BLF7G27LS-150P,118
  • Share:

Ampleon USA Inc. BLF7G27LS-150P,118

Manufacturer No:
BLF7G27LS-150P,118
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 65V 16DB SOT539B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF7G27LS-150P,118 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed and manufactured by Ampleon USA Inc. This component is specifically tailored for RF power amplifier applications in the frequency range of 2500 MHz to 2700 MHz, making it ideal for base station and multicarrier applications. Although this product has been discontinued, it remains notable for its advanced features and performance characteristics.

Key Specifications

Symbol Parameter Conditions Min Max Unit
f range frequency range - 2500 2700 - MHz
P L(3dB) nominal output power at 3 dB gain compression - - 150 - W
G p power gain V DS = 28 V 14.8 16.5 - dB
RL in input return loss V DS = 28 V; I Dq = 1200 mA -10 - - dB
η D drain efficiency V DS = 28 V; 2500 MHz ≤ f ≤ 2700 MHz; I Dq = 1200 mA 22 26 - %
P L(AV) average output power - - 30 - W
ACPR 885k adjacent channel power ratio (885 kHz) P L(AV) = 30 W; V DS = 28 V; 2500 MHz ≤ f ≤ 2700 MHz; I Dq = 1200 mA -43 -47 - dBc

Key Features

  • Excellent Ruggedness: Designed to withstand harsh operating conditions.
  • High Efficiency: Offers high drain efficiency, contributing to reduced power consumption and heat generation.
  • Low Thermal Resistance: Provides excellent thermal stability, ensuring reliable operation over a wide range of temperatures.
  • Broadband Operation: Optimized for frequencies between 2500 MHz and 2700 MHz.
  • Lower Output Capacitance: Improves performance in Doherty applications.
  • Low Memory Effects: Enhances pre-distortability, making it suitable for linear amplification.
  • Design Optimized for Gull-Wing and Straight Lead Versions: Flexible design to accommodate different mounting requirements.
  • Internally Matched: Simplifies the design and implementation process.
  • Integrated ESD Protection: Protects the device from electrostatic discharge damage.
  • RoHS Compliant: Meets the Directive 2002/95/EC regarding the Restriction of Hazardous Substances.

Applications

  • RF Power Amplifiers for Base Stations: Ideal for use in cellular base stations and other wireless infrastructure.
  • Multicarrier Applications: Suitable for applications requiring simultaneous transmission of multiple carriers within the 2500 MHz to 2700 MHz frequency range.

Q & A

  1. What is the frequency range of the BLF7G27LS-150P,118?

    The BLF7G27LS-150P,118 operates within the frequency range of 2500 MHz to 2700 MHz.

  2. What is the nominal output power at 3 dB gain compression for this transistor?

    The nominal output power at 3 dB gain compression is 150 W.

  3. What is the typical drain efficiency of the BLF7G27LS-150P,118?

    The typical drain efficiency is between 22% and 26%.

  4. Is the BLF7G27LS-150P,118 internally matched?

    Yes, the BLF7G27LS-150P,118 is internally matched for ease of use.

  5. Does the BLF7G27LS-150P,118 have integrated ESD protection?

    Yes, it has integrated ESD protection.

  6. What are the primary applications of the BLF7G27LS-150P,118?

    The primary applications include RF power amplifiers for base stations and multicarrier applications within the 2500 MHz to 2700 MHz frequency range.

  7. Is the BLF7G27LS-150P,118 RoHS compliant?

    Yes, it is compliant with the Directive 2002/95/EC regarding the Restriction of Hazardous Substances (RoHS).

  8. What is the package type for the BLF7G27LS-150P,118?

    The package type is SOT539B.

  9. Why has the BLF7G27LS-150P,118 been discontinued?

    The product has been discontinued, but specific reasons are not provided in the available documentation.

  10. Where can I find detailed technical information about the BLF7G27LS-150P,118?

    Detailed technical information can be found in the datasheet and other documentation available on the Ampleon website or through authorized distributors.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:2.5GHz ~ 2.7GHz
Gain:16.5dB
Voltage - Test:28 V
Current Rating (Amps):37A
Noise Figure:- 
Current - Test:1.2 A
Power - Output:30W
Voltage - Rated:65 V
Package / Case:SOT-539B
Supplier Device Package:SOT539B
0 Remaining View Similar

In Stock

$121.16
9

Please send RFQ , we will respond immediately.

Same Series
BLF7G27L-150P,112
BLF7G27L-150P,112
RF TRANSISTOR
BLF7G27L-150P,118
BLF7G27L-150P,118
RF FET LDMOS 65V 16DB SOT539A
BLF7G27LS-150P,112
BLF7G27LS-150P,112
RF FET LDMOS 65V 16DB SOT539B

Similar Products

Part Number BLF7G27LS-150P,118 BLF7G27L-150P,118 BLF7G27LS-150P,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Last Time Buy Obsolete Obsolete
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 2.5GHz ~ 2.7GHz 2.5GHz ~ 2.7GHz 2.5GHz ~ 2.7GHz
Gain 16.5dB 16.5dB 16.5dB
Voltage - Test 28 V 28 V 28 V
Current Rating (Amps) 37A 37A 37A
Noise Figure - - -
Current - Test 1.2 A 1.2 A 1.2 A
Power - Output 30W 30W 30W
Voltage - Rated 65 V 65 V 65 V
Package / Case SOT-539B SOT-539A SOT-539B
Supplier Device Package SOT539B SOT539A SOT539B

Related Product By Categories

BLF888A,112
BLF888A,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539A
CGH40010F
CGH40010F
Wolfspeed, Inc.
RF MOSFET HEMT 28V 440166
AFT27S006NT1
AFT27S006NT1
NXP USA Inc.
RF MOSFET LDMOS 28V PLD1.5W
BLF7G10LS-250,118
BLF7G10LS-250,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.5DB SOT502B
BLF6G10LS-135R,112
BLF6G10LS-135R,112
NXP USA Inc.
RF TRANSISTOR
NE5550779A-T1-A
NE5550779A-T1-A
Renesas Electronics America Inc
RF POWER N-CHANNEL, MOSFET
PD55015S-E
PD55015S-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BLF8G22LS-140J
BLF8G22LS-140J
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF8G22LS-220U
BLF8G22LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
A2T09D400-23NR6
A2T09D400-23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
BF909AR,215
BF909AR,215
NXP USA Inc.
MOSFET N-CH SOT-143R
BLF6G27-10G,118
BLF6G27-10G,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C

Related Product By Brand

LYE16350XH
LYE16350XH
Ampleon USA Inc.
LYE16350XH - RF POWER TRANSISTOR
BLF647PS,112
BLF647PS,112
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
BLF888DU
BLF888DU
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
BLF8G20LS-220J
BLF8G20LS-220J
Ampleon USA Inc.
RF FET LDMOS 65V 18.9DB SOT502B
BLF7G22LS-130,112
BLF7G22LS-130,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF278,112
BLF278,112
Ampleon USA Inc.
RF FET 2 NC 125V 22DB SOT262A1
BLF6G20LS-110,118
BLF6G20LS-110,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT502B
BLF6G22LS-130,118
BLF6G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BLF6G22LS-130,112
BLF6G22LS-130,112
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BLF6G27LS-75,118
BLF6G27LS-75,118
Ampleon USA Inc.
RF FET LDMOS 65V SOT502B
BLF7G20LS-250P,118
BLF7G20LS-250P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF7G27LS-140,118
BLF7G27LS-140,118
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT502B