BLS6G3135S-120,112
  • Share:

Ampleon USA Inc. BLS6G3135S-120,112

Manufacturer No:
BLS6G3135S-120,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 60V 11DB SOT502B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLS6G3135S-120,112 is a high-power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by Ampleon USA Inc. This device is specifically designed for pulsed radar applications, operating within the frequency range of 3.1 GHz to 3.5 GHz. It is known for its robust performance and reliability, making it a preferred choice in various radar systems.

Key Specifications

ParameterValue
Frequency Range3.1 GHz to 3.5 GHz
Output Power120 W
Supply Voltage32 V
IDq (Quiescent Current)100 mA
Package TypeAIR cavity package

Key Features

  • High output power of 120 W, suitable for demanding radar applications.
  • Operates in the frequency range of 3.1 GHz to 3.5 GHz.
  • Easy power control due to its linear operation characteristics.
  • Integrated ESD protection for enhanced reliability.
  • Robust AIR cavity package for improved thermal management and durability.

Applications

The BLS6G3135S-120,112 is primarily used in pulsed radar systems, including but not limited to:

  • Air traffic control and surveillance systems.
  • Weather radar systems.
  • Maritime and naval radar systems.
  • Ground-based radar systems for military and civilian use.

Q & A

  1. What is the frequency range of the BLS6G3135S-120,112? The frequency range is 3.1 GHz to 3.5 GHz.
  2. What is the output power of this transistor? The output power is 120 W.
  3. What is the supply voltage for this device? The supply voltage is 32 V.
  4. What is the quiescent current (IDq) of the BLS6G3135S-120,112? The quiescent current is 100 mA.
  5. What type of package does the BLS6G3135S-120,112 come in? It comes in an AIR cavity package.
  6. Is the BLS6G3135S-120,112 still in production? No, this product is no longer manufactured.
  7. What are the primary applications of the BLS6G3135S-120,112? It is used in pulsed radar systems, including air traffic control, weather radar, maritime and naval radar, and ground-based radar systems.
  8. Does the BLS6G3135S-120,112 have integrated ESD protection? Yes, it has integrated ESD protection.
  9. Why is the AIR cavity package used for this transistor? The AIR cavity package is used for improved thermal management and durability.
  10. Where can I find detailed specifications for the BLS6G3135S-120,112? Detailed specifications can be found in the datasheet available on Ampleon’s official website and other electronic component distributors like Digi-Key.

Product Attributes

Transistor Type:LDMOS
Frequency:3.1GHz ~ 3.5GHz
Gain:11dB
Voltage - Test:32 V
Current Rating (Amps):7.2A
Noise Figure:- 
Current - Test:100 mA
Power - Output:120W
Voltage - Rated:60 V
Package / Case:SOT-502B
Supplier Device Package:SOT502B
0 Remaining View Similar

In Stock

$338.15
2

Please send RFQ , we will respond immediately.

Same Series
BLS6G3135-120,112
BLS6G3135-120,112
RF FET LDMOS 60V 11DB SOT502A

Similar Products

Part Number BLS6G3135S-120,112 BLS6G3135-120,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Last Time Buy Last Time Buy
Transistor Type LDMOS LDMOS
Frequency 3.1GHz ~ 3.5GHz 3.1GHz ~ 3.5GHz
Gain 11dB 11dB
Voltage - Test 32 V 32 V
Current Rating (Amps) 7.2A 7.2A
Noise Figure - -
Current - Test 100 mA 100 mA
Power - Output 120W 120W
Voltage - Rated 60 V 60 V
Package / Case SOT-502B SOT-502A
Supplier Device Package SOT502B SOT502A

Related Product By Categories

MRFE6VS25LR5
MRFE6VS25LR5
NXP USA Inc.
FET RF 133V 512MHZ NI360L
BLF881S,112
BLF881S,112
Ampleon USA Inc.
RF MOSFET LDMOS 50V LDMOST
BLF888B,112
BLF888B,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
CLF1G0060-10
CLF1G0060-10
Ampleon USA Inc.
CLF1G0060-10 - 10W BROADBAND RF
PD55003-E
PD55003-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
BLF888AS,112
BLF888AS,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539B
BLF245B,112
BLF245B,112
Ampleon USA Inc.
RF FET 2 NC 65V 18DB SOT279A
BF545C,215
BF545C,215
NXP USA Inc.
JFET N-CH 30V 25MA SOT23
BLF6G38LS-50,118
BLF6G38LS-50,118
Ampleon USA Inc.
RF FET LDMOS 65V 14DB SOT502B
SD2918
SD2918
STMicroelectronics
TRANS RF N-CH HF/VHF/UHF M113
MRFE6VP8600HSR5
MRFE6VP8600HSR5
NXP USA Inc.
FET RF 2CH 130V 860MHZ NI1230S
BLF6G10LS-200RN
BLF6G10LS-200RN
Ampleon USA Inc.
RF FET LDMOS 65V SOT539

Related Product By Brand

BLF642,112
BLF642,112
Ampleon USA Inc.
RF MOSFET LDMOS 32V SOT467C
BLF888A,112
BLF888A,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539A
BLF6G10LS-200RN,11
BLF6G10LS-200RN,11
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT502B
BLF8G20LS-220U
BLF8G20LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 18.9DB SOT502B
BLF404,115
BLF404,115
Ampleon USA Inc.
RF FET NCHA 40V 11.5DB SOT409A
BLF3G21-30,112
BLF3G21-30,112
Ampleon USA Inc.
RF FET LDMOS 65V 13.5DB SOT467C
BLF248,112
BLF248,112
Ampleon USA Inc.
RF FET 2 NC 65V 11.5DB SOT262A1
BLF278,112
BLF278,112
Ampleon USA Inc.
RF FET 2 NC 125V 22DB SOT262A1
BLF6G38S-25,118
BLF6G38S-25,118
Ampleon USA Inc.
RF FET LDMOS 65V 15DB SOT608B
BLF6G27LS-40P,118
BLF6G27LS-40P,118
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
BLF6G10LS-200RN
BLF6G10LS-200RN
Ampleon USA Inc.
RF FET LDMOS 65V SOT539
BLF8G10LS-160V,118
BLF8G10LS-160V,118
Ampleon USA Inc.
TRANS RF PWR LDMOS 160W SOT502B