Overview
The BLF8G09LS-270GWJ is a 270 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. This transistor is optimized for base station applications, particularly in the frequency range of 716 MHz to 960 MHz. It is known for its improved video bandwidth, making it suitable for W-CDMA and multi-carrier applications.
Key Specifications
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| f range | frequency range | 716 | 960 | MHz | ||
| P L(3dB) | nominal output power at 3 dB gain compression | Test signal: 2-c W-CDMA | 270 | W | ||
| G p | power gain | P L(AV) = 67 W; V DS = 28 V | 18.8 | 20 | dB | |
| RL in | input return loss | P L(AV) = 67 W; V DS = 28 V; I Dq = 2000 mA | -13 | -9 | dB | |
| η D | drain efficiency | P L(AV) = 67 W; V DS = 28 V; 716 MHz < f < 728 MHz; I Dq = 2000 mA | 28 | 33 | % | |
| ACPR 5M | adjacent channel power ratio (5 MHz) | P L(AV) = 67 W; V DS = 28 V; 716 MHz < f < 728 MHz; I Dq = 2000 mA | -35 | -30 | dBc |
Key Features
- Excellent Ruggedness: The transistor is designed to withstand harsh operating conditions.
- High Efficiency: Offers high drain efficiency, typically up to 33%.
- Low Thermal Resistance: Provides excellent thermal stability due to its low thermal resistance.
- Improved Video Bandwidth: Decoupling leads enable improved video bandwidth, typically 55 MHz.
- Internally Matched: Simplifies the design process by being internally matched for ease of use.
- Integrated ESD Protection: Built-in ESD protection enhances the device's reliability.
- Compliant to RoHS Directive: Meets the requirements of Directive 2002/95/EC regarding the Restriction of Hazardous Substances.
- Design Optimized for Gull-Wing and Straight Lead Versions: Flexible design to accommodate different mounting needs.
Applications
The BLF8G09LS-270GWJ is primarily used in RF power amplifiers for W-CDMA base stations and multi-carrier applications within the frequency range of 716 MHz to 960 MHz.
Q & A
- What is the frequency range of the BLF8G09LS-270GWJ transistor?
The frequency range is from 716 MHz to 960 MHz.
- What is the nominal output power at 3 dB gain compression?
The nominal output power at 3 dB gain compression is 270 W.
- What is the typical power gain of the transistor?
The typical power gain is 20 dB.
- What is the drain efficiency of the transistor?
The drain efficiency is typically up to 33%.
- Is the transistor internally matched?
Yes, the transistor is internally matched for ease of use.
- Does the transistor have integrated ESD protection?
Yes, it has built-in ESD protection.
- What type of applications is the transistor suitable for?
The transistor is suitable for RF power amplifiers in W-CDMA base stations and multi-carrier applications.
- Is the transistor compliant with RoHS Directive?
Yes, it is compliant with Directive 2002/95/EC regarding the Restriction of Hazardous Substances.
- What is the typical video bandwidth of the transistor?
The typical video bandwidth is 55 MHz.
- Is the transistor discontinued?
Yes, the BLF8G09LS-270GWJ transistor has been discontinued by Ampleon.
