Overview
The BLF6G10S-45,112 is a 45 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor manufactured by Ampleon USA Inc. This component is designed for base station applications, particularly in the frequency range of 700 MHz to 1000 MHz. It is known for its high efficiency, excellent ruggedness, and easy power control, making it a reliable choice for RF power amplifiers in wireless infrastructure.
Key Specifications
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| f range | frequency range | 700 | 1000 | MHz | ||
| P L(3dB) | nominal output power at 3 dB gain compression | Test signal: 2-c WCDMA | 45 | W | ||
| G p | power gain | P L(AV) = 1 W; V DS = 28 V | 21.8 | 23 | 24.5 | dB |
| RL in | input return loss | P L(AV) = 1 W; V DS = 28 V; I Dq = 350 mA | -9 | -5.5 | dB | |
| η D | drain efficiency | P L(AV) = 1 W; V DS = 28 V; 920 MHz < f < 960 MHz; I Dq = 350 mA | 7 | 8 | % | |
| P L(AV) | average output power | 1 | W | |||
| ACPR | adjacent channel power ratio | P L(AV) = 1 W; V DS = 28 V; 920 MHz < f < 960 MHz; I Dq = 350 mA | -48.5 | -45.5 | dBc | |
| V DS | drain-source voltage | 28 | V | |||
| I Dq | quiescent drain current | 350 | mA |
Key Features
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (700 MHz to 1000 MHz)
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
Applications
- RF power amplifiers for W-CDMA base stations
- Multicarrier applications in the 700 MHz to 1000 MHz frequency range
Q & A
- What is the frequency range of the BLF6G10S-45,112 transistor?
The BLF6G10S-45,112 operates in the frequency range of 700 MHz to 1000 MHz. - What is the nominal output power at 3 dB gain compression for this transistor?
The nominal output power at 3 dB gain compression is 45 W. - What are the key features of the BLF6G10S-45,112 transistor?
The key features include easy power control, integrated ESD protection, excellent ruggedness, high efficiency, and excellent thermal stability. - What are the typical applications of the BLF6G10S-45,112 transistor?
The transistor is typically used in RF power amplifiers for W-CDMA base stations and multicarrier applications in the 700 MHz to 1000 MHz frequency range. - Is the BLF6G10S-45,112 transistor RoHS compliant?
Yes, the BLF6G10S-45,112 transistor is RoHS compliant. - What is the package type of the BLF6G10S-45,112 transistor?
The transistor is packaged in a SOT608B (CDFM2) package. - What is the drain-source voltage for this transistor?
The drain-source voltage (V DS) is typically 28 V. - What is the quiescent drain current for this transistor?
The quiescent drain current (I Dq) is typically 350 mA. - Is the BLF6G10S-45,112 transistor still in production?
No, the BLF6G10S-45,112 transistor has been discontinued. - Where can I find the datasheet for the BLF6G10S-45,112 transistor?
The datasheet can be found on the Ampleon website or through distributors like Digi-Key and WIN SOURCE.
