BLF881,112
  • Share:

Ampleon USA Inc. BLF881,112

Manufacturer No:
BLF881,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 104V 21DB SOT467C
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF881,112 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) RF power transistor manufactured by Ampleon USA Inc. This device is specifically designed for broadcast transmitter and industrial applications, offering robust performance across a wide frequency range. It is capable of delivering up to 140 W of output power from HF to 1 GHz, making it an ideal choice for various high-power RF applications.

Key Specifications

ParameterValue
ManufacturerAmpleon USA Inc.
Part NumberBLF881,112
Transistor TypeLDMOS (Laterally Diffused Metal Oxide Semiconductor)
Package / CaseSOT-467C
Frequency RangeHF to 1 GHz
Output Power140 W
Gain21 dB
Current - Test500 mA
Voltage - Rated104 V
Mounting TypeChassis Mount

Key Features

  • High output power of up to 140 W.
  • Wide frequency range from HF to 1 GHz.
  • High gain of 21 dB.
  • Rugged and broadband performance, suitable for digital applications.
  • LDMOS technology for high efficiency and reliability.
  • Chassis mount package for robust mechanical stability.

Applications

  • Broadcast transmitter applications.
  • Industrial RF applications.
  • High-power RF amplifiers.
  • Digital transmission systems.

Q & A

  1. What is the output power of the BLF881,112? The BLF881,112 can deliver up to 140 W of output power.
  2. What is the frequency range of the BLF881,112? The frequency range is from HF to 1 GHz.
  3. What type of transistor is the BLF881,112? It is an LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor.
  4. What is the gain of the BLF881,112? The gain is 21 dB.
  5. What is the rated voltage of the BLF881,112? The rated voltage is 104 V.
  6. What is the mounting type of the BLF881,112? It is a chassis mount.
  7. What are the typical applications of the BLF881,112? Typical applications include broadcast transmitter and industrial RF applications.
  8. What is the package type of the BLF881,112? The package type is SOT-467C.
  9. How much current does the BLF881,112 draw during testing? The current during testing is 500 mA.
  10. Is the BLF881,112 suitable for digital transmission systems? Yes, it is suitable for digital transmission systems due to its rugged and broadband performance.

Product Attributes

Transistor Type:LDMOS
Frequency:860MHz
Gain:21dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:500 mA
Power - Output:140W
Voltage - Rated:104 V
Package / Case:SOT-467C
Supplier Device Package:SOT467C
0 Remaining View Similar

In Stock

$105.30
6

Please send RFQ , we will respond immediately.

Same Series
BLF881,112
BLF881,112
RF FET LDMOS 104V 21DB SOT467C

Similar Products

Part Number BLF881,112 BLF881S,112 BLF888,112 BLF871,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Active Active Obsolete Obsolete
Transistor Type LDMOS LDMOS LDMOS (Dual), Common Source LDMOS
Frequency 860MHz 860MHz 860MHz 860MHz
Gain 21dB 21dB 19dB 19dB
Voltage - Test 50 V 50 V 50 V 40 V
Current Rating (Amps) - - - -
Noise Figure - - - -
Current - Test 500 mA 500 mA 1.3 A 500 mA
Power - Output 140W 140W 250W 100W
Voltage - Rated 104 V 104 V 104 V 89 V
Package / Case SOT-467C SOT-467B SOT-979A SOT-467C
Supplier Device Package SOT467C SOT-467B CDFM2 SOT467C

Related Product By Categories

BLF574,112
BLF574,112
Ampleon USA Inc.
RF FET LDMOS 110V 26.5DB SOT539A
BLF888EU
BLF888EU
Ampleon USA Inc.
RF FET LDMOS 104V 17DB SOT539A
AFT09MS007NT1
AFT09MS007NT1
NXP USA Inc.
FET RF 30V 870MHZ PLD1.5W
PD55015TR-E
PD55015TR-E
STMicroelectronics
TRANS RF N-CH FET POWERSO-10RF
PD55003L-E
PD55003L-E
STMicroelectronics
TRANSISTOR RF 5X5 POWERFLAT
NE5550979A-T1-A
NE5550979A-T1-A
Renesas Electronics America Inc
RF N-CHANNEL POWER MOSFET
MRFE6VP5150NR1
MRFE6VP5150NR1
NXP USA Inc.
RF MOSFET LDMOS DL 50V TO270
BF909R,215
BF909R,215
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143
BLF6G10LS-260PRN,1
BLF6G10LS-260PRN,1
Ampleon USA Inc.
RF FET LDMOS 65V 22DB SOT539B
BLF878,112
BLF878,112
Ampleon USA Inc.
RF FET LDMOS 89V 21DB SOT979A
BLF6G20S-45,118
BLF6G20S-45,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
BLF8G22LS-160BVX
BLF8G22LS-160BVX
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1244B

Related Product By Brand

BLF188XRGJ
BLF188XRGJ
Ampleon USA Inc.
RF FET LDMOS 135V 24DB SOT1248C
BLF574,112
BLF574,112
Ampleon USA Inc.
RF FET LDMOS 110V 26.5DB SOT539A
CLF1G0035-50
CLF1G0035-50
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
BLF888DU
BLF888DU
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
BLF7G24LS-140,112
BLF7G24LS-140,112
Ampleon USA Inc.
RF MOSFET LDMOS 28V SOT502B
BLF8G09LS-270GWJ
BLF8G09LS-270GWJ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
BLS6G3135S-120,112
BLS6G3135S-120,112
Ampleon USA Inc.
RF FET LDMOS 60V 11DB SOT502B
BLF7G22LS-130,112
BLF7G22LS-130,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF6G10LS-135RN:11
BLF6G10LS-135RN:11
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BLF7G20LS-250P,112
BLF7G20LS-250P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF640U
BLF640U
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BLF7G24LS-140
BLF7G24LS-140
Ampleon USA Inc.
RF FET LDMOS 140W SOT502B