BLF645,112
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Ampleon USA Inc. BLF645,112

Manufacturer No:
BLF645,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 65V 16DB SOT540A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF645,112 is a 100 W LDMOS RF power push-pull transistor manufactured by Ampleon USA Inc. This transistor is designed for broadcast transmitter and industrial applications, offering excellent ruggedness and broadband performance. It is suitable for a wide frequency range from HF to 1400 MHz, making it ideal for various digital applications.

Key Specifications

ParameterValue
Frequency RangeHF to 1400 MHz
Output Power100 W
Gain18 dB
ProcessLDMOS
Drain Voltage (VDS)32 V
Current Rating32 A
VSWR (Voltage Standing Wave Ratio)Up to 10:1

Key Features

  • High output power of 100 W, making it suitable for high-power applications.
  • Wide frequency range from HF to 1400 MHz, providing versatility in various applications.
  • Excellent ruggedness, capable of withstanding a load mismatch corresponding to VSWR = 10:1 through all phases.
  • Broadband performance, ideal for digital applications.
  • LDMOS technology for high efficiency and reliability.

Applications

  • Broadcast transmitters: Suitable for high-power broadcast applications due to its high output power and ruggedness.
  • Industrial applications: Used in various industrial settings requiring high-power RF signals.
  • Digital applications: Ideal for digital modulation schemes due to its broadband performance.

Q & A

  1. What is the output power of the BLF645,112 transistor?
    The output power of the BLF645,112 transistor is 100 W.
  2. What is the frequency range of the BLF645,112 transistor?
    The frequency range is from HF to 1400 MHz.
  3. What type of process is used in the BLF645,112 transistor?
    The transistor uses LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology.
  4. What is the drain voltage (VDS) of the BLF645,112 transistor?
    The drain voltage (VDS) is 32 V.
  5. Can the BLF645,112 withstand load mismatches?
    Yes, it can withstand a load mismatch corresponding to VSWR = 10:1 through all phases.
  6. What are the typical applications of the BLF645,112 transistor?
    It is used in broadcast transmitters, industrial applications, and digital applications.
  7. What is the current rating of the BLF645,112 transistor?
    The current rating is 32 A.
  8. What is the gain of the BLF645,112 transistor?
    The gain is 18 dB.
  9. Why is LDMOS technology used in the BLF645,112 transistor?
    LDMOS technology is used for its high efficiency and reliability.
  10. Is the BLF645,112 suitable for digital modulation schemes?
    Yes, it is ideal for digital applications due to its broadband performance.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:1.3GHz
Gain:16.5dB
Voltage - Test:32 V
Current Rating (Amps):32A
Noise Figure:- 
Current - Test:900 mA
Power - Output:100W
Voltage - Rated:65 V
Package / Case:SOT-540A
Supplier Device Package:LDMOST
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Similar Products

Part Number BLF645,112 BLF647,112 BLF245,112 BLF642,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Active Obsolete Obsolete Active
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source N-Channel LDMOS
Frequency 1.3GHz 600MHz 175MHz 1.3GHz
Gain 16.5dB 14.5dB 15.5dB 19dB
Voltage - Test 32 V 28 V 28 V 32 V
Current Rating (Amps) 32A 18A 6A -
Noise Figure - - 2dB -
Current - Test 900 mA - 50 mA 200 mA
Power - Output 100W 120W 30W 35W
Voltage - Rated 65 V 65 V 65 V 65 V
Package / Case SOT-540A SOT-540A SOT-123A SOT-467C
Supplier Device Package LDMOST LDMOST CRFM4 SOT467C

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