BLF888DU
  • Share:

Ampleon USA Inc. BLF888DU

Manufacturer No:
BLF888DU
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 104V 21DB SOT539A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF888DU is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) RF power transistor manufactured by Ampleon USA Inc. This device is designed to operate at high frequencies, making it suitable for various RF power applications. The BLF888DU is known for its high gain, efficiency, and reliability, which are critical in modern RF systems.

Key Specifications

ParameterValue
ManufacturerAmpleon USA Inc.
Transistor TypeLDMOS
Frequency860 MHz
Gain21 dB
Voltage - Test50 V

Key Features

  • High gain of 21 dB, ensuring strong signal amplification.
  • Operates at a frequency of 860 MHz, suitable for various RF applications.
  • LDMOS technology for high efficiency and reliability.
  • High voltage rating of 50 V, allowing for robust performance in demanding environments.

Applications

The BLF888DU is widely used in RF power amplifiers for various applications, including:

  • Broadcast transmitters
  • Industrial heating and medical equipment
  • Radar systems
  • Wireless communication infrastructure

Q & A

  1. What is the BLF888DU transistor type?
    The BLF888DU is an LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor.
  2. What is the operating frequency of the BLF888DU?
    The operating frequency of the BLF888DU is 860 MHz.
  3. What is the gain of the BLF888DU?
    The gain of the BLF888DU is 21 dB.
  4. What is the test voltage for the BLF888DU?
    The test voltage for the BLF888DU is 50 V.
  5. Who is the manufacturer of the BLF888DU?
    The BLF888DU is manufactured by Ampleon USA Inc.
  6. What are some common applications of the BLF888DU?
    The BLF888DU is used in broadcast transmitters, industrial heating and medical equipment, radar systems, and wireless communication infrastructure.
  7. Why is LDMOS technology used in the BLF888DU?
    LDMOS technology is used for its high efficiency and reliability in RF power applications.
  8. Where can I purchase the BLF888DU?
    The BLF888DU can be purchased from various electronic component distributors such as Digi-Key, Verical, and DigiPart.
  9. What are the benefits of using the BLF888DU in RF power amplifiers?
    The BLF888DU offers high gain, efficiency, and reliability, making it a robust choice for RF power amplifiers.
  10. Is the BLF888DU suitable for high-power applications?
    Yes, the BLF888DU is designed to handle high-power applications due to its high voltage rating and efficient LDMOS technology.

Product Attributes

Transistor Type:LDMOS
Frequency:860MHz
Gain:21dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:1.3 A
Power - Output:250W
Voltage - Rated:104 V
Package / Case:SOT-539A
Supplier Device Package:SOT539A
0 Remaining View Similar

In Stock

$252.05
2

Please send RFQ , we will respond immediately.

Same Series
BLF888DU
BLF888DU
RF FET LDMOS 104V 21DB SOT539A

Similar Products

Part Number BLF888DU BLF888EU BLF888DSU
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Not For New Designs Active Not For New Designs
Transistor Type LDMOS LDMOS (Dual), Common Source LDMOS
Frequency 860MHz 600MHz ~ 700MHz 860MHz
Gain 21dB 17dB 21dB
Voltage - Test 50 V 50 V 50 V
Current Rating (Amps) - - -
Noise Figure - - -
Current - Test 1.3 A 600 mA 1.3 A
Power - Output 250W 750W 250W
Voltage - Rated 104 V 104 V 104 V
Package / Case SOT-539A SOT-539A SOT-539B
Supplier Device Package SOT539A SOT539A SOT539B

Related Product By Categories

BLF183XRU
BLF183XRU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121A
BLF888EU
BLF888EU
Ampleon USA Inc.
RF FET LDMOS 104V 17DB SOT539A
MRFE6VS25GNR1
MRFE6VS25GNR1
NXP USA Inc.
RF MOSFET LDMOS 50V TO270-2 GULL
PD55025-E
PD55025-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
BLF8G10LS-160,112
BLF8G10LS-160,112
NXP USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
BLF8G20LS-220J
BLF8G20LS-220J
Ampleon USA Inc.
RF FET LDMOS 65V 18.9DB SOT502B
BLF8G09LS-270GWJ
BLF8G09LS-270GWJ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
BLF7G27LS-100,118
BLF7G27LS-100,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BF998E6327
BF998E6327
Infineon Technologies
BF998 - RF SMALL SIGNAL TRANSIST
BF1212WR,115
BF1212WR,115
NXP USA Inc.
MOSFET N-CH DUAL GATE 6V SOT343R
MMBF4416LT1G
MMBF4416LT1G
onsemi
JFET N-CH 30V 15MA SOT23
MMBF5485_NB50012
MMBF5485_NB50012
onsemi
IC POWER MANAGEMENT

Related Product By Brand

BLF3G21-30
BLF3G21-30
Ampleon USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
BLF647P,112
BLF647P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121A
BLF6G10LS-200RN,11
BLF6G10LS-200RN,11
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT502B
BLF7G24LS-140,112
BLF7G24LS-140,112
Ampleon USA Inc.
RF MOSFET LDMOS 28V SOT502B
BLF8G20LS-220J
BLF8G20LS-220J
Ampleon USA Inc.
RF FET LDMOS 65V 18.9DB SOT502B
BLF6G10-45,135
BLF6G10-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 22.5DB SOT608A
BLF404,115
BLF404,115
Ampleon USA Inc.
RF FET NCHA 40V 11.5DB SOT409A
BLF6G27-10G,118
BLF6G27-10G,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF6G38LS-50,112
BLF6G38LS-50,112
Ampleon USA Inc.
RF FET LDMOS 65V 14DB SOT502B
BLF6G22LS-130,118
BLF6G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BLF7G21LS-160P,112
BLF7G21LS-160P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121B
BLF7G15LS-300P,118
BLF7G15LS-300P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B