BLF6G10LS-135R,118
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Ampleon USA Inc. BLF6G10LS-135R,118

Manufacturer No:
BLF6G10LS-135R,118
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 65V 21DB SOT502B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF6G10LS-135R,118 is a high-performance RF power transistor manufactured by Ampleon USA Inc. This LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor is designed for base station applications, operating within the frequency range of 800 MHz to 1000 MHz. It is known for its high power handling and efficiency, making it a reliable choice for wireless communication systems.

Key Specifications

ParameterValue
Device TypeRF FET LDMOS
Maximum Power135 W
Drain-Source Voltage (Vds)65 V
Frequency Range800 MHz to 1000 MHz
PackagingTape & Reel (TR), SOT502B
Rohs ComplianceRohs Compliant

Key Features

  • High power handling of up to 135 W
  • Operates within the frequency range of 800 MHz to 1000 MHz
  • LDMOS technology for high efficiency and reliability
  • Drain-Source voltage of 65 V
  • Rohs Compliant

Applications

The BLF6G10LS-135R,118 is primarily used in base station applications for wireless communication systems. It is suitable for various RF power amplifier designs where high power and efficiency are required.

Q & A

  1. What is the maximum power handling of the BLF6G10LS-135R,118?
    The maximum power handling is 135 W.
  2. What is the frequency range of the BLF6G10LS-135R,118?
    The frequency range is from 800 MHz to 1000 MHz.
  3. What type of packaging is available for the BLF6G10LS-135R,118?
    The transistor is available in Tape & Reel (TR) packaging and uses the SOT502B package type.
  4. Is the BLF6G10LS-135R,118 Rohs Compliant?
    Yes, it is Rohs Compliant.
  5. What is the drain-source voltage (Vds) of the BLF6G10LS-135R,118?
    The drain-source voltage (Vds) is 65 V.
  6. What technology is used in the BLF6G10LS-135R,118?
    The transistor uses LDMOS technology.
  7. What are the primary applications of the BLF6G10LS-135R,118?
    The primary applications are in base station systems for wireless communication.
  8. Who is the manufacturer of the BLF6G10LS-135R,118?
    The manufacturer is Ampleon USA Inc.
  9. Is the BLF6G10LS-135R,118 still in production?
    No, it is currently discontinued.
  10. Where can I find detailed specifications for the BLF6G10LS-135R,118?
    Detailed specifications can be found on the datasheet available through distributors like Digi-Key, RFMW, and the manufacturer's official resources.

Product Attributes

Transistor Type:LDMOS
Frequency:871.5MHz ~ 891.5MHz
Gain:21dB
Voltage - Test:28 V
Current Rating (Amps):32A
Noise Figure:- 
Current - Test:950 mA
Power - Output:26.5W
Voltage - Rated:65 V
Package / Case:SOT-502B
Supplier Device Package:SOT502B
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Same Series
BLF6G10LS-135RN,11
BLF6G10LS-135RN,11
RF FET LDMOS 65V 21DB SOT502B
BLF6G10-135RN,112
BLF6G10-135RN,112
RF FET LDMOS 65V 21DB SOT502A

Similar Products

Part Number BLF6G10LS-135R,118 BLF6G10LS-135R,112
Manufacturer Ampleon USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Transistor Type LDMOS LDMOS
Frequency 871.5MHz ~ 891.5MHz 871.5MHz ~ 891.5MHz
Gain 21dB 21dB
Voltage - Test 28 V 28 V
Current Rating (Amps) 32A 32A
Noise Figure - -
Current - Test 950 mA 950 mA
Power - Output 26.5W 26.5W
Voltage - Rated 65 V 65 V
Package / Case SOT-502B SOT-502B
Supplier Device Package SOT502B SOT502B

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