10116FNR2
MC10116FNR2
Rochester Electronics, LLC
TRIPLE LINE RECEIVER (R2 IS TAPE
78M05MFK
78M05MFK
Rochester Electronics, LLC
78M05MFK
TL082ML
TL082ML
Rochester Electronics, LLC
TL082ML
P80C31SBPN
P80C31SBPN
Rochester Electronics, LLC
P80C31 - 80C51 8-BIT MICROCONTRO