BLF7G10LS-250,112
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NXP USA Inc. BLF7G10LS-250,112

Manufacturer No:
BLF7G10LS-250,112
Manufacturer:
NXP USA Inc.
Package:
Tube
Description:
N-CHANNEL, MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF7G10LS-250,112 is a high-performance RF power LDMOS transistor manufactured by NXP USA Inc. This component is designed for use in high-power RF applications, particularly in the frequency range of 869MHz to 960MHz. It is known for its high output power, reliability, and efficiency, making it a preferred choice for various RF systems.

Key Specifications

ParameterValue
TechnologyLDMOS
Frequency Range869MHz ~ 960MHz
Gain19.5dB
Voltage - Test30 V
Current - Test1.8 A
Power - Output250W
Voltage - Rated65 V
Mounting TypeSOT502B

Key Features

  • High output power of 250W, making it suitable for high-power RF applications.
  • High gain of 19.5dB, enhancing signal strength and efficiency.
  • Operates within the frequency range of 869MHz to 960MHz, ideal for various RF systems.
  • LDMOS technology ensures high reliability and durability.
  • Rated voltage of 65V and test current of 1.8A, providing robust performance.

Applications

The BLF7G10LS-250,112 is widely used in various high-power RF applications, including:

  • Base stations for cellular networks.
  • RF amplifiers in broadcasting and communication systems.
  • Industrial and medical RF equipment.
  • Aerospace and defense systems requiring high-power RF components.

Q & A

  1. What is the frequency range of the BLF7G10LS-250,112?
    The frequency range is 869MHz to 960MHz.
  2. What is the output power of this transistor?
    The output power is 250W.
  3. What technology is used in this transistor?
    The transistor uses LDMOS technology.
  4. What is the gain of the BLF7G10LS-250,112?
    The gain is 19.5dB.
  5. What is the rated voltage of this component?
    The rated voltage is 65V.
  6. What is the test current for this transistor?
    The test current is 1.8A.
  7. In what package is the BLF7G10LS-250,112 available?
    The component is available in the SOT502B package.
  8. What are some common applications of the BLF7G10LS-250,112?
    Common applications include base stations, RF amplifiers, industrial and medical RF equipment, and aerospace and defense systems.
  9. Who is the manufacturer of the BLF7G10LS-250,112?
    The manufacturer is NXP USA Inc.
  10. Where can I purchase the BLF7G10LS-250,112?
    You can purchase it from distributors like Digi-Key, Lisleapex, and other authorized suppliers.

Product Attributes

Transistor Type:LDMOS
Frequency:869MHz ~ 960MHz
Gain:19.5dB
Voltage - Test:30 V
Current Rating (Amps):5µA
Noise Figure:- 
Current - Test:1.8 A
Power - Output:250W
Voltage - Rated:65 V
Package / Case:SOT-502B
Supplier Device Package:SOT502B
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Same Series
BLF7G10L-250,112
BLF7G10L-250,112
RF PFET, 1-ELEMENT, ULTRA HIGH F
BLF7G10LS-250,112
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N-CHANNEL, MOSFET
BLF7G10L-250,118
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RF FET LDMOS 65V 19.5DB SOT502A

Similar Products

Part Number BLF7G10LS-250,112 BLF7G10LS-250,118 BLF7G10L-250,112
Manufacturer NXP USA Inc. Ampleon USA Inc. NXP USA Inc.
Product Status Active Last Time Buy Active
Transistor Type LDMOS LDMOS LDMOS
Frequency 869MHz ~ 960MHz 920MHz ~ 960MHz 920MHz ~ 960MHz
Gain 19.5dB 19.5dB 19.5dB
Voltage - Test 30 V 30 V 30 V
Current Rating (Amps) 5µA - -
Noise Figure - - -
Current - Test 1.8 A 1.8 A 1.8 A
Power - Output 250W 60W 60W
Voltage - Rated 65 V 65 V 65 V
Package / Case SOT-502B SOT-502B SOT-502A
Supplier Device Package SOT502B SOT502B LDMOST

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