BLF881,112
  • Share:

Ampleon USA Inc. BLF881,112

Manufacturer No:
BLF881,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 104V 21DB SOT467C
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF881,112 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) RF power transistor manufactured by Ampleon USA Inc. This device is specifically designed for broadcast transmitter and industrial applications, offering robust performance across a wide frequency range. It is capable of delivering up to 140 W of output power from HF to 1 GHz, making it an ideal choice for various high-power RF applications.

Key Specifications

ParameterValue
ManufacturerAmpleon USA Inc.
Part NumberBLF881,112
Transistor TypeLDMOS (Laterally Diffused Metal Oxide Semiconductor)
Package / CaseSOT-467C
Frequency RangeHF to 1 GHz
Output Power140 W
Gain21 dB
Current - Test500 mA
Voltage - Rated104 V
Mounting TypeChassis Mount

Key Features

  • High output power of up to 140 W.
  • Wide frequency range from HF to 1 GHz.
  • High gain of 21 dB.
  • Rugged and broadband performance, suitable for digital applications.
  • LDMOS technology for high efficiency and reliability.
  • Chassis mount package for robust mechanical stability.

Applications

  • Broadcast transmitter applications.
  • Industrial RF applications.
  • High-power RF amplifiers.
  • Digital transmission systems.

Q & A

  1. What is the output power of the BLF881,112? The BLF881,112 can deliver up to 140 W of output power.
  2. What is the frequency range of the BLF881,112? The frequency range is from HF to 1 GHz.
  3. What type of transistor is the BLF881,112? It is an LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor.
  4. What is the gain of the BLF881,112? The gain is 21 dB.
  5. What is the rated voltage of the BLF881,112? The rated voltage is 104 V.
  6. What is the mounting type of the BLF881,112? It is a chassis mount.
  7. What are the typical applications of the BLF881,112? Typical applications include broadcast transmitter and industrial RF applications.
  8. What is the package type of the BLF881,112? The package type is SOT-467C.
  9. How much current does the BLF881,112 draw during testing? The current during testing is 500 mA.
  10. Is the BLF881,112 suitable for digital transmission systems? Yes, it is suitable for digital transmission systems due to its rugged and broadband performance.

Product Attributes

Transistor Type:LDMOS
Frequency:860MHz
Gain:21dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:500 mA
Power - Output:140W
Voltage - Rated:104 V
Package / Case:SOT-467C
Supplier Device Package:SOT467C
0 Remaining View Similar

In Stock

$105.30
6

Please send RFQ , we will respond immediately.

Same Series
BLF881S,112
BLF881S,112
RF MOSFET LDMOS 50V LDMOST

Similar Products

Part Number BLF881,112 BLF881S,112 BLF888,112 BLF871,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Active Active Obsolete Obsolete
Transistor Type LDMOS LDMOS LDMOS (Dual), Common Source LDMOS
Frequency 860MHz 860MHz 860MHz 860MHz
Gain 21dB 21dB 19dB 19dB
Voltage - Test 50 V 50 V 50 V 40 V
Current Rating (Amps) - - - -
Noise Figure - - - -
Current - Test 500 mA 500 mA 1.3 A 500 mA
Power - Output 140W 140W 250W 100W
Voltage - Rated 104 V 104 V 104 V 89 V
Package / Case SOT-467C SOT-467B SOT-979A SOT-467C
Supplier Device Package SOT467C SOT-467B CDFM2 SOT467C

Related Product By Categories

AFT05MS031NR1
AFT05MS031NR1
NXP USA Inc.
FET RF 40V 520MHZ TO-270-2
MW7IC2020NT1
MW7IC2020NT1
NXP USA Inc.
RF MOSFET LDMOS 28V 24PQFN
BLF245B
BLF245B
Rochester Electronics, LLC
BLF245B - VHF PUSH-PULL POWER VD
BLF6G10LS-135R,112
BLF6G10LS-135R,112
NXP USA Inc.
RF TRANSISTOR
PD55015TR-E
PD55015TR-E
STMicroelectronics
TRANS RF N-CH FET POWERSO-10RF
BF909AR215
BF909AR215
NXP USA Inc.
MOSFET N-CH SOT-143R
BLF8G22LS-140J
BLF8G22LS-140J
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BF998E6327
BF998E6327
Infineon Technologies
BF998 - RF SMALL SIGNAL TRANSIST
A3G35H100-04SR3
A3G35H100-04SR3
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR
BF904R,235
BF904R,235
NXP USA Inc.
MOSFET N-CH 7V 30MA SOT143
BLF878,112
BLF878,112
Ampleon USA Inc.
RF FET LDMOS 89V 21DB SOT979A
MRF6V2010NR1
MRF6V2010NR1
NXP USA Inc.
FET RF 110V 220MHZ TO270-2

Related Product By Brand

MX0912B351Y,114
MX0912B351Y,114
Ampleon USA Inc.
RF TRANS NPN 20V 1.215GHZ CDFM2
BLF184XRU
BLF184XRU
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214A
BLF884P,112
BLF884P,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT1121A
BLF7G20LS-200,118
BLF7G20LS-200,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF6G27LS-40P,112
BLF6G27LS-40P,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 28V LDMOST
BLF184XRSU
BLF184XRSU
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214B
BLF7G24LS-100,118
BLF7G24LS-100,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF6G38LS-50,118
BLF6G38LS-50,118
Ampleon USA Inc.
RF FET LDMOS 65V 14DB SOT502B
BLF6G20LS-110,118
BLF6G20LS-110,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT502B
BLF6G20S-45,118
BLF6G20S-45,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
BLF6G10S-45K,112
BLF6G10S-45K,112
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B
BLM6G22-30G,135
BLM6G22-30G,135
Ampleon USA Inc.
IC AMP W-CDMA 2.11-2.17GHZ 16HSO