BLF7G24LS-100,118
  • Share:

Ampleon USA Inc. BLF7G24LS-100,118

Manufacturer No:
BLF7G24LS-100,118
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 65V 18DB SOT502B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF7G24LS-100,118 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. This component is specifically tailored for RF power amplifier applications in the frequency range of 2300 MHz to 2400 MHz, making it suitable for base station and multicarrier systems. Although this product has been discontinued, it remains relevant for existing systems and maintenance purposes.

Key Specifications

ParameterConditionsMinTyp/NomMaxUnit
f range-2300-2400MHz
P L(3dB)Test signal: NCDMA/IS95-100-W
G pV DS = 28 V-17.318dB
RL inV DS = 28 V; I Dq = 900 mA-14--dB
η DV DS = 28 V; 2300 MHz ≤ f ≤ 2400 MHz; I Dq = 900 mA2227-%
P L(AV)--20-W
ACPR 885kP L(AV) = 20 W; V DS = 28 V; 2300 MHz ≤ f ≤ 2400 MHz; I Dq = 900 mA-46-40-dBc

Key Features

  • High efficiency
  • Integrated ESD protection
  • Low memory effects providing excellent digital pre-distortion capability
  • Internally matched for ease of use
  • Excellent ruggedness
  • Low Rth providing excellent thermal stability
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • RF power amplifiers for base stations
  • Multicarrier applications in the 2300 MHz to 2400 MHz frequency range

Q & A

  1. What is the frequency range of the BLF7G24LS-100,118 transistor?
    The frequency range is from 2300 MHz to 2400 MHz.
  2. What is the nominal output power at 3 dB gain compression?
    The nominal output power at 3 dB gain compression is 100 W.
  3. What is the typical power gain of this transistor?
    The typical power gain is 18 dB at V DS = 28 V.
  4. Does the BLF7G24LS-100,118 have integrated ESD protection?
    Yes, it has integrated ESD protection.
  5. What is the typical drain efficiency of this transistor?
    The typical drain efficiency is 27% at V DS = 28 V and 2300 MHz ≤ f ≤ 2400 MHz.
  6. What are the common applications of the BLF7G24LS-100,118?
    Common applications include RF power amplifiers for base stations and multicarrier systems.
  7. Is the BLF7G24LS-100,118 compliant with any environmental directives?
    Yes, it is compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances.
  8. What is the package type of the BLF7G24LS-100,118?
    The package type is SOT502B.
  9. Is the BLF7G24LS-100,118 still in production?
    No, this product has been discontinued.
  10. Where can I find detailed specifications and datasheets for the BLF7G24LS-100,118?
    Detailed specifications and datasheets can be found on the Ampleon website or through authorized distributors like Digi-Key and Rochester Electronics.

Product Attributes

Transistor Type:LDMOS
Frequency:2.3GHz ~ 2.4GHz
Gain:18dB
Voltage - Test:28 V
Current Rating (Amps):28A
Noise Figure:- 
Current - Test:900 mA
Power - Output:20W
Voltage - Rated:65 V
Package / Case:SOT-502B
Supplier Device Package:SOT502B
0 Remaining View Similar

In Stock

$57.34
3

Please send RFQ , we will respond immediately.

Same Series
BLF7G24L-100,112
BLF7G24L-100,112
RF TRANSISTOR
BLF7G24LS-100,112
BLF7G24LS-100,112
RF FET LDMOS 65V 18DB SOT502B
BLF7G24L-100,118
BLF7G24L-100,118
RF FET LDMOS 65V 18DB SOT502A

Similar Products

Part Number BLF7G24LS-100,118 BLF7G24LS-140,118 BLF7G27LS-100,118 BLF7G24L-100,118 BLF7G24LS-100,112
Manufacturer Ampleon USA Inc. NXP USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Last Time Buy Active Last Time Buy Obsolete Last Time Buy
Transistor Type LDMOS LDMOS LDMOS LDMOS LDMOS
Frequency 2.3GHz ~ 2.4GHz 2.3GHz ~ 2.4GHz 2.5GHz ~ 2.7GHz 2.3GHz ~ 2.4GHz 2.3GHz ~ 2.4GHz
Gain 18dB 18.5dB 18dB 18dB 18dB
Voltage - Test 28 V 28 V 28 V 28 V 28 V
Current Rating (Amps) 28A 28A 28A 28A 28A
Noise Figure - - - - -
Current - Test 900 mA 1.3 A 900 mA 900 mA 900 mA
Power - Output 20W 30W 20W 20W 20W
Voltage - Rated 65 V 65 V 65 V 65 V 65 V
Package / Case SOT-502B SOT-502B SOT-502B SOT-502A SOT-502B
Supplier Device Package SOT502B SOT502B SOT502B SOT502A SOT502B

Related Product By Categories

NTD3055AVT4
NTD3055AVT4
onsemi
NFET DPAK 60V 0.15R TR
BLF6G27LS-40P,112
BLF6G27LS-40P,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 28V LDMOST
BLF871S,112
BLF871S,112
Ampleon USA Inc.
RF FET LDMOS 89V 19DB SOT467B
NE5550779A-T1-A
NE5550779A-T1-A
Renesas Electronics America Inc
RF POWER N-CHANNEL, MOSFET
PD85035S-E
PD85035S-E
STMicroelectronics
FET RF 40V 870MHZ
BLF8G22LS-140J
BLF8G22LS-140J
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF8G20LS-220J
BLF8G20LS-220J
Ampleon USA Inc.
RF FET LDMOS 65V 18.9DB SOT502B
BLF8G09LS-270GWJ
BLF8G09LS-270GWJ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
BF998,215
BF998,215
NXP USA Inc.
MOSFET NCH DUAL GATE 12V SOT143B
NE5550779A-A
NE5550779A-A
CEL
FET RF 30V 900MHZ 79A
AFT05MS003NT1
AFT05MS003NT1
NXP USA Inc.
IC TRANS RF LDMOS
BLF6G27-10GHJ
BLF6G27-10GHJ
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C

Related Product By Brand

MX0912B351Y
MX0912B351Y
Ampleon USA Inc.
RF POWER BIPOLAR TRANSISTOR, 1-E
BLL6H0514-25,112
BLL6H0514-25,112
Ampleon USA Inc.
RF FET LDMOS 100V 21DB SOT467C
BLF888EU
BLF888EU
Ampleon USA Inc.
RF FET LDMOS 104V 17DB SOT539A
BLF578XR,112
BLF578XR,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 50V SOT539A
BLF647PSJ
BLF647PSJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
BLF6G27-45,112
BLF6G27-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608A
BLF878,112
BLF878,112
Ampleon USA Inc.
RF FET LDMOS 89V 21DB SOT979A
BLF6G20LS-110,118
BLF6G20LS-110,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT502B
BLF6G20LS-110,112
BLF6G20LS-110,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT502B
BLF6G22LS-130,118
BLF6G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BLF6G20S-45,112
BLF6G20S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
BLF8G22LS-160BV:11
BLF8G22LS-160BV:11
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1120B