BLF645,112
  • Share:

Ampleon USA Inc. BLF645,112

Manufacturer No:
BLF645,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 65V 16DB SOT540A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF645,112 is a 100 W LDMOS RF power push-pull transistor manufactured by Ampleon USA Inc. This transistor is designed for broadcast transmitter and industrial applications, offering excellent ruggedness and broadband performance. It is suitable for a wide frequency range from HF to 1400 MHz, making it ideal for various digital applications.

Key Specifications

ParameterValue
Frequency RangeHF to 1400 MHz
Output Power100 W
Gain18 dB
ProcessLDMOS
Drain Voltage (VDS)32 V
Current Rating32 A
VSWR (Voltage Standing Wave Ratio)Up to 10:1

Key Features

  • High output power of 100 W, making it suitable for high-power applications.
  • Wide frequency range from HF to 1400 MHz, providing versatility in various applications.
  • Excellent ruggedness, capable of withstanding a load mismatch corresponding to VSWR = 10:1 through all phases.
  • Broadband performance, ideal for digital applications.
  • LDMOS technology for high efficiency and reliability.

Applications

  • Broadcast transmitters: Suitable for high-power broadcast applications due to its high output power and ruggedness.
  • Industrial applications: Used in various industrial settings requiring high-power RF signals.
  • Digital applications: Ideal for digital modulation schemes due to its broadband performance.

Q & A

  1. What is the output power of the BLF645,112 transistor?
    The output power of the BLF645,112 transistor is 100 W.
  2. What is the frequency range of the BLF645,112 transistor?
    The frequency range is from HF to 1400 MHz.
  3. What type of process is used in the BLF645,112 transistor?
    The transistor uses LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology.
  4. What is the drain voltage (VDS) of the BLF645,112 transistor?
    The drain voltage (VDS) is 32 V.
  5. Can the BLF645,112 withstand load mismatches?
    Yes, it can withstand a load mismatch corresponding to VSWR = 10:1 through all phases.
  6. What are the typical applications of the BLF645,112 transistor?
    It is used in broadcast transmitters, industrial applications, and digital applications.
  7. What is the current rating of the BLF645,112 transistor?
    The current rating is 32 A.
  8. What is the gain of the BLF645,112 transistor?
    The gain is 18 dB.
  9. Why is LDMOS technology used in the BLF645,112 transistor?
    LDMOS technology is used for its high efficiency and reliability.
  10. Is the BLF645,112 suitable for digital modulation schemes?
    Yes, it is ideal for digital applications due to its broadband performance.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:1.3GHz
Gain:16.5dB
Voltage - Test:32 V
Current Rating (Amps):32A
Noise Figure:- 
Current - Test:900 mA
Power - Output:100W
Voltage - Rated:65 V
Package / Case:SOT-540A
Supplier Device Package:LDMOST
0 Remaining View Similar

In Stock

$183.33
2

Please send RFQ , we will respond immediately.

Similar Products

Part Number BLF645,112 BLF647,112 BLF245,112 BLF642,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Active Obsolete Obsolete Active
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source N-Channel LDMOS
Frequency 1.3GHz 600MHz 175MHz 1.3GHz
Gain 16.5dB 14.5dB 15.5dB 19dB
Voltage - Test 32 V 28 V 28 V 32 V
Current Rating (Amps) 32A 18A 6A -
Noise Figure - - 2dB -
Current - Test 900 mA - 50 mA 200 mA
Power - Output 100W 120W 30W 35W
Voltage - Rated 65 V 65 V 65 V 65 V
Package / Case SOT-540A SOT-540A SOT-123A SOT-467C
Supplier Device Package LDMOST LDMOST CRFM4 SOT467C

Related Product By Categories

BLF645,112
BLF645,112
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT540A
BLF7G24LS-140,118
BLF7G24LS-140,118
NXP USA Inc.
N-CHANNEL, MOSFET
BLF6G10LS-135R,112
BLF6G10LS-135R,112
NXP USA Inc.
RF TRANSISTOR
BLF8G10LS-160,118
BLF8G10LS-160,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.7DB SOT502B
PD55015STR-E
PD55015STR-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BLF7G27LS-100,112
BLF7G27LS-100,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
CLF1G0035-100H
CLF1G0035-100H
Ampleon USA Inc.
CLF1G0035-100 - 100W BROADBAND R
MRF300AN-27MHZ
MRF300AN-27MHZ
NXP USA Inc.
MRF300AN REF BRD 27MHZ 330W
BLF404,115
BLF404,115
Ampleon USA Inc.
RF FET NCHA 40V 11.5DB SOT409A
BF992,215
BF992,215
NXP USA Inc.
MOSFET NCH DUAL GATE 20V SOT143B
MRF6V2010NR1
MRF6V2010NR1
NXP USA Inc.
FET RF 110V 220MHZ TO270-2
BLF7G20LS-90PH
BLF7G20LS-90PH
Ampleon USA Inc.
RF FET LDMOS 90W CDFM4

Related Product By Brand

BLF183XRU
BLF183XRU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121A
BLF178XR,112
BLF178XR,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 50V SOT539A
BLF884P,112
BLF884P,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT1121A
BLF7G20LS-200,118
BLF7G20LS-200,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
CLF1G0035-50
CLF1G0035-50
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
CLF1G0035-100H
CLF1G0035-100H
Ampleon USA Inc.
CLF1G0035-100 - 100W BROADBAND R
BLF6G21-10G,112
BLF6G21-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BLF888,112
BLF888,112
Ampleon USA Inc.
RF FET LDMOS 104V 19DB SOT979A
BLF6G38-25,112
BLF6G38-25,112
Ampleon USA Inc.
RF FET LDMOS 65V 15DB SOT608A
BLF6G10S-45,112
BLF6G10S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B
BLF7G24LS-140
BLF7G24LS-140
Ampleon USA Inc.
RF FET LDMOS 140W SOT502B
BLF7G10LS-250
BLF7G10LS-250
Ampleon USA Inc.
RF FET LDMOS 250W SOT502B