Overview
The BLF7G22LS-200,112 is a 200 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for use in base station applications. This transistor operates within the frequency range of 2110 MHz to 2170 MHz, making it suitable for W-CDMA and other multicarrier systems. Although this product has been discontinued, it remains relevant for understanding high-power RF transistor technology.
Key Specifications
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| f range | frequency range | - | 2110 | - | 2170 | MHz |
| P L(3dB) | nominal output power at 3 dB gain compression | Test signal: 2-c W-CDMA | - | 200 | - | W |
| G p | power gain | P L(AV) = 55 W; V DS = 28 V | 16.8 | 18.5 | - | dB |
| RL in | input return loss | P L(AV) = 55 W; V DS = 28 V; I Dq = 1620 mA | -15 | -6 | - | dB |
| η D | drain efficiency | P L(AV) = 55 W; V DS = 28 V; I Dq = 1620 mA | 27 | 31 | - | % |
| P L(AV) | average output power | - | - | 55 | - | W |
| ACPR | adjacent channel power ratio | P L(AV) = 55 W; V DS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; I Dq = 1620 mA | -31 | -25.5 | - | dBc |
Key Features
- Excellent Ruggedness: The transistor is designed to withstand harsh operating conditions.
- High Efficiency: Offers high drain efficiency, typically up to 31%.
- Internally Matched: Simplifies the design process by being internally matched for ease of use.
- Integrated ESD Protection: Provides built-in protection against electrostatic discharge.
- Low Memory Effects: Designed to provide excellent pre-distortability with low memory effects.
- Low Rth: Ensures excellent thermal stability with a low thermal resistance.
- RoHS Compliance: Compliant with Directive 2002/95/EC regarding the Restriction of Hazardous Substances.
Applications
- RF Power Amplifiers for W-CDMA Base Stations: Optimized for use in W-CDMA base stations within the 2110 MHz to 2170 MHz frequency range.
- Multicarrier Applications: Suitable for multicarrier systems operating in the same frequency range.
Q & A
- What is the frequency range of the BLF7G22LS-200,112 transistor?
The frequency range is from 2110 MHz to 2170 MHz. - What is the nominal output power at 3 dB gain compression?
The nominal output power at 3 dB gain compression is 200 W. - What is the typical drain efficiency of this transistor?
The typical drain efficiency is up to 31%. - Is the transistor internally matched?
Yes, the transistor is internally matched for ease of use. - Does the transistor have integrated ESD protection?
Yes, it has built-in ESD protection. - What are the key applications of this transistor?
The key applications include RF power amplifiers for W-CDMA base stations and multicarrier systems. - Is the BLF7G22LS-200,112 transistor still in production?
No, this product has been discontinued. - What is the package type of the BLF7G22LS-200,112 transistor?
The package type is SOT502B. - What is the thermal stability like for this transistor?
The transistor has low Rth, providing excellent thermal stability. - Is the transistor compliant with RoHS regulations?
Yes, it is compliant with Directive 2002/95/EC regarding the Restriction of Hazardous Substances.
