BLF578XRS,112
  • Share:

Ampleon USA Inc. BLF578XRS,112

Manufacturer No:
BLF578XRS,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 110V 23.5DB SOT539B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF578XRS,112 is a highly robust LDMOS power transistor designed by Ampleon USA Inc. for use in demanding applications. This transistor is an enhanced version of the BLF578, utilizing Ampleon's XR process to ensure maximum ruggedness and high RF performance. It is particularly suited for broadcast and industrial applications, operating within the HF to 500 MHz frequency band. With its high power handling capability of 1400 W, this transistor is ideal for applications requiring both reliability and high efficiency.

Key Specifications

ParameterValue
ManufacturerAmpleon USA Inc.
Product StatusNot For New Designs
TechnologyLDMOS
ConfigurationDual, Common Source
FrequencyUp to 500 MHz
Gain23.5 dB
Voltage - Rated110 V
Current - Test160 mA
Power - Output1400 W
Package TypeSOT-539B
Maximum Junction Temperature200°C
Gate to Source Voltage+11 V, -6 V
RoHS StatusCompliant

Key Features

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (HF to 500 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • Industrial, scientific, and medical applications
  • Broadcast transmitter applications

Q & A

  1. What is the maximum output power of the BLF578XRS,112?
    The maximum output power is 1400 W.
  2. What is the operating frequency range of the BLF578XRS,112?
    The transistor operates in the HF to 500 MHz frequency band.
  3. What package type is used for the BLF578XRS,112?
    The package type is SOT-539B.
  4. Is the BLF578XRS,112 RoHS compliant?
    Yes, it is RoHS compliant.
  5. What is the maximum junction temperature for the BLF578XRS,112?
    The maximum junction temperature is 200°C.
  6. What are the key applications of the BLF578XRS,112?
    The key applications include industrial, scientific, and medical applications, as well as broadcast transmitter applications.
  7. Does the BLF578XRS,112 have integrated ESD protection?
    Yes, it has integrated ESD protection.
  8. What is the gain of the BLF578XRS,112?
    The gain is 23.5 dB.
  9. What is the rated voltage of the BLF578XRS,112?
    The rated voltage is 110 V.
  10. Is the BLF578XRS,112 designed for broadband operation?
    Yes, it is designed for broadband operation from HF to 500 MHz.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:225MHz
Gain:23.5dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:40 mA
Power - Output:1400W
Voltage - Rated:110 V
Package / Case:SOT-539B
Supplier Device Package:SOT539B
0 Remaining View Similar

In Stock

$339.99
2

Please send RFQ , we will respond immediately.

Same Series
BLF578XRS,112
BLF578XRS,112
RF FET LDMOS 110V 23.5DB SOT539B

Similar Products

Part Number BLF578XRS,112 BLF178XRS,112 BLF574XRS,112 BLF578XR,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Active Active Active Active
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 225MHz 108MHz 225MHz 225MHz
Gain 23.5dB 28dB 23.5dB 23.5dB
Voltage - Test 50 V 50 V 50 V 50 V
Current Rating (Amps) - - - -
Noise Figure - - - -
Current - Test 40 mA 40 mA 100 mA 40 mA
Power - Output 1400W 1400W 600W 1400W
Voltage - Rated 110 V 110 V 110 V 110 V
Package / Case SOT-539B SOT-539B SOT-1214B SOT-539A
Supplier Device Package SOT539B SOT539B LDMOST SOT539A

Related Product By Categories

MRF6V12500HR5
MRF6V12500HR5
NXP USA Inc.
FET RF 110V 1.03GHZ NI-780H
BLF6G27LS-75,112
BLF6G27LS-75,112
NXP USA Inc.
RF TRANSISTOR
BLF7G27LS-100,118
BLF7G27LS-100,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF6G10LS-135RN:11
BLF6G10LS-135RN:11
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BF992,215
BF992,215
NXP USA Inc.
MOSFET NCH DUAL GATE 20V SOT143B
BF862,235
BF862,235
NXP USA Inc.
JFET N-CH 20V 25MA SOT23
BLF6G22LS-130,118
BLF6G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
PD55008L-E
PD55008L-E
STMicroelectronics
TRANSISTOR RF 5X5 POWERFLAT
BLF278/01,112
BLF278/01,112
Ampleon USA Inc.
RF FET 2 NC 125V 22DB SOT262A1
MRFE6VP8600HSR5
MRFE6VP8600HSR5
NXP USA Inc.
FET RF 2CH 130V 860MHZ NI1230S
BLF6G27LS-40P,118
BLF6G27LS-40P,118
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
NE5550279A-T1-A
NE5550279A-T1-A
CEL
FET RF 30V 900MHZ 79A

Related Product By Brand

BLF183XRU
BLF183XRU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121A
BLF8G10LS-300PJ
BLF8G10LS-300PJ
Ampleon USA Inc.
RF FET LDMOS 65V 20.5DB SOT539B
BLF7G10LS-250,118
BLF7G10LS-250,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.5DB SOT502B
BLF184XRGJ
BLF184XRGJ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
CLF1G0035-50
CLF1G0035-50
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
CLF1G0060-10U
CLF1G0060-10U
Ampleon USA Inc.
RF FET HEMT 150V 14.5DB SOT1227A
BLS6G3135S-120,112
BLS6G3135S-120,112
Ampleon USA Inc.
RF FET LDMOS 60V 11DB SOT502B
CLF1G0035-100H
CLF1G0035-100H
Ampleon USA Inc.
CLF1G0035-100 - 100W BROADBAND R
BLF6G10LS-260PRN:1
BLF6G10LS-260PRN:1
Ampleon USA Inc.
RF FET LDMOS 65V 22DB SOT539B
BLF6G27S-45,112
BLF6G27S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF7G27LS-140,118
BLF7G27LS-140,118
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT502B
BLF7G24LS-140
BLF7G24LS-140
Ampleon USA Inc.
RF FET LDMOS 140W SOT502B