BLS6G3135S-120,112
  • Share:

Ampleon USA Inc. BLS6G3135S-120,112

Manufacturer No:
BLS6G3135S-120,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 60V 11DB SOT502B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLS6G3135S-120,112 is a high-power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by Ampleon USA Inc. This device is specifically designed for pulsed radar applications, operating within the frequency range of 3.1 GHz to 3.5 GHz. It is known for its robust performance and reliability, making it a preferred choice in various radar systems.

Key Specifications

ParameterValue
Frequency Range3.1 GHz to 3.5 GHz
Output Power120 W
Supply Voltage32 V
IDq (Quiescent Current)100 mA
Package TypeAIR cavity package

Key Features

  • High output power of 120 W, suitable for demanding radar applications.
  • Operates in the frequency range of 3.1 GHz to 3.5 GHz.
  • Easy power control due to its linear operation characteristics.
  • Integrated ESD protection for enhanced reliability.
  • Robust AIR cavity package for improved thermal management and durability.

Applications

The BLS6G3135S-120,112 is primarily used in pulsed radar systems, including but not limited to:

  • Air traffic control and surveillance systems.
  • Weather radar systems.
  • Maritime and naval radar systems.
  • Ground-based radar systems for military and civilian use.

Q & A

  1. What is the frequency range of the BLS6G3135S-120,112? The frequency range is 3.1 GHz to 3.5 GHz.
  2. What is the output power of this transistor? The output power is 120 W.
  3. What is the supply voltage for this device? The supply voltage is 32 V.
  4. What is the quiescent current (IDq) of the BLS6G3135S-120,112? The quiescent current is 100 mA.
  5. What type of package does the BLS6G3135S-120,112 come in? It comes in an AIR cavity package.
  6. Is the BLS6G3135S-120,112 still in production? No, this product is no longer manufactured.
  7. What are the primary applications of the BLS6G3135S-120,112? It is used in pulsed radar systems, including air traffic control, weather radar, maritime and naval radar, and ground-based radar systems.
  8. Does the BLS6G3135S-120,112 have integrated ESD protection? Yes, it has integrated ESD protection.
  9. Why is the AIR cavity package used for this transistor? The AIR cavity package is used for improved thermal management and durability.
  10. Where can I find detailed specifications for the BLS6G3135S-120,112? Detailed specifications can be found in the datasheet available on Ampleon’s official website and other electronic component distributors like Digi-Key.

Product Attributes

Transistor Type:LDMOS
Frequency:3.1GHz ~ 3.5GHz
Gain:11dB
Voltage - Test:32 V
Current Rating (Amps):7.2A
Noise Figure:- 
Current - Test:100 mA
Power - Output:120W
Voltage - Rated:60 V
Package / Case:SOT-502B
Supplier Device Package:SOT502B
0 Remaining View Similar

In Stock

$338.15
2

Please send RFQ , we will respond immediately.

Same Series
BLS6G3135-120,112
BLS6G3135-120,112
RF FET LDMOS 60V 11DB SOT502A

Similar Products

Part Number BLS6G3135S-120,112 BLS6G3135-120,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Last Time Buy Last Time Buy
Transistor Type LDMOS LDMOS
Frequency 3.1GHz ~ 3.5GHz 3.1GHz ~ 3.5GHz
Gain 11dB 11dB
Voltage - Test 32 V 32 V
Current Rating (Amps) 7.2A 7.2A
Noise Figure - -
Current - Test 100 mA 100 mA
Power - Output 120W 120W
Voltage - Rated 60 V 60 V
Package / Case SOT-502B SOT-502A
Supplier Device Package SOT502B SOT502A

Related Product By Categories

PD57018TR-E
PD57018TR-E
STMicroelectronics
TRANSISTOR RF POWERSO-10
PD55003S-E
PD55003S-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
PD85035S-E
PD85035S-E
STMicroelectronics
FET RF 40V 870MHZ
BLF8G09LS-270GWJ
BLF8G09LS-270GWJ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
CLF1G0060-10U
CLF1G0060-10U
Ampleon USA Inc.
RF FET HEMT 150V 14.5DB SOT1227A
BLF6G27S-45,112
BLF6G27S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF6G38LS-50,112
BLF6G38LS-50,112
Ampleon USA Inc.
RF FET LDMOS 65V 14DB SOT502B
MMBF4416LT1G
MMBF4416LT1G
onsemi
JFET N-CH 30V 15MA SOT23
BLF6G20S-45,118
BLF6G20S-45,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
BF1107,215
BF1107,215
NXP USA Inc.
MOSFET N-CH 3V 10MA SOT23
BF512,215
BF512,215
NXP USA Inc.
JFET N-CH 20V 30MA SOT23
A2T07H310-24SR6
A2T07H310-24SR6
NXP USA Inc.
FET RF 2CH 70V 880MHZ

Related Product By Brand

BLF188XRGJ
BLF188XRGJ
Ampleon USA Inc.
RF FET LDMOS 135V 24DB SOT1248C
BLF574XR,112
BLF574XR,112
Ampleon USA Inc.
RF FET LDMOS 110V 23DB SOT1214A
BLF7G20LS-90P,118
BLF7G20LS-90P,118
Ampleon USA Inc.
POWER FIELD-EFFECT TRANSISTOR, N
BLF888DSU
BLF888DSU
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539B
BLF7G27LS-100,112
BLF7G27LS-100,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
CLF1G0060-10U
CLF1G0060-10U
Ampleon USA Inc.
RF FET HEMT 150V 14.5DB SOT1227A
BLF6G10-45,135
BLF6G10-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 22.5DB SOT608A
BLF404,115
BLF404,115
Ampleon USA Inc.
RF FET NCHA 40V 11.5DB SOT409A
BLF861A,112
BLF861A,112
Ampleon USA Inc.
RF FET LDMOS 65V 14.5DB SOT540A
BLF6G20LS-110,118
BLF6G20LS-110,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT502B
BLF640U
BLF640U
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BLF8G22LS-160BVX
BLF8G22LS-160BVX
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1244B