BLF888EU
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Ampleon USA Inc. BLF888EU

Manufacturer No:
BLF888EU
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 104V 17DB SOT539A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF888EU is a high-power RF LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by Ampleon USA Inc. This device is optimized for high-performance applications in the UHF frequency band, particularly in broadcast transmitter and industrial settings. The BLF888EU is known for its robust design, high efficiency, and excellent ruggedness, making it suitable for demanding RF power applications.

Key Specifications

Parameter Conditions Min Max Unit
f range Frequency range 470 860 MHz
P L(1dB) Nominal output power at 1 dB gain compression - 500 - W
G p Power gain V DS = 50 V 18 19 dB
η D Drain efficiency V DS = 50 V; f = 860 MHz; I Dq = 1.3 A 42 46 %
P L(AV) Average output power - 110 - W
P L(PEP) Peak envelope power - 500 - W
IMD3 Third-order intermodulation distortion V DS = 50 V; I Dq = 1.3 A -32 -28 dBc
V DS Drain-source voltage - 50 - V
I Dq Quiescent drain current - 1.3 - A

Key Features

  • High Power Output: The BLF888EU can deliver up to 500 W of peak envelope power and 110 W of average output power over the full UHF band from 470 MHz to 860 MHz.
  • High Efficiency: The device offers a drain efficiency of up to 46% at 860 MHz, ensuring high performance with minimal energy loss.
  • Excellent Ruggedness: Designed for robust operation, the BLF888EU features excellent ruggedness, making it ideal for demanding RF power applications.
  • Advanced Thermal Management: The transistor includes advanced flange material for optimum thermal behavior and reliability.
  • Internal Input Matching: Optimized for high gain and broadband operation with internal input matching.
  • ESD Protection: Integrated ESD protection enhances the device's reliability and durability.
  • Compliance with Regulations: Compliant with Directive 2002/95/EC regarding the Restriction of Hazardous Substances (RoHS).

Applications

  • Communication Transmitter Applications: Suitable for UHF band communication transmitter applications.
  • Industrial Applications: Used in various industrial applications within the UHF frequency band.
  • Broadcast Transmitter Applications: Optimized for digital broadcast transmitter applications, including DVB-T.

Q & A

  1. What is the frequency range of the BLF888EU?

    The BLF888EU operates over the UHF frequency band from 470 MHz to 860 MHz.

  2. What is the maximum output power of the BLF888EU?

    The device can deliver up to 500 W of peak envelope power.

  3. What is the typical drain efficiency of the BLF888EU?

    The typical drain efficiency is up to 46% at 860 MHz.

  4. Does the BLF888EU have integrated ESD protection?
  5. What type of thermal management does the BLF888EU feature?

    The device features advanced flange material for optimum thermal behavior and reliability.

  6. Is the BLF888EU compliant with RoHS regulations?
  7. What are the typical applications of the BLF888EU?

    The BLF888EU is used in communication transmitter applications, industrial applications, and broadcast transmitter applications within the UHF band.

  8. What is the quiescent drain current of the BLF888EU?

    The quiescent drain current is typically 1.3 A.

  9. Does the BLF888EU have internal input matching?
  10. What is the status of the BLF888EU product?

    The BLF888EU has been discontinued. For more information, refer to the discontinuation notice.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:600MHz ~ 700MHz
Gain:17dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:600 mA
Power - Output:750W
Voltage - Rated:104 V
Package / Case:SOT-539A
Supplier Device Package:SOT539A
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$293.66
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Same Series
BLF888ESU
BLF888ESU
RF FET LDMOS 104V 17DB SOT539B

Similar Products

Part Number BLF888EU BLF888DU BLF888ESU
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Active Not For New Designs Active
Transistor Type LDMOS (Dual), Common Source LDMOS LDMOS (Dual), Common Source
Frequency 600MHz ~ 700MHz 860MHz 600MHz ~ 700MHz
Gain 17dB 21dB 17dB
Voltage - Test 50 V 50 V 50 V
Current Rating (Amps) - - -
Noise Figure - - -
Current - Test 600 mA 1.3 A 600 mA
Power - Output 750W 250W 750W
Voltage - Rated 104 V 104 V 104 V
Package / Case SOT-539A SOT-539A SOT-539B
Supplier Device Package SOT539A SOT539A SOT539B

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