BLS6G3135S-120,112
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Ampleon USA Inc. BLS6G3135S-120,112

Manufacturer No:
BLS6G3135S-120,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 60V 11DB SOT502B
Delivery:
Payment:
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Product Introduction

Overview

The BLS6G3135S-120,112 is a high-power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by Ampleon USA Inc. This device is specifically designed for pulsed radar applications, operating within the frequency range of 3.1 GHz to 3.5 GHz. It is known for its robust performance and reliability, making it a preferred choice in various radar systems.

Key Specifications

ParameterValue
Frequency Range3.1 GHz to 3.5 GHz
Output Power120 W
Supply Voltage32 V
IDq (Quiescent Current)100 mA
Package TypeAIR cavity package

Key Features

  • High output power of 120 W, suitable for demanding radar applications.
  • Operates in the frequency range of 3.1 GHz to 3.5 GHz.
  • Easy power control due to its linear operation characteristics.
  • Integrated ESD protection for enhanced reliability.
  • Robust AIR cavity package for improved thermal management and durability.

Applications

The BLS6G3135S-120,112 is primarily used in pulsed radar systems, including but not limited to:

  • Air traffic control and surveillance systems.
  • Weather radar systems.
  • Maritime and naval radar systems.
  • Ground-based radar systems for military and civilian use.

Q & A

  1. What is the frequency range of the BLS6G3135S-120,112? The frequency range is 3.1 GHz to 3.5 GHz.
  2. What is the output power of this transistor? The output power is 120 W.
  3. What is the supply voltage for this device? The supply voltage is 32 V.
  4. What is the quiescent current (IDq) of the BLS6G3135S-120,112? The quiescent current is 100 mA.
  5. What type of package does the BLS6G3135S-120,112 come in? It comes in an AIR cavity package.
  6. Is the BLS6G3135S-120,112 still in production? No, this product is no longer manufactured.
  7. What are the primary applications of the BLS6G3135S-120,112? It is used in pulsed radar systems, including air traffic control, weather radar, maritime and naval radar, and ground-based radar systems.
  8. Does the BLS6G3135S-120,112 have integrated ESD protection? Yes, it has integrated ESD protection.
  9. Why is the AIR cavity package used for this transistor? The AIR cavity package is used for improved thermal management and durability.
  10. Where can I find detailed specifications for the BLS6G3135S-120,112? Detailed specifications can be found in the datasheet available on Ampleon’s official website and other electronic component distributors like Digi-Key.

Product Attributes

Transistor Type:LDMOS
Frequency:3.1GHz ~ 3.5GHz
Gain:11dB
Voltage - Test:32 V
Current Rating (Amps):7.2A
Noise Figure:- 
Current - Test:100 mA
Power - Output:120W
Voltage - Rated:60 V
Package / Case:SOT-502B
Supplier Device Package:SOT502B
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Same Series
BLS6G3135-120,112
BLS6G3135-120,112
RF FET LDMOS 60V 11DB SOT502A

Similar Products

Part Number BLS6G3135S-120,112 BLS6G3135-120,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Last Time Buy Last Time Buy
Transistor Type LDMOS LDMOS
Frequency 3.1GHz ~ 3.5GHz 3.1GHz ~ 3.5GHz
Gain 11dB 11dB
Voltage - Test 32 V 32 V
Current Rating (Amps) 7.2A 7.2A
Noise Figure - -
Current - Test 100 mA 100 mA
Power - Output 120W 120W
Voltage - Rated 60 V 60 V
Package / Case SOT-502B SOT-502A
Supplier Device Package SOT502B SOT502A

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