BLP7G22-10Z
  • Share:

Ampleon USA Inc. BLP7G22-10Z

Manufacturer No:
BLP7G22-10Z
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 65V 16DB 12VDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLP7G22-10Z is a 10W plastic LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for base station applications. This transistor operates within the frequency range of 700 MHz to 2700 MHz, making it suitable for various wireless communication standards. Although the product has been discontinued, it remains relevant for understanding LDMOS technology and its applications in RF power amplifiers.

Key Specifications

SymbolParameterConditionsMinTyp/NomMaxUnit
f rangefrequency range7002700MHz
P L(1dB)nominal output power at 1 dB gain compressionTest signal: 2-c W-CDMA10W
G ppower gainP L(AV) = 2 W; V DS = 28 V17.4dB
η Ddrain efficiencyP L(AV) = 2 W; V DS = 28 V; I Dq = 110 mA25%
ACPR 5Madjacent channel power ratio 5 MHzP L(AV) = 2 W; V DS = 28 V; f = 2140 MHz; I Dq = 110 mA-40dBc

Key Features

  • High efficiency
  • Excellent ruggedness
  • Designed for broadband operation
  • Excellent thermal stability
  • High power gain
  • Integrated ESD protection
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • CDMA
  • W-CDMA
  • GSM EDGE
  • MC-GSM
  • LTE
  • WiMAX

Q & A

  1. What is the BLP7G22-10Z transistor used for? The BLP7G22-10Z is used for base station applications in wireless communication systems.
  2. What is the frequency range of the BLP7G22-10Z? The frequency range is from 700 MHz to 2700 MHz.
  3. What is the nominal output power of the BLP7G22-10Z at 1 dB gain compression? The nominal output power is 10 W.
  4. What are the key features of the BLP7G22-10Z? Key features include high efficiency, excellent ruggedness, broadband operation, excellent thermal stability, high power gain, and integrated ESD protection.
  5. Is the BLP7G22-10Z compliant with RoHS? Yes, it is compliant with Directive 2002/95/EC regarding Restriction of Hazardous Substances (RoHS).
  6. What are the typical applications of the BLP7G22-10Z? Typical applications include CDMA, W-CDMA, GSM EDGE, MC-GSM, LTE, and WiMAX.
  7. What is the power gain of the BLP7G22-10Z? The power gain is 17.4 dB under specified conditions.
  8. What is the drain efficiency of the BLP7G22-10Z? The drain efficiency is 25% under specified conditions.
  9. Is the BLP7G22-10Z still in production? No, the BLP7G22-10Z has been discontinued.
  10. Where can I find more detailed specifications and documentation for the BLP7G22-10Z? Detailed specifications and documentation can be found on Ampleon’s official website and other electronic component distributors.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:2.14GHz
Gain:16dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:110 mA
Power - Output:2W
Voltage - Rated:65 V
Package / Case:12-VDFN Exposed Pad
Supplier Device Package:12-HVSON (6x4)
0 Remaining View Similar

In Stock

$13.57
37

Please send RFQ , we will respond immediately.

Same Series
BLP7G22-10,135
BLP7G22-10,135
TRANSISTOR DRIVER LDMOS 12HVSON

Related Product By Categories

MW6S004NT1
MW6S004NT1
NXP USA Inc.
FET RF 68V 1.96GHZ PLD-1.5
BLF6G27LS-75,112
BLF6G27LS-75,112
NXP USA Inc.
RF TRANSISTOR
CLF1G0035-100P
CLF1G0035-100P
NXP USA Inc.
RF SMALL SIGNAL FIELD-EFFECT TRA
BLF7G20LS-200,118
BLF7G20LS-200,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF404
BLF404
Rochester Electronics, LLC
BLF404 - UHF POWER VDMOS TRANSIS
MRF300BN
MRF300BN
NXP USA Inc.
RF MOSFET LDMOS 50V TO247
BLF6G10LS-135RN,11
BLF6G10LS-135RN,11
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BLF878,112
BLF878,112
Ampleon USA Inc.
RF FET LDMOS 89V 21DB SOT979A
BLF278,112
BLF278,112
Ampleon USA Inc.
RF FET 2 NC 125V 22DB SOT262A1
PD57006S
PD57006S
STMicroelectronics
FET RF 65V 945MHZ PWRSO-10
LET9045C
LET9045C
STMicroelectronics
MOSFET N-CH 80V 9A M-250
BLF8G22LS-160BVX
BLF8G22LS-160BVX
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1244B

Related Product By Brand

BLF888A,112
BLF888A,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539A
BLF8G10LS-300PU
BLF8G10LS-300PU
Ampleon USA Inc.
RF FET LDMOS 65V 20.5DB SOT539B
BLF871S,112
BLF871S,112
Ampleon USA Inc.
RF FET LDMOS 89V 19DB SOT467B
CLF1G0035-100PU
CLF1G0035-100PU
Ampleon USA Inc.
RF MOSFET HEMT 50V LDMOST
BLF647PSJ
BLF647PSJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
CLF1G0035-100H
CLF1G0035-100H
Ampleon USA Inc.
CLF1G0035-100 - 100W BROADBAND R
BLF245B,112
BLF245B,112
Ampleon USA Inc.
RF FET 2 NC 65V 18DB SOT279A
BLF2043F,112
BLF2043F,112
Ampleon USA Inc.
RF FET LDMOS 65V 11DB SOT467C
BLF7G22LS-200,118
BLF7G22LS-200,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF6G22LS-40P,112
BLF6G22LS-40P,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT1121B
BLF6G10S-45K,112
BLF6G10S-45K,112
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B
BLF7G24LS-140
BLF7G24LS-140
Ampleon USA Inc.
RF FET LDMOS 140W SOT502B