BLF6G20-180PN,112
  • Share:

Ampleon USA Inc. BLF6G20-180PN,112

Manufacturer No:
BLF6G20-180PN,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 65V 18DB SOT539A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF6G20-180PN,112 is a high-power RF transistor designed and manufactured by Ampleon USA Inc. This device is specifically tailored for base station applications, operating within the frequency range of 1.8 to 1.88 GHz. It is part of Ampleon's portfolio of LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistors, known for their high efficiency and reliability in RF power amplification.

Key Specifications

Specification Value
Part Number BLF6G20-180PN,112
Manufacturer Ampleon USA Inc.
Transistor Type LDMOS (Laterally Diffused Metal Oxide Semiconductor)
Frequency Range 1.8 to 1.88 GHz
Output Power 180 W
Gain 18 dB
Voltage Rating 32 V
Package Type SOT-539A
Integrated ESD Protection Yes

Key Features

  • High Output Power: The BLF6G20-180PN,112 offers an output power of 180 W, making it suitable for high-power RF applications.
  • High Gain: With a gain of 18 dB, this transistor ensures efficient amplification of RF signals.
  • Wide Frequency Range: Operates within the frequency range of 1.8 to 1.88 GHz, making it ideal for various base station applications.
  • Integrated ESD Protection: Features built-in ESD (Electrostatic Discharge) protection to enhance device reliability and longevity.
  • Easy Power Control: Designed for easy power control, which simplifies the design and operation of RF power amplifiers.

Applications

The BLF6G20-180PN,112 is primarily used in base station applications for mobile broadband networks. Its high power output and efficiency make it an excellent choice for:

  • Base stations for cellular networks (e.g., GSM, CDMA, LTE)
  • RF power amplifiers in wireless communication systems
  • High-power RF transmission systems

Q & A

  1. What is the part number of this RF transistor?

    The part number is BLF6G20-180PN,112.

  2. Who is the manufacturer of this component?

    The manufacturer is Ampleon USA Inc.

  3. What is the frequency range of the BLF6G20-180PN,112?

    The frequency range is from 1.8 to 1.88 GHz.

  4. What is the output power of this transistor?

    The output power is 180 W.

  5. What is the gain of the BLF6G20-180PN,112?

    The gain is 18 dB.

  6. What type of transistor is the BLF6G20-180PN,112?

    It is an LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor.

  7. Does the BLF6G20-180PN,112 have integrated ESD protection?

    Yes, it has integrated ESD protection.

  8. What is the package type of this component?

    The package type is SOT-539A.

  9. What are the primary applications of the BLF6G20-180PN,112?

    The primary applications include base stations for cellular networks and high-power RF transmission systems.

  10. Why is the BLF6G20-180PN,112 suitable for base station applications?

    It is suitable due to its high output power, high gain, and ease of power control.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:1.8GHz ~ 1.88GHz
Gain:18dB
Voltage - Test:32 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:1.6 A
Power - Output:50W
Voltage - Rated:65 V
Package / Case:SOT-539A
Supplier Device Package:SOT539A
0 Remaining View Similar

In Stock

-
545

Please send RFQ , we will respond immediately.

Similar Products

Part Number BLF6G20-180PN,112 BLF6G22-180PN,112 BLF6G20-180RN,112 BLF6G24-180PN,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS LDMOS
Frequency 1.8GHz ~ 1.88GHz 2.11GHz ~ 2.17GHz 1.93GHz ~ 1.99GHz 2GHz ~ 2.2GHz
Gain 18dB 17.5dB 17.2dB 17.5dB
Voltage - Test 32 V 32 V 30 V -
Current Rating (Amps) - - 49A -
Noise Figure - - - -
Current - Test 1.6 A 1.6 A 1.4 A -
Power - Output 50W 50W 40W 50W
Voltage - Rated 65 V 65 V 65 V -
Package / Case SOT-539A SOT-539A SOT-502A SOT539A
Supplier Device Package SOT539A SOT539A SOT502A SOT539A

Related Product By Categories

MRF6V12500HR5
MRF6V12500HR5
NXP USA Inc.
FET RF 110V 1.03GHZ NI-780H
NTD3055AVT4
NTD3055AVT4
onsemi
NFET DPAK 60V 0.15R TR
AFT09S282NR3 REEL
AFT09S282NR3 REEL
Freescale Semiconductor
AFT09S282NR3 REEL
PD55025S-E
PD55025S-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
BLF888DU
BLF888DU
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
BLF7G27LS-150P,118
BLF7G27LS-150P,118
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT539B
BLF888AS,112
BLF888AS,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539B
BF1212R,215
BF1212R,215
NXP USA Inc.
MOSFET N-CH DUAL GATE 6V SOT143R
BF998R,215
BF998R,215
NXP USA Inc.
MOSFET N-CH 12V 30MA SOT143R
BLF6G38LS-50,118
BLF6G38LS-50,118
Ampleon USA Inc.
RF FET LDMOS 65V 14DB SOT502B
BLF6G27LS-40PGJ
BLF6G27LS-40PGJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121E
BLF6G27-10GHJ
BLF6G27-10GHJ
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C

Related Product By Brand

BLF647PS,112
BLF647PS,112
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
BLP7G22-10Z
BLP7G22-10Z
Ampleon USA Inc.
RF FET LDMOS 65V 16DB 12VDFN
CLF1G0035-100PU
CLF1G0035-100PU
Ampleon USA Inc.
RF MOSFET HEMT 50V LDMOST
BLF881,112
BLF881,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT467C
BLF884PS,112
BLF884PS,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT1121B
BLF647PSJ
BLF647PSJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
BLF888ESU
BLF888ESU
Ampleon USA Inc.
RF FET LDMOS 104V 17DB SOT539B
BLF6G27S-45,135
BLF6G27S-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF6G20S-45,118
BLF6G20S-45,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
BLF7G21LS-160P,118
BLF7G21LS-160P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121B
BLF7G24LS-140
BLF7G24LS-140
Ampleon USA Inc.
RF FET LDMOS 140W SOT502B
BLF7G20LS-90PH
BLF7G20LS-90PH
Ampleon USA Inc.
RF FET LDMOS 90W CDFM4