Overview
The BLF6G20-180PN,112 is a high-power RF transistor designed and manufactured by Ampleon USA Inc. This device is specifically tailored for base station applications, operating within the frequency range of 1.8 to 1.88 GHz. It is part of Ampleon's portfolio of LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistors, known for their high efficiency and reliability in RF power amplification.
Key Specifications
Specification | Value |
---|---|
Part Number | BLF6G20-180PN,112 |
Manufacturer | Ampleon USA Inc. |
Transistor Type | LDMOS (Laterally Diffused Metal Oxide Semiconductor) |
Frequency Range | 1.8 to 1.88 GHz |
Output Power | 180 W |
Gain | 18 dB |
Voltage Rating | 32 V |
Package Type | SOT-539A |
Integrated ESD Protection | Yes |
Key Features
- High Output Power: The BLF6G20-180PN,112 offers an output power of 180 W, making it suitable for high-power RF applications.
- High Gain: With a gain of 18 dB, this transistor ensures efficient amplification of RF signals.
- Wide Frequency Range: Operates within the frequency range of 1.8 to 1.88 GHz, making it ideal for various base station applications.
- Integrated ESD Protection: Features built-in ESD (Electrostatic Discharge) protection to enhance device reliability and longevity.
- Easy Power Control: Designed for easy power control, which simplifies the design and operation of RF power amplifiers.
Applications
The BLF6G20-180PN,112 is primarily used in base station applications for mobile broadband networks. Its high power output and efficiency make it an excellent choice for:
- Base stations for cellular networks (e.g., GSM, CDMA, LTE)
- RF power amplifiers in wireless communication systems
- High-power RF transmission systems
Q & A
- What is the part number of this RF transistor?
The part number is BLF6G20-180PN,112.
- Who is the manufacturer of this component?
The manufacturer is Ampleon USA Inc.
- What is the frequency range of the BLF6G20-180PN,112?
The frequency range is from 1.8 to 1.88 GHz.
- What is the output power of this transistor?
The output power is 180 W.
- What is the gain of the BLF6G20-180PN,112?
The gain is 18 dB.
- What type of transistor is the BLF6G20-180PN,112?
It is an LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor.
- Does the BLF6G20-180PN,112 have integrated ESD protection?
Yes, it has integrated ESD protection.
- What is the package type of this component?
The package type is SOT-539A.
- What are the primary applications of the BLF6G20-180PN,112?
The primary applications include base stations for cellular networks and high-power RF transmission systems.
- Why is the BLF6G20-180PN,112 suitable for base station applications?
It is suitable due to its high output power, high gain, and ease of power control.