Overview
The BLF7G10LS-250,118 is a high-power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor designed and manufactured by Ampleon USA Inc. This transistor is specifically tailored for high-power amplifier applications, particularly in the frequency range of 920 MHz to 960 MHz. It is well-suited for base station applications, including W-CDMA and multi-carrier systems. The device has been transferred from Ampleon to Flip Electronics but is still widely available through various distributors.
Key Specifications
| Symbol | Parameter | Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|---|
| f range | Frequency range | - | 920 | - | 960 | MHz |
| P L(3dB) | Nominal output power at 3 dB gain compression | Test signal: 2-c W-CDMA | - | 250 | - | W |
| G p | Power gain | P L(AV) = 60 W; V DS = 30 V | 18.5 | 19.5 | - | dB |
| RL in | Input return loss | P L(AV) = 60 W; V DS = 30 V; I Dq = 1800 mA | -15.5 | -10 | - | dB |
| η D | Drain efficiency | P L(AV) = 60 W; V DS = 30 V; 920 MHz ≤ f ≤ 960 MHz; I Dq = 1800 mA | 27 | 30.5 | - | % |
| P L(AV) | Average output power | - | - | 60 | - | W |
| ACPR | Adjacent channel power ratio | P L(AV) = 60 W; V DS = 30 V; 920 MHz ≤ f ≤ 960 MHz; I Dq = 1800 mA | -34 | -31 | - | dBc |
Key Features
- Excellent Ruggedness: The BLF7G10LS-250,118 is designed to withstand harsh operating conditions.
- High Efficiency: Achieves high efficiency, particularly with a drain efficiency of up to 30.5%.
- Low Thermal Resistance: Provides excellent thermal stability due to its low thermal resistance.
- Broadband Operation: Designed for broadband operation in the frequency range of 869 MHz to 960 MHz.
- Lower Output Capacitance: Optimized for improved performance in Doherty applications.
- Low Memory Effects: Designed to provide excellent pre-distortability with low memory effects.
- Internally Matched: Both input and output are internally matched for ease of use.
- Integrated ESD Protection: Includes integrated ESD protection for enhanced reliability.
- RoHS Compliance: Compliant with Directive 2002/95/EC regarding the Restriction of Hazardous Substances (RoHS).
Applications
The BLF7G10LS-250,118 is primarily used in RF power amplifiers for base stations and multi-carrier applications within the 869 MHz to 960 MHz frequency range. It is particularly suited for W-CDMA base stations and other wireless infrastructure applications.
Q & A
- What is the frequency range of the BLF7G10LS-250,118?
The BLF7G10LS-250,118 operates in the frequency range of 920 MHz to 960 MHz. - What is the nominal output power of the BLF7G10LS-250,118 at 3 dB gain compression?
The nominal output power is 250 W. - What is the typical drain efficiency of the BLF7G10LS-250,118?
The typical drain efficiency is 30.5%. - What are the key features of the BLF7G10LS-250,118?
Key features include excellent ruggedness, high efficiency, low thermal resistance, and internally matched input and output. - Is the BLF7G10LS-250,118 RoHS compliant?
Yes, it is compliant with Directive 2002/95/EC regarding the Restriction of Hazardous Substances (RoHS). - What are the typical applications of the BLF7G10LS-250,118?
Typical applications include RF power amplifiers for W-CDMA base stations and multi-carrier systems. - What is the package type of the BLF7G10LS-250,118?
The package type is SOT502B. - Does the BLF7G10LS-250,118 have integrated ESD protection?
Yes, it includes integrated ESD protection. - What is the average output power of the BLF7G10LS-250,118?
The average output power is 60 W. - What is the supply voltage for the BLF7G10LS-250,118?
The supply voltage is 30 V. - Who is the current distributor of the BLF7G10LS-250,118?
The device has been transferred from Ampleon to Flip Electronics.
