CLF1G0035-100
  • Share:

Rochester Electronics, LLC CLF1G0035-100

Manufacturer No:
CLF1G0035-100
Manufacturer:
Rochester Electronics, LLC
Package:
Bulk
Description:
CLF1G0035-100 - 100W BROADBAND R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CLF1G0035-100 is a 100 W general purpose broadband RF power GaN HEMT (Gallium Nitride High Electron Mobility Transistor) produced by Ampleon and currently distributed by Rochester Electronics, LLC. This device is designed to operate over a wide frequency range from DC to 3.5 GHz, making it versatile for various RF applications. It features first-generation GaN HEMT technology, known for its high power density and efficiency.

Key Specifications

Symbol Parameter Conditions Min Max Unit
f range frequency range 0 3500 MHz
P L(1dB) nominal output power at 1 dB gain compression 100 W 100 W
V DS drain-source voltage P L = 100 W 50 V
η D drain efficiency P L = 100 W 46 53 %
G p power gain P L = 100 W 7.8 12 dB
RL in input return loss P L = 100 W -5 -2.5 dB
P droop(pulse) pulse droop power P L = 100 W 0.04 dB
t r rise time P L = 100 W 5 ns
t f fall time P L = 100 W 5 ns

Key Features

  • Frequency of operation from DC to 3.5 GHz
  • 100 W general purpose broadband RF Power GaN HEMT
  • Excellent ruggedness (VSWR 10 : 1)
  • High voltage operation (50 V)
  • Thermally enhanced package

Applications

  • Commercial wireless infrastructure (Cellular, Wimax)
  • Radar
  • Broadband general purpose amplifier
  • Public mobile radios
  • Industrial, scientific, medical (ISM) applications
  • Jammers
  • EMC testing
  • Defense applications

Q & A

  1. What is the frequency range of the CLF1G0035-100?

    The frequency range of the CLF1G0035-100 is from DC to 3.5 GHz.

  2. What is the nominal output power of the CLF1G0035-100 at 1 dB gain compression?

    The nominal output power at 1 dB gain compression is 100 W.

  3. What is the drain-source voltage of the CLF1G0035-100?

    The drain-source voltage is 50 V.

  4. What is the typical drain efficiency of the CLF1G0035-100?

    The typical drain efficiency is between 46% and 53%.

  5. What is the power gain of the CLF1G0035-100?

    The power gain is between 7.8 dB and 12 dB.

  6. What are the typical applications of the CLF1G0035-100?

    Typical applications include commercial wireless infrastructure, radar, broadband general purpose amplifiers, public mobile radios, ISM applications, jammers, EMC testing, and defense applications.

  7. What package type is the CLF1G0035-100 available in?

    The CLF1G0035-100 is available in the SOT467C package.

  8. Is the CLF1G0035-100 ROHS compliant?

    Yes, the CLF1G0035-100 is ROHS compliant.

  9. Who is the current distributor of the CLF1G0035-100?

    The current distributor is Rochester Electronics, LLC.

  10. What is the rise and fall time of the CLF1G0035-100?

    The rise and fall time are both 5 ns.

Product Attributes

Transistor Type:HEMT
Frequency:3.5GHz
Gain:12dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:330 mA
Power - Output:100W
Voltage - Rated:150 V
Package / Case:SOT-467C
Supplier Device Package:SOT467C
0 Remaining View Similar

In Stock

$226.53
3

Please send RFQ , we will respond immediately.

Same Series
DD15S20WT2S/AA
DD15S20WT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V3S
DD15S200V3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HV30/AA
DD26M20HV30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S10HT0/AA
DD26S10HT0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X/AA
DD44S32S00X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W0X
DD26S20W0X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP
CBC17W2S10HT2S/AA
CBC17W2S10HT2S/AA
CONN D-SUB RCPT 17POS CRIMP
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V30
DD44S32S0V30
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

BLF647P,112
BLF647P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121A
MRF300AN
MRF300AN
NXP USA Inc.
RF MOSFET LDMOS 50V TO247
BLF184XRGQ
BLF184XRGQ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
2SK3557-7-TB-E
2SK3557-7-TB-E
onsemi
RF MOSFET N-CH JFET 5V 3CP
CLF1G0035-50
CLF1G0035-50
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
NE5550979A-T1-A
NE5550979A-T1-A
Renesas Electronics America Inc
RF N-CHANNEL POWER MOSFET
AFT27S012NT1
AFT27S012NT1
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
BLF861A,112
BLF861A,112
Ampleon USA Inc.
RF FET LDMOS 65V 14.5DB SOT540A
BLF7G20LS-250P,118
BLF7G20LS-250P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
LET9045C
LET9045C
STMicroelectronics
MOSFET N-CH 80V 9A M-250
BLF6G27LS-40P,118
BLF6G27LS-40P,118
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
MMBFJ309
MMBFJ309
onsemi
RF MOSFET N-CH JFET 10V SOT23-3

Related Product By Brand

ADSP-2101BPZ-100
ADSP-2101BPZ-100
Rochester Electronics, LLC
ADSP-2101 - DIGITAL SIGNAL PROCE
P87LPC768FN
P87LPC768FN
Rochester Electronics, LLC
IC MCU 8BIT 4KB OTP 20DIP
P87LPC764BDH
P87LPC764BDH
Rochester Electronics, LLC
IC MCU 8BIT
P89LPC935FDH
P89LPC935FDH
Rochester Electronics, LLC
IC MCU 8BIT 8KB FLASH 28TSSOP
P87C51X2BBD
P87C51X2BBD
Rochester Electronics, LLC
IC MCU 8BIT
P80C32X2FN
P80C32X2FN
Rochester Electronics, LLC
IC MCU 8BIT
PXAG30KBA
PXAG30KBA
Rochester Electronics, LLC
IC MCU 16BIT
TLC32044IN
TLC32044IN
Rochester Electronics, LLC
PCM CODEC, 1-FUNC, CMOS, PDIP28
AD624BD-G
AD624BD-G
Rochester Electronics, LLC
AD624BD-G
P80C32X2BA
P80C32X2BA
Rochester Electronics, LLC
P80C32 - 80C51 8-BIT MICROCONTRO
P80C31SBAA
P80C31SBAA
Rochester Electronics, LLC
P80C31 - 80C51 8-BIT MICROCONTRO
P80C552EFA/08
P80C552EFA/08
Rochester Electronics, LLC
80C552 - 8-BIT MICROCONTROLLER