BLA6H0912-500,112
  • Share:

Ampleon USA Inc. BLA6H0912-500,112

Manufacturer No:
BLA6H0912-500,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 100V 17DB SOT634A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLA6H0912-500,112 RF Power Transistor, manufactured by Ampleon USA Inc., is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor designed for various RF power applications. This transistor is part of Ampleon's extensive range of RF power transistors, known for their robust performance and reliability.

Key Specifications

ParameterValue
Frequency Range0.96 to 1.2 GHz
Output Power500 W
Gain17 dB
Voltage50 V
TechnologyLDMOS
Package TypeSOT-634A
Current Rating54 A
Voltage Rating100 V

Key Features

  • High output power of 500 W, making it suitable for high-power RF applications.
  • Operates within the frequency range of 0.96 to 1.2 GHz, which is ideal for various communication and industrial systems.
  • High gain of 17 dB, ensuring efficient amplification of RF signals.
  • LDMOS technology provides excellent ruggedness and broadband performance.
  • Package type SOT-634A, which is compact and suitable for a variety of board designs.

Applications

The BLA6H0912-500,112 RF Power Transistor is designed for use in several high-power RF applications, including:

  • Broadcast transmitters
  • Industrial heating and plasma generation
  • Medical equipment, such as MRI and RF ablation systems
  • Telecommunication systems, including base stations and repeaters
  • Radar and defense systems

Q & A

  1. What is the frequency range of the BLA6H0912-500,112 RF Power Transistor?
    The frequency range is 0.96 to 1.2 GHz.
  2. What is the output power of this transistor?
    The output power is 500 W.
  3. What is the gain of the BLA6H0912-500,112?
    The gain is 17 dB.
  4. What technology is used in this transistor?
    This transistor uses LDMOS technology.
  5. What is the package type of the BLA6H0912-500,112?
    The package type is SOT-634A.
  6. What are the voltage and current ratings of this transistor?
    The voltage rating is 100 V, and the current rating is 54 A.
  7. In which applications is the BLA6H0912-500,112 commonly used?
    It is commonly used in broadcast transmitters, industrial heating, medical equipment, telecommunication systems, and radar and defense systems.
  8. Why is LDMOS technology beneficial in RF power transistors?
    LDMOS technology provides excellent ruggedness and broadband performance, making it ideal for high-power RF applications.
  9. Where can I find detailed specifications and datasheets for the BLA6H0912-500,112?
    Detailed specifications and datasheets can be found on the official Ampleon website, as well as on distributor websites such as Digi-Key and RFMW.
  10. What is the significance of the 17 dB gain in this transistor?
    The 17 dB gain ensures efficient amplification of RF signals, which is crucial for maintaining signal integrity in high-power applications.

Product Attributes

Transistor Type:LDMOS
Frequency:960MHz ~ 1.22GHz
Gain:17dB
Voltage - Test:50 V
Current Rating (Amps):54A
Noise Figure:- 
Current - Test:100 mA
Power - Output:450W
Voltage - Rated:100 V
Package / Case:SOT634A
Supplier Device Package:SOT634A
0 Remaining View Similar

In Stock

$578.45
2

Please send RFQ , we will respond immediately.

Related Product By Categories

MMRF5014HR5
MMRF5014HR5
NXP USA Inc.
FET RF 125V 2.5GHZ NI360
BLF183XRSU
BLF183XRSU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121B
PD57018TR-E
PD57018TR-E
STMicroelectronics
TRANSISTOR RF POWERSO-10
BLF404
BLF404
Rochester Electronics, LLC
BLF404 - UHF POWER VDMOS TRANSIS
PD55015-E
PD55015-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BF998E6327HTSA1
BF998E6327HTSA1
Infineon Technologies
MOSFET N-CH 12V 200MA SOT-143
BLF7G22LS-130,118
BLF7G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF404,115
BLF404,115
Ampleon USA Inc.
RF FET NCHA 40V 11.5DB SOT409A
BF1211WR,115
BF1211WR,115
NXP USA Inc.
MOSFET N-CH DUAL GATE 6V SOT343R
BLF6G22-45,112
BLF6G22-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
PD85004
PD85004
STMicroelectronics
FET RF 40V 870MHZ
BF908R,215
BF908R,215
NXP USA Inc.
MOSFET DUAL GATE 12V 40MA SOT143

Related Product By Brand

BLF888EU
BLF888EU
Ampleon USA Inc.
RF FET LDMOS 104V 17DB SOT539A
BLF8G10LS-300PJ
BLF8G10LS-300PJ
Ampleon USA Inc.
RF FET LDMOS 65V 20.5DB SOT539B
BLF184XRGJ
BLF184XRGJ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
BLF881,112
BLF881,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT467C
BLF884PS,112
BLF884PS,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT1121B
BLF888ESU
BLF888ESU
Ampleon USA Inc.
RF FET LDMOS 104V 17DB SOT539B
BLF6G10-45,112
BLF6G10-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 22.5DB SOT608A
BLF6G10LS-135RN,11
BLF6G10LS-135RN,11
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BLF6G22-45,135
BLF6G22-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
BLF7G20LS-250P,112
BLF7G20LS-250P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF7G21LS-160P,112
BLF7G21LS-160P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121B
BLM6G22-30G,135
BLM6G22-30G,135
Ampleon USA Inc.
IC AMP W-CDMA 2.11-2.17GHZ 16HSO