Overview
The BLF8G10LS-300PJ is a high-performance RF power transistor manufactured by Ampleon USA Inc. This LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor is designed for base station applications, operating within the frequency range of 700 MHz to 1000 MHz. It is known for its excellent ruggedness, high efficiency, and thermal stability, making it an ideal choice for multi-standard and multi-carrier RF power amplifiers.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Frequency Range | 700 - 1000 | MHz |
| Output Power (PL(3dB)) | 300 | W |
| Power Gain (Gp) | 20.5 | dB |
| Drain Efficiency (ηD) | 32 | % |
| Supply Voltage (VDS) | 28 | V |
| Quiescent Current (IDq) | 2000 | mA |
| Input Return Loss (RL in) | -8 | dB |
| Adjacent Channel Power Ratio (ACPR) | -32 | dBc |
| Package | SOT539B |
Key Features
- Excellent ruggedness and reliability.
- High efficiency, with a typical drain efficiency of 32%.
- Low thermal resistance providing excellent thermal stability.
- Lower output capacitance for improved performance in Doherty applications.
- Designed for low memory effects, providing excellent pre-distortability.
- Internally matched for ease of use.
- Integrated ESD protection.
- Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.
Applications
The BLF8G10LS-300PJ is primarily used in RF power amplifiers for multi-standard and multi-carrier applications within the 700 MHz to 1000 MHz frequency range. It is particularly suited for base station applications due to its high performance and reliability.
Q & A
- What is the frequency range of the BLF8G10LS-300PJ transistor?
The frequency range is from 700 MHz to 1000 MHz. - What is the maximum output power of the BLF8G10LS-300PJ?
The maximum output power is 300 W. - What is the typical drain efficiency of the BLF8G10LS-300PJ?
The typical drain efficiency is 32%. - What is the supply voltage for the BLF8G10LS-300PJ?
The supply voltage is 28 V. - What package type is used for the BLF8G10LS-300PJ?
The package type is SOT539B. - Is the BLF8G10LS-300PJ RoHS compliant?
Yes, it is compliant to the Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC. - What are the key features of the BLF8G10LS-300PJ?
Key features include excellent ruggedness, high efficiency, low thermal resistance, lower output capacitance, and integrated ESD protection. - What applications is the BLF8G10LS-300PJ suited for?
It is suited for RF power amplifiers in base station applications within the 700 MHz to 1000 MHz frequency range. - Is the BLF8G10LS-300PJ internally matched?
Yes, it is internally matched for ease of use. - What is the quiescent current (IDq) of the BLF8G10LS-300PJ?
The quiescent current is 2000 mA.
