BLF6G27LS-40P,118
  • Share:

Ampleon USA Inc. BLF6G27LS-40P,118

Manufacturer No:
BLF6G27LS-40P,118
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 65V 17DB SOT1121B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF6G27LS-40P,118 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed and manufactured by Ampleon USA Inc. This component is specifically tailored for RF power amplifier applications in the frequency range of 2500 MHz to 2700 MHz, making it suitable for use in base stations, particularly for W-CDMA and multi-carrier systems. Although the product has been discontinued, it remains a significant component in the realm of RF power electronics due to its robust features and performance characteristics.

Key Specifications

Parameter Conditions Min Typ/Nom Max Unit
Manufacturer Part Number - - BLF6G27LS-40P,118 - -
Package / Case - - SOT-1121B (CDFM4) - -
Voltage - Rated - - 65V - V
Voltage - Test - - 28V - V
Transistor Type - - LDMOS (Dual), Common Source - -
Power - Output - - 40W - W
Gain P L(AV) = 20 W; V DS = 28 V - 17.5dB - dB
Frequency Range - 2500 MHz - 2700 MHz MHz
Drain Efficiency P L(AV) = 20 W; V DS = 28 V; 2500 MHz ≤ f ≤ 2700 MHz; I Dq = 450 mA - 37% - %
Current - Test - - 450mA - mA
Moisture Sensitivity Level (MSL) - - 1 (Unlimited) - -

Key Features

  • Excellent Ruggedness: Designed to withstand harsh operating conditions.
  • High Efficiency: Offers high drain efficiency, typically 37% at 2500 MHz to 2700 MHz.
  • Low Thermal Resistance: Provides excellent thermal stability.
  • Broadband Operation: Suitable for frequencies from 2300 MHz to 2700 MHz.
  • Low Output Capacitance: Improves performance in Doherty applications.
  • Low Memory Effects: Excellent pre-distortability.
  • Internally Matched: Ease of use in various applications.
  • Integrated ESD Protection: Enhanced reliability.
  • RoHS Compliant: Compliant to Directive 2002/95/EC regarding Restriction of Hazardous Substances.

Applications

  • RF Power Amplifiers for W-CDMA Base Stations: Optimized for use in the 2500 MHz to 2700 MHz frequency range.
  • Multi-Carrier Applications: Suitable for various multi-carrier systems in the same frequency range.
  • Radio/TV/Broadcasting: Can be used in broadcasting applications due to its high power and efficiency.
  • Radar and Air Traffic Control: High reliability and performance make it suitable for these critical applications.

Q & A

  1. What is the BLF6G27LS-40P,118 used for?

    The BLF6G27LS-40P,118 is used in RF power amplifier applications, particularly in base stations for W-CDMA and multi-carrier systems.

  2. What is the frequency range of the BLF6G27LS-40P,118?

    The frequency range is from 2500 MHz to 2700 MHz, with suitability for operation at 2300 MHz to 2400 MHz as well.

  3. What is the rated voltage of the BLF6G27LS-40P,118?

    The rated voltage is 65V.

  4. What is the output power of the BLF6G27LS-40P,118?

    The nominal output power is 40W.

  5. Is the BLF6G27LS-40P,118 RoHS compliant?

    Yes, it is compliant to Directive 2002/95/EC regarding Restriction of Hazardous Substances (RoHS).

  6. What is the gain of the BLF6G27LS-40P,118?

    The power gain is typically 17.5dB.

  7. What is the drain efficiency of the BLF6G27LS-40P,118?

    The drain efficiency is typically 37% at 2500 MHz to 2700 MHz.

  8. Is the BLF6G27LS-40P,118 still available for purchase?

    No, the product has been discontinued. The recommended replacement is the BLM9D2327S-50PB.

  9. What are the key features of the BLF6G27LS-40P,118?

    Key features include excellent ruggedness, high efficiency, low thermal resistance, and low output capacitance.

  10. What is the moisture sensitivity level (MSL) of the BLF6G27LS-40P,118?

    The MSL is 1 (Unlimited).

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:2.5GHz ~ 2.7GHz
Gain:17.5dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:450 mA
Power - Output:12W
Voltage - Rated:65 V
Package / Case:SOT-1121B
Supplier Device Package:LDMOST
0 Remaining View Similar

In Stock

-
11

Please send RFQ , we will respond immediately.

Same Series
BLF6G27LS-40P,112
BLF6G27LS-40P,112
RF MOSFET LDMOS DL 28V LDMOST
BLF6G27L-40P,112
BLF6G27L-40P,112
RF FET LDMOS 65V 17DB SOT1121A
BLF6G27L-40P,118
BLF6G27L-40P,118
RF FET LDMOS 65V 17DB SOT1121A
BLF6G27LS-40PGJ
BLF6G27LS-40PGJ
RF FET LDMOS 65V 17DB SOT1121E

Similar Products

Part Number BLF6G27LS-40P,118 BLF6G22LS-40P,118 BLF6G27L-40P,118 BLF6G27LS-40P,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 2.5GHz ~ 2.7GHz 2.11GHz ~ 2.17GHz 2.5GHz ~ 2.7GHz 2.5GHz ~ 2.7GHz
Gain 17.5dB 19dB 17.5dB 17.5dB
Voltage - Test 28 V 28 V 28 V 28 V
Current Rating (Amps) - 16A - -
Noise Figure - - - -
Current - Test 450 mA 410 mA 450 mA 450 mA
Power - Output 12W 13.5W 12W 12W
Voltage - Rated 65 V 65 V 65 V 65 V
Package / Case SOT-1121B SOT-1121B SOT-1121A SOT-1121B
Supplier Device Package LDMOST LDMOST LDMOST LDMOST

Related Product By Categories

AFT09S282NR3 REEL
AFT09S282NR3 REEL
Freescale Semiconductor
AFT09S282NR3 REEL
BLF888B,112
BLF888B,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
MMRF1015NR1
MMRF1015NR1
NXP USA Inc.
FET RF 68V 960MHZ TO270
NE5550779A-T1-A
NE5550779A-T1-A
Renesas Electronics America Inc
RF POWER N-CHANNEL, MOSFET
SD3931-10
SD3931-10
STMicroelectronics
IC RF PWR TRANS HF/VHF/UHF M174
BLF888AS,112
BLF888AS,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539B
BLF178XRS,112
BLF178XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 28DB SOT539B
BF908WR,115
BF908WR,115
NXP USA Inc.
MOSFET NCH DUAL GATE 12V CMPAK-4
BLF8G22LS-160BV:11
BLF8G22LS-160BV:11
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1120B
NE5550234-T1-AZ
NE5550234-T1-AZ
CEL
FET RF 30V 900MHZ 3MINIMOLD
AFT05MS003NT1
AFT05MS003NT1
NXP USA Inc.
IC TRANS RF LDMOS
A2T21H410-24SR6
A2T21H410-24SR6
NXP USA Inc.
IC TRANS RF LDMOS

Related Product By Brand

BLF645,112
BLF645,112
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT540A
BLF888BS,112
BLF888BS,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 50V SOT539B
BLF7G10LS-250,118
BLF7G10LS-250,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.5DB SOT502B
BLF7G20LS-90P,118
BLF7G20LS-90P,118
Ampleon USA Inc.
POWER FIELD-EFFECT TRANSISTOR, N
BLF6G22LS-40P,118
BLF6G22LS-40P,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT1121B
BLF7G20LS-200,112
BLF7G20LS-200,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF647PSJ
BLF647PSJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
CLF1G0035-100,112
CLF1G0035-100,112
Ampleon USA Inc.
RF MOSFET HEMT 50V SOT467C
BLF871,112
BLF871,112
Ampleon USA Inc.
RF FET LDMOS 89V 19DB SOT467C
BLF248,112
BLF248,112
Ampleon USA Inc.
RF FET 2 NC 65V 11.5DB SOT262A1
BLF647,112
BLF647,112
Ampleon USA Inc.
RF FET LDMOS 65V 14.5DB SOT540A
BLF7G24LS-140
BLF7G24LS-140
Ampleon USA Inc.
RF FET LDMOS 140W SOT502B