BLF888ESU
  • Share:

Ampleon USA Inc. BLF888ESU

Manufacturer No:
BLF888ESU
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 104V 17DB SOT539B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF888ESU is a high-performance RF MOSFET (LDMOS) integrated circuit manufactured by Ampleon USA Inc. This device is designed for medium to high power RF applications, particularly in the frequency range of 600MHz to 700MHz. Although it is currently discontinued and no longer carried by some major distributors, it remains a significant component in various existing RF systems.

Key Specifications

ParameterValue
Voltage Rating50 V
Current Rating600 mA
Frequency Range600MHz ~ 700MHz
Power Output750W
Gain17dB
Package TypeSOT539B

Key Features

  • High power handling capability of up to 750W.
  • Operates in the frequency range of 600MHz to 700MHz, making it suitable for various RF applications.
  • High gain of 17dB, enhancing signal strength and quality.
  • LDMOS technology for improved linearity and efficiency.
  • SOT539B package for robust and reliable performance.

Applications

The BLF888ESU is primarily used in medium to high power RF applications, including:

  • Broadcast transmitters.
  • Industrial RF heating and plasma generation.
  • Medical equipment such as MRI machines and RF ablation devices.
  • High-power amplifiers in communication systems.

Q & A

  1. What is the voltage rating of the BLF888ESU?
    The voltage rating of the BLF888ESU is 50 V.
  2. What is the current rating of the BLF888ESU?
    The current rating of the BLF888ESU is 600 mA.
  3. In what frequency range does the BLF888ESU operate?
    The BLF888ESU operates in the frequency range of 600MHz to 700MHz.
  4. What is the power output of the BLF888ESU?
    The power output of the BLF888ESU is up to 750W.
  5. What is the gain of the BLF888ESU?
    The gain of the BLF888ESU is 17dB.
  6. What package type does the BLF888ESU use?
    The BLF888ESU uses the SOT539B package type.
  7. Is the BLF888ESU still available for purchase?
    The BLF888ESU is currently discontinued and no longer carried by some major distributors, but it may still be available from certain suppliers or as a substitute.
  8. What technology does the BLF888ESU use?
    The BLF888ESU uses LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology.
  9. What are some common applications of the BLF888ESU?
    The BLF888ESU is used in broadcast transmitters, industrial RF heating, medical equipment, and high-power amplifiers in communication systems.
  10. Why is the BLF888ESU significant despite being discontinued?
    The BLF888ESU remains significant due to its high-performance capabilities and its continued use in existing RF systems.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:600MHz ~ 700MHz
Gain:17dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:600 mA
Power - Output:750W
Voltage - Rated:104 V
Package / Case:SOT-539B
Supplier Device Package:SOT539B
0 Remaining View Similar

In Stock

$290.11
2

Please send RFQ , we will respond immediately.

Same Series
BLF888EU
BLF888EU
RF FET LDMOS 104V 17DB SOT539A

Similar Products

Part Number BLF888ESU BLF888EU BLF888DSU
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Active Active Not For New Designs
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS
Frequency 600MHz ~ 700MHz 600MHz ~ 700MHz 860MHz
Gain 17dB 17dB 21dB
Voltage - Test 50 V 50 V 50 V
Current Rating (Amps) - - -
Noise Figure - - -
Current - Test 600 mA 600 mA 1.3 A
Power - Output 750W 750W 250W
Voltage - Rated 104 V 104 V 104 V
Package / Case SOT-539B SOT-539A SOT-539B
Supplier Device Package SOT539B SOT539A SOT539B

Related Product By Categories

BLF647P,112
BLF647P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121A
MMBF4416A
MMBF4416A
onsemi
JFET N-CH 35V 15MA SOT23
CGHV96100F2
CGHV96100F2
Wolfspeed, Inc.
RF MOSFET HEMT 40V 440210
BLF245B
BLF245B
Rochester Electronics, LLC
BLF245B - VHF PUSH-PULL POWER VD
BLF6G10LS-135R,112
BLF6G10LS-135R,112
NXP USA Inc.
RF TRANSISTOR
BLF647PSJ
BLF647PSJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
A2I20H060NR1
A2I20H060NR1
NXP USA Inc.
IC TRANS RF LDMOS
A2V07H525-04NR6
A2V07H525-04NR6
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
BF1211WR,115
BF1211WR,115
NXP USA Inc.
MOSFET N-CH DUAL GATE 6V SOT343R
BLF6G27-10G,118
BLF6G27-10G,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF6G20LS-110,118
BLF6G20LS-110,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT502B
BLF7G27LS-140,118
BLF7G27LS-140,118
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT502B

Related Product By Brand

BLF3G21-30
BLF3G21-30
Ampleon USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
LYE16350XH
LYE16350XH
Ampleon USA Inc.
LYE16350XH - RF POWER TRANSISTOR
BLF183XRU
BLF183XRU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121A
BLF647P,112
BLF647P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121A
BLF578,112
BLF578,112
Ampleon USA Inc.
RF FET LDMOS 110V 24DB SOT539A
CLF1G0035-100PU
CLF1G0035-100PU
Ampleon USA Inc.
RF MOSFET HEMT 50V LDMOST
CLF1G0035-100H
CLF1G0035-100H
Ampleon USA Inc.
CLF1G0035-100 - 100W BROADBAND R
BLF7G22LS-130,118
BLF7G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF6G20S-45,118
BLF6G20S-45,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
BLF7G21LS-160P,112
BLF7G21LS-160P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121B
BLF6G10LS-200RN
BLF6G10LS-200RN
Ampleon USA Inc.
RF FET LDMOS 65V SOT539
BLM6G22-30G,135
BLM6G22-30G,135
Ampleon USA Inc.
IC AMP W-CDMA 2.11-2.17GHZ 16HSO