BLF6G10LS-200RN,11
  • Share:

Ampleon USA Inc. BLF6G10LS-200RN,11

Manufacturer No:
BLF6G10LS-200RN,11
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 65V 20DB SOT502B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF6G10LS-200RN,11 is a high-performance RF power LDMOS transistor designed by Ampleon USA Inc. This device is optimized for base station applications, particularly in the frequency range of 700 MHz to 1000 MHz. It is well-suited for RF power amplifiers in GSM, GSM EDGE, W-CDMA, and CDMA systems. The transistor is known for its high output power, efficiency, and ruggedness, making it a reliable choice for multicarrier operations.

Key Specifications

Symbol Parameter Conditions Min Typ/Nom Max Unit
f range Frequency range 700 1000 MHz
P L(3dB) Nominal output power at 3 dB gain compression Test signal: 2-c W-CDMA 200 W
G p Power gain P L(AV) = 40 W; V DS = 28 V 19 20 dB
RL in Input return loss P L(AV) = 40 W; V DS = 28 V; I Dq = 1400 mA -6.4 -4.5 dB
η D Drain efficiency P L(AV) = 40 W; V DS = 28 V; 869 MHz < f < 894 MHz; I Dq = 1400 mA 25 28.5 %
P L(AV) Average output power 40 W
ACPR Adjacent channel power ratio P L(AV) = 40 W; V DS = 28 V; 869 MHz < f < 894 MHz; I Dq = 1400 mA -39.4 -36 dBc
V DS Supply voltage 28 V
I Dq Quiescent drain current 1400 mA
Package SOT502B

Key Features

  • Easy power control
  • Integrated ESD protection
  • Enhanced ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (700 MHz to 1000 MHz)
  • Internally matched for ease of use
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

Applications

  • RF power amplifiers for GSM, GSM EDGE, W-CDMA, and CDMA base stations
  • Multicarrier applications in the 700 MHz to 1000 MHz frequency range

Q & A

  1. Q: What is the frequency range of the BLF6G10LS-200RN,11 transistor?

    A: The frequency range of the BLF6G10LS-200RN,11 transistor is from 700 MHz to 1000 MHz.

  2. Q: What is the nominal output power of the BLF6G10LS-200RN,11 at 3 dB gain compression?

    A: The nominal output power at 3 dB gain compression is 200 W.

  3. Q: What is the power gain of the BLF6G10LS-200RN,11?

    A: The power gain is approximately 20 dB.

  4. Q: What is the drain efficiency of the BLF6G10LS-200RN,11?

    A: The drain efficiency is typically 28.5%.

  5. Q: What is the supply voltage for the BLF6G10LS-200RN,11?

    A: The supply voltage is 28 V.

  6. Q: What is the quiescent drain current of the BLF6G10LS-200RN,11?

    A: The quiescent drain current is 1400 mA.

  7. Q: What package type is used for the BLF6G10LS-200RN,11?

    A: The package type is SOT502B.

  8. Q: Is the BLF6G10LS-200RN,11 compliant with RoHS Directive 2002/95/EC?

    A: Yes, it is compliant with the RoHS Directive 2002/95/EC.

  9. Q: How can I order the BLF6G10LS-200RN,11?

    A: You can order the BLF6G10LS-200RN,11 by selecting the 'Add to Cart' button on the product listing page and proceeding to the checkout.

  10. Q: What is the warranty period for the BLF6G10LS-200RN,11?

    A: The warranty period is typically 1 year, covering defects in materials and workmanship under normal use.

Product Attributes

Transistor Type:LDMOS
Frequency:871.5MHz ~ 891.5MHz
Gain:20dB
Voltage - Test:28 V
Current Rating (Amps):49A
Noise Figure:- 
Current - Test:1.4 A
Power - Output:40W
Voltage - Rated:65 V
Package / Case:SOT-502B
Supplier Device Package:SOT502B
0 Remaining View Similar

In Stock

$88.52
4

Please send RFQ , we will respond immediately.

Same Series
BLF6G10-200RN,112
BLF6G10-200RN,112
RF FET LDMOS 65V 20DB SOT502A

Similar Products

Part Number BLF6G10LS-200RN,11 BLF6G10LS-200RN:11
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Last Time Buy Last Time Buy
Transistor Type LDMOS LDMOS
Frequency 871.5MHz ~ 891.5MHz 871.5MHz ~ 891.5MHz
Gain 20dB 20dB
Voltage - Test 28 V 28 V
Current Rating (Amps) 49A 49A
Noise Figure - -
Current - Test 1.4 A 1.4 A
Power - Output 40W 40W
Voltage - Rated 65 V 65 V
Package / Case SOT-502B SOT-502B
Supplier Device Package SOT502B SOT502B

Related Product By Categories

MRFE6VP100HR5
MRFE6VP100HR5
NXP USA Inc.
RF MOSFET LDMOS 50V NI780-4
BLF6G10LS-200RN:11
BLF6G10LS-200RN:11
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT502B
MRFE6VP5600HR6
MRFE6VP5600HR6
NXP USA Inc.
FET RF 2CH 130V 230MHZ NI1230
PD55003S-E
PD55003S-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
BF998R,235
BF998R,235
NXP USA Inc.
MOSFET N-CH 12V 30MA SOT143
BLF7G15LS-300P,112
BLF7G15LS-300P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF6G27LS-40P,118
BLF6G27LS-40P,118
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
NE5550234-AZ
NE5550234-AZ
CEL
FET RF 30V 900MHZ 3MINIMOLD
AFT05MS003NT1
AFT05MS003NT1
NXP USA Inc.
IC TRANS RF LDMOS
BLF6G27LS-40PHJ
BLF6G27LS-40PHJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB
BLF7G10LS-250
BLF7G10LS-250
Ampleon USA Inc.
RF FET LDMOS 250W SOT502B
BF908R,235
BF908R,235
NXP USA Inc.
MOSFET DUAL GATE 12V 40MA SOT143

Related Product By Brand

BLF642,112
BLF642,112
Ampleon USA Inc.
RF MOSFET LDMOS 32V SOT467C
BLF184XRU
BLF184XRU
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214A
BLL6H0514-25,112
BLL6H0514-25,112
Ampleon USA Inc.
RF FET LDMOS 100V 21DB SOT467C
BLP7G22-10Z
BLP7G22-10Z
Ampleon USA Inc.
RF FET LDMOS 65V 16DB 12VDFN
BLF888DSU
BLF888DSU
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539B
BLF888DU
BLF888DU
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
BLF7G24LS-140,112
BLF7G24LS-140,112
Ampleon USA Inc.
RF MOSFET LDMOS 28V SOT502B
BLF8G20LS-220U
BLF8G20LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 18.9DB SOT502B
BLF3G21-6,135
BLF3G21-6,135
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BLF7G15LS-300P,112
BLF7G15LS-300P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF6G27LS-40P,118
BLF6G27LS-40P,118
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
BLF7G15LS-300P,118
BLF7G15LS-300P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B