Overview
The MRFE6VS25GNR1 is a high-performance RF power LDMOS transistor designed and manufactured by NXP USA Inc. This transistor is optimized for both narrowband and broadband applications, including ISM (Industrial, Scientific, and Medical), broadcast, and aerospace sectors. It operates within a frequency range of 1.8 to 2000 MHz, making it versatile for various RF power amplification needs.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | -0.5, +133 | Vdc |
| Gate-Source Voltage | VGS | -6.0, +10 | Vdc |
| Storage Temperature Range | Tstg | -65 to +150 | °C |
| Case Operating Temperature | TC | -40 to +150 | °C |
| Operating Junction Temperature | TJ | -40 to +225 | °C |
| Power Gain | Gps | 24.0 - 27.0 | dB |
| Drain Efficiency | ηD | 70.0 - 74.5 | % |
| Input Return Loss | IRL | -16 to -10 | dB |
Key Features
- High Power Handling: The MRFE6VS25GNR1 can handle up to 25 W of peak output power and operates with a drain-source voltage of up to 133 Vdc.
- Broad Frequency Range: It operates across a wide frequency range from 1.8 to 2000 MHz, making it suitable for various RF applications.
- High Efficiency: The transistor offers high drain efficiency, ranging from 70% to 74.5%, which is crucial for minimizing heat and maximizing performance.
- Robust Construction: The device is packaged in a TO-270BA package, which is designed for high reliability and durability.
- Compliance and Sustainability: The MRFE6VS25GNR1 is compliant with EU RoHS, ELV, and China RoHS directives, and it has an environmental friendly use period (EFUP) of 50 years.
Applications
- ISM (Industrial, Scientific, and Medical) Applications: Suitable for high-power RF amplifiers in ISM bands.
- Broadcast Applications: Used in broadcast transmitters and amplifiers due to its high power handling and efficiency.
- Aerospace Applications: Employed in various aerospace systems requiring reliable and high-performance RF power amplification.
- RF Power Amplifiers: Ideal for designing high-power RF amplifiers in different frequency ranges.
Q & A
- What is the maximum drain-source voltage of the MRFE6VS25GNR1?
The maximum drain-source voltage (VDSS) is +133 Vdc.
- What is the operating frequency range of the MRFE6VS25GNR1?
The operating frequency range is from 1.8 to 2000 MHz.
- What is the typical drain efficiency of the MRFE6VS25GNR1?
The typical drain efficiency (ηD) ranges from 70% to 74.5%.
- What is the package type of the MRFE6VS25GNR1?
The device is packaged in a TO-270BA package.
- Is the MRFE6VS25GNR1 compliant with RoHS directives?
- What are the typical applications of the MRFE6VS25GNR1?
- What is the maximum operating junction temperature of the MRFE6VS25GNR1?
J) is +225°C. - What is the storage temperature range for the MRFE6VS25GNR1?
stg) is -65 to +150°C. - How much peak output power can the MRFE6VS25GNR1 handle?
- What is the environmental friendly use period (EFUP) of the MRFE6VS25GNR1?
