MMRF1015NR1
  • Share:

NXP USA Inc. MMRF1015NR1

Manufacturer No:
MMRF1015NR1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 68V 960MHZ TO270
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMRF1015NR1 is a high-performance RF power transistor produced by NXP USA Inc. This component is designed using Laterally Diffused Metal Oxide Semiconductor (LDMOS) technology, which offers superior efficiency and reliability. It is particularly suited for high-frequency applications, making it an ideal choice for various RF and microwave systems.

Key Specifications

ParameterValue
Frequency960 MHz
Gain18 dB
TechnologyLDMOS
Test Voltage28 V
PackageTape & Reel (TR)
Mounting TypeSurface Mount

Key Features

  • High gain of 18 dB, ensuring strong signal amplification.
  • Operates at a frequency of 960 MHz, making it suitable for various RF applications.
  • LDMOS technology for high efficiency and reliability.
  • Surface mount package for easy integration into modern PCB designs.

Applications

The MMRF1015NR1 is widely used in various RF and microwave systems, including but not limited to:

  • Wireless communication systems.
  • Radar systems.
  • RF amplifiers and transmitters.
  • Microwave ovens and other high-frequency heating applications.

Q & A

  1. What is the operating frequency of the MMRF1015NR1?
    The MMRF1015NR1 operates at a frequency of 960 MHz.
  2. What technology is used in the MMRF1015NR1?
    The MMRF1015NR1 uses LDMOS technology.
  3. What is the gain of the MMRF1015NR1?
    The gain of the MMRF1015NR1 is 18 dB.
  4. What is the test voltage for the MMRF1015NR1?
    The test voltage for the MMRF1015NR1 is 28 V.
  5. What type of package does the MMRF1015NR1 come in?
    The MMRF1015NR1 comes in a Tape & Reel (TR) package.
  6. What is the mounting type of the MMRF1015NR1?
    The MMRF1015NR1 is a surface mount component.
  7. What are some common applications of the MMRF1015NR1?
    The MMRF1015NR1 is used in wireless communication systems, radar systems, RF amplifiers, and microwave ovens.
  8. Why is LDMOS technology beneficial in the MMRF1015NR1?
    LDMOS technology offers high efficiency and reliability, making it suitable for high-frequency applications.
  9. Can the MMRF1015NR1 be used in high-power applications?
    Yes, the MMRF1015NR1 is designed for high-power RF applications due to its high gain and efficient LDMOS technology.
  10. Where can I find detailed specifications for the MMRF1015NR1?
    Detailed specifications can be found on official NXP websites, Digi-Key, Mouser, and other electronic component distributors.

Product Attributes

Transistor Type:LDMOS
Frequency:960MHz
Gain:18dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:125 mA
Power - Output:10W
Voltage - Rated:68 V
Package / Case:TO-270-2
Supplier Device Package:TO-270-2
0 Remaining View Similar

In Stock

$21.17
30

Please send RFQ , we will respond immediately.

Same Series
MMRF1015GNR1
MMRF1015GNR1
FET RF 68V 960MHZ

Similar Products

Part Number MMRF1015NR1 MMRF1315NR1 MMRF1018NR1 MMRF1012NR1 MMRF1015GNR1
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Obsolete Obsolete Obsolete Active
Transistor Type LDMOS LDMOS LDMOS LDMOS LDMOS
Frequency 960MHz 880MHz 860MHz 220MHz 960MHz
Gain 18dB 21.1dB 22dB 23.9dB 18dB
Voltage - Test 28 V 28 V 50 V 50 V 28 V
Current Rating (Amps) - - - - -
Noise Figure - - - - -
Current - Test 125 mA 450 mA 350 mA 30 mA 125 mA
Power - Output 10W 14W 18W 10W 10W
Voltage - Rated 68 V 66 V 120 V 120 V 68 V
Package / Case TO-270-2 TO-270-2 TO-270-4 TO-270-2 TO-270BA
Supplier Device Package TO-270-2 TO-270-2 TO-270 WB-4 TO-270-2 TO-270-2 GULL

Related Product By Categories

BLF184XRU
BLF184XRU
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214A
MRFE6VP5300NR1
MRFE6VP5300NR1
NXP USA Inc.
FET RF 2CH 133V 230MHZ TO-270
MRFE6VP5150NR1
MRFE6VP5150NR1
NXP USA Inc.
RF MOSFET LDMOS DL 50V TO270
BLF8G22LS-220U
BLF8G22LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BLF6G27-45,112
BLF6G27-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608A
PD55008L-E
PD55008L-E
STMicroelectronics
TRANSISTOR RF 5X5 POWERFLAT
BLF6G20S-45,112
BLF6G20S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
BF510,215
BF510,215
NXP USA Inc.
RF MOSFET N-CH JFET 10V TO236AB
MRFE6VP8600HSR5
MRFE6VP8600HSR5
NXP USA Inc.
FET RF 2CH 130V 860MHZ NI1230S
NE5550779A-A
NE5550779A-A
CEL
FET RF 30V 900MHZ 79A
A2T21H410-24SR6
A2T21H410-24SR6
NXP USA Inc.
IC TRANS RF LDMOS
BF861B
BF861B
NXP USA Inc.
SMALL SIGNAL FIELD-EFFECT TRANSI

Related Product By Brand

BAT54S/6215
BAT54S/6215
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
74LVC1GX04GW/C4125
74LVC1GX04GW/C4125
NXP USA Inc.
74LVC1GX04GW - CLOCK GENERATOR
MK11DN512AVMC5
MK11DN512AVMC5
NXP USA Inc.
IC MCU 32B 512KB FLASH 121MAPBGA
LPC11U24FBD48/301,
LPC11U24FBD48/301,
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 48LQFP
LPC2131FBD64/01,15
LPC2131FBD64/01,15
NXP USA Inc.
IC MCU 16/32BIT 32KB FLSH 64LQFP
LPC1823JET100E
LPC1823JET100E
NXP USA Inc.
IC MCU 32BIT 512KB FLSH 100TFBGA
MC9S12XEP100MAL
MC9S12XEP100MAL
NXP USA Inc.
IC MCU 16BIT 1MB FLASH 112LQFP
LPC11E67JBD48E
LPC11E67JBD48E
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 48LQFP
MIMX8ML6CVNKZAB
MIMX8ML6CVNKZAB
NXP USA Inc.
IC I.MX 8M PLUS QUAD BGA
74HCT4053PW-Q100118
74HCT4053PW-Q100118
NXP USA Inc.
SINGLE-ENDED MUX,TSSOP16
JN5169-001-M06-2Z
JN5169-001-M06-2Z
NXP USA Inc.
RX TXRX MODULE 802.15.4 U.FL SMD
PCF7941ATSM2AB120,
PCF7941ATSM2AB120,
NXP USA Inc.
IC REMOTE KEYLESS ENTRY 20SSOP