BLF6G21-10G,112
  • Share:

Ampleon USA Inc. BLF6G21-10G,112

Manufacturer No:
BLF6G21-10G,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 65V 18.5DB SOT538A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF6G21-10G,112 is a 10 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor manufactured by Ampleon USA Inc. This component is designed for base station applications and operates across a wide frequency range from HF to 2200 MHz. It is part of Ampleon's portfolio of RF power transistors, known for their high performance and reliability in wireless communication systems.

Key Specifications

ParameterValue
Power Output10 W
Voltage Rating65 V
Frequency RangeHF to 2200 MHz
Package TypeSOT538A
Gain18.5 dB

Key Features

  • High power output of 10 W, suitable for base station applications.
  • Wide frequency range from HF to 2200 MHz, making it versatile for various wireless communication systems.
  • Integrated ESD protection for enhanced reliability.
  • Easy power control due to its LDMOS technology.
  • Compact SOT538A package for efficient use of space.

Applications

The BLF6G21-10G,112 is primarily used in base station applications for wireless communication systems. It is suitable for a variety of frequencies, including those used in cellular networks, broadcast systems, and other RF power amplification needs.

Q & A

  1. What is the power output of the BLF6G21-10G,112? The power output is 10 W.
  2. What is the voltage rating of this transistor? The voltage rating is 65 V.
  3. What is the frequency range of the BLF6G21-10G,112? It operates from HF to 2200 MHz.
  4. What type of package does the BLF6G21-10G,112 use? It uses the SOT538A package.
  5. What is the gain of the BLF6G21-10G,112? The gain is 18.5 dB.
  6. Does the BLF6G21-10G,112 have integrated ESD protection? Yes, it does.
  7. What are the primary applications of the BLF6G21-10G,112? It is used in base station applications for wireless communication systems.
  8. Who manufactures the BLF6G21-10G,112? It is manufactured by Ampleon USA Inc.
  9. What technology is used in the BLF6G21-10G,112? It uses LDMOS technology.
  10. Where can I find detailed specifications for the BLF6G21-10G,112? Detailed specifications can be found on the official Ampleon website or through distributors like Digi-Key and Mouser.

Product Attributes

Transistor Type:LDMOS
Frequency:2.11GHz ~ 2.17GHz
Gain:18.5dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:100 mA
Power - Output:700mW
Voltage - Rated:65 V
Package / Case:SOT-538A
Supplier Device Package:2-CSMD
0 Remaining View Similar

In Stock

-
387

Please send RFQ , we will respond immediately.

Same Series
BLF6G21-10G,135
BLF6G21-10G,135
RF FET LDMOS 65V 18.5DB SOT538A

Similar Products

Part Number BLF6G21-10G,112 BLF6G27-10G,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Obsolete
Transistor Type LDMOS LDMOS
Frequency 2.11GHz ~ 2.17GHz 2.5GHz ~ 2.7GHz
Gain 18.5dB 19dB
Voltage - Test 28 V 28 V
Current Rating (Amps) - 3.5A
Noise Figure - -
Current - Test 100 mA 130 mA
Power - Output 700mW 2W
Voltage - Rated 65 V 65 V
Package / Case SOT-538A SOT-975C
Supplier Device Package 2-CSMD CDFM2

Related Product By Categories

AFT18H357-24NR6
AFT18H357-24NR6
Freescale Semiconductor
AIRFAST RF POWER LDMOS TRANSISTO
BLF6G10LS-200RN:11
BLF6G10LS-200RN:11
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT502B
CLF1G0060-10
CLF1G0060-10
Ampleon USA Inc.
CLF1G0060-10 - 10W BROADBAND RF
CLF1G0035-50
CLF1G0035-50
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
PD85035S-E
PD85035S-E
STMicroelectronics
FET RF 40V 870MHZ
BLF8G20LS-220J
BLF8G20LS-220J
Ampleon USA Inc.
RF FET LDMOS 65V 18.9DB SOT502B
A2V07H525-04NR6
A2V07H525-04NR6
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
BLF6G21-10G,112
BLF6G21-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BF998,215
BF998,215
NXP USA Inc.
MOSFET NCH DUAL GATE 12V SOT143B
BLF8G22LS-160BV:11
BLF8G22LS-160BV:11
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1120B
NE5550279A-T1-A
NE5550279A-T1-A
CEL
FET RF 30V 900MHZ 79A
A2T18H455W23NR6
A2T18H455W23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO

Related Product By Brand

BLF645,112
BLF645,112
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT540A
BLF184XRGQ
BLF184XRGQ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
BLF888DSU
BLF888DSU
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539B
BLF177R
BLF177R
Ampleon USA Inc.
HF/VHF POWER VDMOS TRANSISTOR (
BLF647PSJ
BLF647PSJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
BLF578XRS,112
BLF578XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 23.5DB SOT539B
BLF7G22LS-130,118
BLF7G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF6G21-10G,112
BLF6G21-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BLF404,115
BLF404,115
Ampleon USA Inc.
RF FET NCHA 40V 11.5DB SOT409A
BLF3G21-30,112
BLF3G21-30,112
Ampleon USA Inc.
RF FET LDMOS 65V 13.5DB SOT467C
BLF6G20LS-110,112
BLF6G20LS-110,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT502B
BLF8G22LS-160BV,11
BLF8G22LS-160BV,11
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1120B