BLF7G10LS-250,112
  • Share:

NXP USA Inc. BLF7G10LS-250,112

Manufacturer No:
BLF7G10LS-250,112
Manufacturer:
NXP USA Inc.
Package:
Tube
Description:
N-CHANNEL, MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF7G10LS-250,112 is a high-performance RF power LDMOS transistor manufactured by NXP USA Inc. This component is designed for use in high-power RF applications, particularly in the frequency range of 869MHz to 960MHz. It is known for its high output power, reliability, and efficiency, making it a preferred choice for various RF systems.

Key Specifications

ParameterValue
TechnologyLDMOS
Frequency Range869MHz ~ 960MHz
Gain19.5dB
Voltage - Test30 V
Current - Test1.8 A
Power - Output250W
Voltage - Rated65 V
Mounting TypeSOT502B

Key Features

  • High output power of 250W, making it suitable for high-power RF applications.
  • High gain of 19.5dB, enhancing signal strength and efficiency.
  • Operates within the frequency range of 869MHz to 960MHz, ideal for various RF systems.
  • LDMOS technology ensures high reliability and durability.
  • Rated voltage of 65V and test current of 1.8A, providing robust performance.

Applications

The BLF7G10LS-250,112 is widely used in various high-power RF applications, including:

  • Base stations for cellular networks.
  • RF amplifiers in broadcasting and communication systems.
  • Industrial and medical RF equipment.
  • Aerospace and defense systems requiring high-power RF components.

Q & A

  1. What is the frequency range of the BLF7G10LS-250,112?
    The frequency range is 869MHz to 960MHz.
  2. What is the output power of this transistor?
    The output power is 250W.
  3. What technology is used in this transistor?
    The transistor uses LDMOS technology.
  4. What is the gain of the BLF7G10LS-250,112?
    The gain is 19.5dB.
  5. What is the rated voltage of this component?
    The rated voltage is 65V.
  6. What is the test current for this transistor?
    The test current is 1.8A.
  7. In what package is the BLF7G10LS-250,112 available?
    The component is available in the SOT502B package.
  8. What are some common applications of the BLF7G10LS-250,112?
    Common applications include base stations, RF amplifiers, industrial and medical RF equipment, and aerospace and defense systems.
  9. Who is the manufacturer of the BLF7G10LS-250,112?
    The manufacturer is NXP USA Inc.
  10. Where can I purchase the BLF7G10LS-250,112?
    You can purchase it from distributors like Digi-Key, Lisleapex, and other authorized suppliers.

Product Attributes

Transistor Type:LDMOS
Frequency:869MHz ~ 960MHz
Gain:19.5dB
Voltage - Test:30 V
Current Rating (Amps):5µA
Noise Figure:- 
Current - Test:1.8 A
Power - Output:250W
Voltage - Rated:65 V
Package / Case:SOT-502B
Supplier Device Package:SOT502B
0 Remaining View Similar

In Stock

$102.89
4

Please send RFQ , we will respond immediately.

Same Series
BLF7G10L-250,112
BLF7G10L-250,112
RF PFET, 1-ELEMENT, ULTRA HIGH F
BLF7G10LS-250,112
BLF7G10LS-250,112
N-CHANNEL, MOSFET
BLF7G10L-250,118
BLF7G10L-250,118
RF FET LDMOS 65V 19.5DB SOT502A

Similar Products

Part Number BLF7G10LS-250,112 BLF7G10LS-250,118 BLF7G10L-250,112
Manufacturer NXP USA Inc. Ampleon USA Inc. NXP USA Inc.
Product Status Active Last Time Buy Active
Transistor Type LDMOS LDMOS LDMOS
Frequency 869MHz ~ 960MHz 920MHz ~ 960MHz 920MHz ~ 960MHz
Gain 19.5dB 19.5dB 19.5dB
Voltage - Test 30 V 30 V 30 V
Current Rating (Amps) 5µA - -
Noise Figure - - -
Current - Test 1.8 A 1.8 A 1.8 A
Power - Output 250W 60W 60W
Voltage - Rated 65 V 65 V 65 V
Package / Case SOT-502B SOT-502B SOT-502A
Supplier Device Package SOT502B SOT502B LDMOST

Related Product By Categories

BLF645,112
BLF645,112
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT540A
BLF647PS,112
BLF647PS,112
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
BLF184XRGQ
BLF184XRGQ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
BLF888B,112
BLF888B,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
A2I25D025GNR1
A2I25D025GNR1
NXP USA Inc.
IC TRANS RF LDMOS
BLF578XR,112
BLF578XR,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 50V SOT539A
BLF184XRSU
BLF184XRSU
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214B
BF545A,215
BF545A,215
NXP USA Inc.
JFET N-CH 30V 6.5MA SOT23
BLF6G27-10G,112
BLF6G27-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BF511,215
BF511,215
NXP USA Inc.
JFET N-CH 20V 30MA SOT23
BLF6G20S-45,112
BLF6G20S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
BLF6G27LS-75,118
BLF6G27LS-75,118
Ampleon USA Inc.
RF FET LDMOS 65V SOT502B

Related Product By Brand

PMEG2005EGW115
PMEG2005EGW115
NXP USA Inc.
NOW NEXPERIA PMEG2005EGW RECTIFI
Z0103MA0,412
Z0103MA0,412
NXP USA Inc.
NOW WEEN - Z0103MA0 - 4 QUADRANT
MIMXRT1011CAE4A
MIMXRT1011CAE4A
NXP USA Inc.
IC MCU 32BIT EXT MEM 80FQFP
MC912DG128ACPVE
MC912DG128ACPVE
NXP USA Inc.
IC MCU 16BIT 128KB FLASH 112LQFP
LPC1315FBD48,551
LPC1315FBD48,551
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 48LQFP
S9S12G192F0VLHR
S9S12G192F0VLHR
NXP USA Inc.
IC MCU 16BIT 192KB FLASH 64LQFP
SPC5745CBK1AMMJ6
SPC5745CBK1AMMJ6
NXP USA Inc.
IC MCU 32BIT 2MB FLSH 256MAPPBGA
MIMX8MQ6DVAJZAA,557
MIMX8MQ6DVAJZAA,557
NXP USA Inc.
I.MX 8M: ARM CORTEX A53 QUAD COR
74AHC1G126GW/C4125
74AHC1G126GW/C4125
NXP USA Inc.
BUS DRIVER, AHC/VHC/H/U/V SERIES
BZV55-C20135
BZV55-C20135
NXP USA Inc.
NOW NEXPERIA BZV55-C20 - ZENER D
SA614AD,602
SA614AD,602
NXP USA Inc.
IC FM IF SYSTEM LOW PWR 16-SOIC
MPX5010GP
MPX5010GP
NXP USA Inc.
SENSOR GAUGE PRESS 1.45 PSI MAX