BLF6G10S-45K,118
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Ampleon USA Inc. BLF6G10S-45K,118

Manufacturer No:
BLF6G10S-45K,118
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 65V 23DB SOT608B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF6G10S-45K,118 is a high-power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor designed and manufactured by Ampleon USA Inc. This component is specifically optimized for high-power S-band applications, operating within the frequency range of 700 MHz to 1000 MHz. Although the product has been discontinued, it remains relevant for existing systems and maintenance purposes.

Key Specifications

Symbol Parameter Conditions Min Typ/Nom Max Unit
f range frequency range 700 1000 MHz
P L(3dB) nominal output power at 3 dB gain compression Test signal: 2-c WCDMA 45 W
G p power gain P L(AV) = 1 W; V DS = 28 V 21.8 23 24.5 dB
RL in input return loss P L(AV) = 1 W; V DS = 28 V; I Dq = 350 mA -9 -5.5 dB
η D drain efficiency P L(AV) = 1 W; V DS = 28 V; 920 MHz < f < 960 MHz; I Dq = 350 mA 7 8 %
P L(AV) average output power 1 W
ACPR adjacent channel power ratio P L(AV) = 1 W; V DS = 28 V; 920 MHz < f < 960 MHz; I Dq = 350 mA -48.5 -45.5 dBc

Key Features

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (700 MHz to 1000 MHz)
  • Internally matched for ease of use
  • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS compliant)
  • High gain and efficiency
  • Capable of pulsed or CW operation
  • Suitable for high-frequency operations
  • Energy-efficient operation

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multicarrier applications in the 700 MHz to 1000 MHz frequency range
  • Radar systems
  • Broadcast transmitters
  • Avionics
  • Communications infrastructure

Q & A

  1. What is the frequency range of the BLF6G10S-45K,118?

    The BLF6G10S-45K,118 operates within the frequency range of 700 MHz to 1000 MHz.

  2. What is the nominal output power at 3 dB gain compression for this transistor?

    The nominal output power at 3 dB gain compression is 45 W.

  3. What are the key features of the BLF6G10S-45K,118?

    Key features include easy power control, integrated ESD protection, excellent ruggedness, high efficiency, and excellent thermal stability.

  4. Is the BLF6G10S-45K,118 RoHS compliant?
  5. What are the typical applications of the BLF6G10S-45K,118?

    Typical applications include RF power amplifiers for W-CDMA base stations, multicarrier applications, radar systems, broadcast transmitters, avionics, and communications infrastructure.

  6. What is the package type of the BLF6G10S-45K,118?

    The package type is SOT608B.

  7. What is the power gain of the BLF6G10S-45K,118?

    The power gain is typically 23 dB, with a range of 21.8 dB to 24.5 dB.

  8. Is the BLF6G10S-45K,118 suitable for high-frequency operations?
  9. What is the drain efficiency of the BLF6G10S-45K,118?

    The drain efficiency is typically 8%, with a range of 7% to 8%.

  10. Is the BLF6G10S-45K,118 capable of pulsed or CW operation?

Product Attributes

Transistor Type:LDMOS
Frequency:922.5MHz ~ 957.5MHz
Gain:23dB
Voltage - Test:28 V
Current Rating (Amps):13A
Noise Figure:- 
Current - Test:350 mA
Power - Output:1W
Voltage - Rated:65 V
Package / Case:SOT-608B
Supplier Device Package:CDFM2
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