Overview
The BLF8G10LS-300PU is a high-power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by Ampleon USA Inc. This device is specifically designed for RF power amplifier applications in the frequency range of 700 MHz to 1000 MHz, making it suitable for base station and wireless infrastructure use.
Despite being discontinued, the BLF8G10LS-300PU remains a significant component in the realm of RF power amplification due to its robust performance and reliability features.
Key Specifications
| Symbol | Parameter | Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|---|
| f range | frequency range | 700 | 1000 | MHz | ||
| P L(3dB) | nominal output power at 3 dB gain compression | Test signal: 2-c W-CDMA | 300 | W | ||
| Gp | power gain | PL(AV) = 65 W; VDS = 28 V | 19.5 | 20.5 | dB | |
| RLin | input return loss | PL(AV) = 65 W; VDS = 28 V; IDq = 2000 mA | -12 | -8 | dB | |
| ηD | drain efficiency | PL(AV) = 65 W; VDS = 28 V; 758 MHz < f < 803 MHz; IDq = 2000 mA | 28 | 32 | % | |
| ACPR | adjacent channel power ratio | PL(AV) = 65 W; VDS = 28 V; 758 MHz < f < 803 MHz; IDq = 2000 mA | -35 | -32 | dBc |
Key Features
- Excellent Ruggedness: The BLF8G10LS-300PU is designed to withstand harsh operating conditions, ensuring reliability in demanding applications.
- High Efficiency: With a drain efficiency of up to 32%, this transistor optimizes power usage and minimizes heat generation.
- Low Rth: The low thermal resistance provides excellent thermal stability, which is crucial for continuous high-power operation.
- Lower Output Capacitance: This feature enhances performance in Doherty amplifier configurations.
- Low Memory Effects: Designed to provide excellent pre-distortability, making it suitable for complex modulation schemes.
- Internally Matched: Simplifies the design process by eliminating the need for external matching components.
- Integrated ESD Protection: Protects the device from electrostatic discharge, enhancing reliability.
- RoHS Compliance: Compliant with the Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC, ensuring environmental safety.
Applications
- RF Power Amplifiers for Base Stations: Ideal for multi-standard and multi-carrier applications in the 700 MHz to 1000 MHz frequency range.
- Wireless Infrastructure: Suitable for various wireless infrastructure applications requiring high-power RF amplification.
Q & A
- What is the frequency range of the BLF8G10LS-300PU?
The BLF8G10LS-300PU operates in the frequency range of 700 MHz to 1000 MHz.
- What is the nominal output power at 3 dB gain compression for this transistor?
The nominal output power at 3 dB gain compression is 300 W.
- What is the typical power gain of the BLF8G10LS-300PU?
The typical power gain is 20.5 dB under specified conditions.
- What is the drain efficiency of this transistor?
The drain efficiency is up to 32% under specified operating conditions.
- Is the BLF8G10LS-300PU internally matched?
Yes, the BLF8G10LS-300PU is internally matched for ease of use.
- Does the BLF8G10LS-300PU have integrated ESD protection?
Yes, it has integrated ESD protection to enhance reliability.
- What is the typical input return loss for this transistor?
The typical input return loss is -8 dB under specified conditions.
- Is the BLF8G10LS-300PU RoHS compliant?
Yes, it is compliant with the Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.
- What are the common applications of the BLF8G10LS-300PU?
Common applications include RF power amplifiers for base stations and wireless infrastructure.
- Why has the BLF8G10LS-300PU been discontinued?
The BLF8G10LS-300PU has been discontinued, but specific reasons are not provided in the available documentation.
