BC856BT115
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NXP USA Inc. BC856BT115

Manufacturer No:
BC856BT115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
TRANS PNP 65V 0.1A SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856BT115 is a general-purpose bipolar junction transistor (BJT) manufactured by NXP USA Inc. This PNP transistor is designed for a wide range of amplifier applications and is known for its reliability and performance in low-power surface mount configurations.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) -65 V
Collector-Base Voltage (VCB0) -80 V
Emitter-Base Voltage (VEB0) -5.0 V
Collector Current (IC) - Continuous -100 mA
Collector Current (IC) - Peak (1 ms pulse) -200 mA
DC Current Gain (hFE) 125 - 420 -
Collector-Emitter Saturation Voltage (VCE(sat)) -0.3 - 0.65 V
Base-Emitter Saturation Voltage (VBE(sat)) -0.7 - 0.9 V
Operating Frequency 100 MHz -
Power Dissipation 150 mW -
Package Type SC-75 (SOT-323) -

Key Features

  • General Purpose Amplifier: Designed for general-purpose amplifier applications.
  • Low Power Surface Mount: Housed in the SC-75 (SOT-323) package, suitable for low power surface mount applications.
  • High Current Gain: Offers a DC current gain (hFE) ranging from 125 to 420.
  • Low Saturation Voltages: Features low collector-emitter and base-emitter saturation voltages.
  • High Operating Frequency: Operates up to 100 MHz.
  • Environmental Compliance: Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

Applications

The BC856BT115 transistor is versatile and can be used in a variety of applications, including:

  • Amplifier Circuits: Suitable for general-purpose amplifier applications in audio, radio, and other electronic devices.
  • Switching Circuits: Can be used in switching circuits due to its high current gain and low saturation voltages.
  • Automotive Electronics: Qualified for automotive applications with AEC-Q101 certification.
  • Consumer Electronics: Used in various consumer electronic devices requiring low power and high reliability.

Q & A

  1. What is the BC856BT115 transistor?

    The BC856BT115 is a PNP bipolar junction transistor (BJT) manufactured by NXP USA Inc., designed for general-purpose amplifier applications.

  2. What is the collector-emitter voltage rating of the BC856BT115?

    The collector-emitter voltage (VCEO) rating is -65 V.

  3. What is the maximum collector current for the BC856BT115?

    The maximum continuous collector current (IC) is -100 mA, and the peak collector current (1 ms pulse) is -200 mA.

  4. What is the operating frequency of the BC856BT115?

    The transistor operates up to 100 MHz.

  5. Is the BC856BT115 environmentally compliant?

    Yes, it is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  6. What package type is the BC856BT115 available in?

    The transistor is housed in the SC-75 (SOT-323) package.

  7. What are some common applications of the BC856BT115?

    It is used in amplifier circuits, switching circuits, automotive electronics, and various consumer electronic devices.

  8. Is the BC856BT115 certified for automotive use?

    Yes, it is AEC-Q101 qualified for automotive applications.

  9. What is the power dissipation of the BC856BT115?

    The power dissipation is 150 mW.

  10. What are the saturation voltages for the BC856BT115?

    The collector-emitter saturation voltage (VCE(sat)) is -0.3 to -0.65 V, and the base-emitter saturation voltage (VBE(sat)) is -0.7 to -0.9 V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:150 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75
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