BLP7G22-10Z
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Ampleon USA Inc. BLP7G22-10Z

Manufacturer No:
BLP7G22-10Z
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 65V 16DB 12VDFN
Delivery:
Payment:
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Product Introduction

Overview

The BLP7G22-10Z is a 10W plastic LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for base station applications. This transistor operates within the frequency range of 700 MHz to 2700 MHz, making it suitable for various wireless communication standards. Although the product has been discontinued, it remains relevant for understanding LDMOS technology and its applications in RF power amplifiers.

Key Specifications

SymbolParameterConditionsMinTyp/NomMaxUnit
f rangefrequency range7002700MHz
P L(1dB)nominal output power at 1 dB gain compressionTest signal: 2-c W-CDMA10W
G ppower gainP L(AV) = 2 W; V DS = 28 V17.4dB
η Ddrain efficiencyP L(AV) = 2 W; V DS = 28 V; I Dq = 110 mA25%
ACPR 5Madjacent channel power ratio 5 MHzP L(AV) = 2 W; V DS = 28 V; f = 2140 MHz; I Dq = 110 mA-40dBc

Key Features

  • High efficiency
  • Excellent ruggedness
  • Designed for broadband operation
  • Excellent thermal stability
  • High power gain
  • Integrated ESD protection
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • CDMA
  • W-CDMA
  • GSM EDGE
  • MC-GSM
  • LTE
  • WiMAX

Q & A

  1. What is the BLP7G22-10Z transistor used for? The BLP7G22-10Z is used for base station applications in wireless communication systems.
  2. What is the frequency range of the BLP7G22-10Z? The frequency range is from 700 MHz to 2700 MHz.
  3. What is the nominal output power of the BLP7G22-10Z at 1 dB gain compression? The nominal output power is 10 W.
  4. What are the key features of the BLP7G22-10Z? Key features include high efficiency, excellent ruggedness, broadband operation, excellent thermal stability, high power gain, and integrated ESD protection.
  5. Is the BLP7G22-10Z compliant with RoHS? Yes, it is compliant with Directive 2002/95/EC regarding Restriction of Hazardous Substances (RoHS).
  6. What are the typical applications of the BLP7G22-10Z? Typical applications include CDMA, W-CDMA, GSM EDGE, MC-GSM, LTE, and WiMAX.
  7. What is the power gain of the BLP7G22-10Z? The power gain is 17.4 dB under specified conditions.
  8. What is the drain efficiency of the BLP7G22-10Z? The drain efficiency is 25% under specified conditions.
  9. Is the BLP7G22-10Z still in production? No, the BLP7G22-10Z has been discontinued.
  10. Where can I find more detailed specifications and documentation for the BLP7G22-10Z? Detailed specifications and documentation can be found on Ampleon’s official website and other electronic component distributors.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:2.14GHz
Gain:16dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:110 mA
Power - Output:2W
Voltage - Rated:65 V
Package / Case:12-VDFN Exposed Pad
Supplier Device Package:12-HVSON (6x4)
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BLP7G22-10Z
BLP7G22-10Z
RF FET LDMOS 65V 16DB 12VDFN

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