BLS6G3135S-120,112
  • Share:

Ampleon USA Inc. BLS6G3135S-120,112

Manufacturer No:
BLS6G3135S-120,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 60V 11DB SOT502B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLS6G3135S-120,112 is a high-power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by Ampleon USA Inc. This device is specifically designed for pulsed radar applications, operating within the frequency range of 3.1 GHz to 3.5 GHz. It is known for its robust performance and reliability, making it a preferred choice in various radar systems.

Key Specifications

ParameterValue
Frequency Range3.1 GHz to 3.5 GHz
Output Power120 W
Supply Voltage32 V
IDq (Quiescent Current)100 mA
Package TypeAIR cavity package

Key Features

  • High output power of 120 W, suitable for demanding radar applications.
  • Operates in the frequency range of 3.1 GHz to 3.5 GHz.
  • Easy power control due to its linear operation characteristics.
  • Integrated ESD protection for enhanced reliability.
  • Robust AIR cavity package for improved thermal management and durability.

Applications

The BLS6G3135S-120,112 is primarily used in pulsed radar systems, including but not limited to:

  • Air traffic control and surveillance systems.
  • Weather radar systems.
  • Maritime and naval radar systems.
  • Ground-based radar systems for military and civilian use.

Q & A

  1. What is the frequency range of the BLS6G3135S-120,112? The frequency range is 3.1 GHz to 3.5 GHz.
  2. What is the output power of this transistor? The output power is 120 W.
  3. What is the supply voltage for this device? The supply voltage is 32 V.
  4. What is the quiescent current (IDq) of the BLS6G3135S-120,112? The quiescent current is 100 mA.
  5. What type of package does the BLS6G3135S-120,112 come in? It comes in an AIR cavity package.
  6. Is the BLS6G3135S-120,112 still in production? No, this product is no longer manufactured.
  7. What are the primary applications of the BLS6G3135S-120,112? It is used in pulsed radar systems, including air traffic control, weather radar, maritime and naval radar, and ground-based radar systems.
  8. Does the BLS6G3135S-120,112 have integrated ESD protection? Yes, it has integrated ESD protection.
  9. Why is the AIR cavity package used for this transistor? The AIR cavity package is used for improved thermal management and durability.
  10. Where can I find detailed specifications for the BLS6G3135S-120,112? Detailed specifications can be found in the datasheet available on Ampleon’s official website and other electronic component distributors like Digi-Key.

Product Attributes

Transistor Type:LDMOS
Frequency:3.1GHz ~ 3.5GHz
Gain:11dB
Voltage - Test:32 V
Current Rating (Amps):7.2A
Noise Figure:- 
Current - Test:100 mA
Power - Output:120W
Voltage - Rated:60 V
Package / Case:SOT-502B
Supplier Device Package:SOT502B
0 Remaining View Similar

In Stock

$338.15
2

Please send RFQ , we will respond immediately.

Same Series
BLS6G3135-120,112
BLS6G3135-120,112
RF FET LDMOS 60V 11DB SOT502A

Similar Products

Part Number BLS6G3135S-120,112 BLS6G3135-120,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Last Time Buy Last Time Buy
Transistor Type LDMOS LDMOS
Frequency 3.1GHz ~ 3.5GHz 3.1GHz ~ 3.5GHz
Gain 11dB 11dB
Voltage - Test 32 V 32 V
Current Rating (Amps) 7.2A 7.2A
Noise Figure - -
Current - Test 100 mA 100 mA
Power - Output 120W 120W
Voltage - Rated 60 V 60 V
Package / Case SOT-502B SOT-502A
Supplier Device Package SOT502B SOT502A

Related Product By Categories

CLF1G0035-100P
CLF1G0035-100P
NXP USA Inc.
RF SMALL SIGNAL FIELD-EFFECT TRA
BLF184XRSU
BLF184XRSU
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214B
AFT05MS004NT1
AFT05MS004NT1
NXP USA Inc.
FET RF 30V 520MHZ PLD
BLF647PSJ
BLF647PSJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
MMBF5484
MMBF5484
Fairchild Semiconductor
RF SMALL SIGNAL FIELD-EFFECT TRA
BLF888,112
BLF888,112
Ampleon USA Inc.
RF FET LDMOS 104V 19DB SOT979A
BF861B,235
BF861B,235
NXP USA Inc.
JFET N-CH 25V 15MA SOT23
PD55003
PD55003
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
PD85004
PD85004
STMicroelectronics
FET RF 40V 870MHZ
BLF7G21LS-160P,112
BLF7G21LS-160P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121B
NE5550279A-A
NE5550279A-A
CEL
FET RF 30V 900MHZ 79A
A2T18H455W23NR6
A2T18H455W23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO

Related Product By Brand

MX0912B351Y,114
MX0912B351Y,114
Ampleon USA Inc.
RF TRANS NPN 20V 1.215GHZ CDFM2
BLF888A,112
BLF888A,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539A
BLF7G20LS-200,118
BLF7G20LS-200,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF7G20LS-90P,118
BLF7G20LS-90P,118
Ampleon USA Inc.
POWER FIELD-EFFECT TRANSISTOR, N
BLF578XR,112
BLF578XR,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 50V SOT539A
BLF6G38S-25,112
BLF6G38S-25,112
Ampleon USA Inc.
RF FET LDMOS 65V 15DB SOT608B
BLF884PS,112
BLF884PS,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT1121B
BLF8G22LS-140U
BLF8G22LS-140U
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF8G22LS-220J
BLF8G22LS-220J
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
CLF1G0035-50H
CLF1G0035-50H
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
BLF7G22LS-130,112
BLF7G22LS-130,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF6G10S-45K,112
BLF6G10S-45K,112
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B