BLF6G10LS-200RN,11
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Ampleon USA Inc. BLF6G10LS-200RN,11

Manufacturer No:
BLF6G10LS-200RN,11
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 65V 20DB SOT502B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF6G10LS-200RN,11 is a high-performance RF power LDMOS transistor designed by Ampleon USA Inc. This device is optimized for base station applications, particularly in the frequency range of 700 MHz to 1000 MHz. It is well-suited for RF power amplifiers in GSM, GSM EDGE, W-CDMA, and CDMA systems. The transistor is known for its high output power, efficiency, and ruggedness, making it a reliable choice for multicarrier operations.

Key Specifications

Symbol Parameter Conditions Min Typ/Nom Max Unit
f range Frequency range 700 1000 MHz
P L(3dB) Nominal output power at 3 dB gain compression Test signal: 2-c W-CDMA 200 W
G p Power gain P L(AV) = 40 W; V DS = 28 V 19 20 dB
RL in Input return loss P L(AV) = 40 W; V DS = 28 V; I Dq = 1400 mA -6.4 -4.5 dB
η D Drain efficiency P L(AV) = 40 W; V DS = 28 V; 869 MHz < f < 894 MHz; I Dq = 1400 mA 25 28.5 %
P L(AV) Average output power 40 W
ACPR Adjacent channel power ratio P L(AV) = 40 W; V DS = 28 V; 869 MHz < f < 894 MHz; I Dq = 1400 mA -39.4 -36 dBc
V DS Supply voltage 28 V
I Dq Quiescent drain current 1400 mA
Package SOT502B

Key Features

  • Easy power control
  • Integrated ESD protection
  • Enhanced ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (700 MHz to 1000 MHz)
  • Internally matched for ease of use
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

Applications

  • RF power amplifiers for GSM, GSM EDGE, W-CDMA, and CDMA base stations
  • Multicarrier applications in the 700 MHz to 1000 MHz frequency range

Q & A

  1. Q: What is the frequency range of the BLF6G10LS-200RN,11 transistor?

    A: The frequency range of the BLF6G10LS-200RN,11 transistor is from 700 MHz to 1000 MHz.

  2. Q: What is the nominal output power of the BLF6G10LS-200RN,11 at 3 dB gain compression?

    A: The nominal output power at 3 dB gain compression is 200 W.

  3. Q: What is the power gain of the BLF6G10LS-200RN,11?

    A: The power gain is approximately 20 dB.

  4. Q: What is the drain efficiency of the BLF6G10LS-200RN,11?

    A: The drain efficiency is typically 28.5%.

  5. Q: What is the supply voltage for the BLF6G10LS-200RN,11?

    A: The supply voltage is 28 V.

  6. Q: What is the quiescent drain current of the BLF6G10LS-200RN,11?

    A: The quiescent drain current is 1400 mA.

  7. Q: What package type is used for the BLF6G10LS-200RN,11?

    A: The package type is SOT502B.

  8. Q: Is the BLF6G10LS-200RN,11 compliant with RoHS Directive 2002/95/EC?

    A: Yes, it is compliant with the RoHS Directive 2002/95/EC.

  9. Q: How can I order the BLF6G10LS-200RN,11?

    A: You can order the BLF6G10LS-200RN,11 by selecting the 'Add to Cart' button on the product listing page and proceeding to the checkout.

  10. Q: What is the warranty period for the BLF6G10LS-200RN,11?

    A: The warranty period is typically 1 year, covering defects in materials and workmanship under normal use.

Product Attributes

Transistor Type:LDMOS
Frequency:871.5MHz ~ 891.5MHz
Gain:20dB
Voltage - Test:28 V
Current Rating (Amps):49A
Noise Figure:- 
Current - Test:1.4 A
Power - Output:40W
Voltage - Rated:65 V
Package / Case:SOT-502B
Supplier Device Package:SOT502B
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Same Series
BLF6G10-200RN,112
BLF6G10-200RN,112
RF FET LDMOS 65V 20DB SOT502A

Similar Products

Part Number BLF6G10LS-200RN,11 BLF6G10LS-200RN:11
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Last Time Buy Last Time Buy
Transistor Type LDMOS LDMOS
Frequency 871.5MHz ~ 891.5MHz 871.5MHz ~ 891.5MHz
Gain 20dB 20dB
Voltage - Test 28 V 28 V
Current Rating (Amps) 49A 49A
Noise Figure - -
Current - Test 1.4 A 1.4 A
Power - Output 40W 40W
Voltage - Rated 65 V 65 V
Package / Case SOT-502B SOT-502B
Supplier Device Package SOT502B SOT502B

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