Overview
The BLF8G20LS-220J is a 220 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for use in RF power amplifiers, particularly in base station applications. This transistor operates within the frequency range of 1800 MHz to 2000 MHz, making it suitable for W-CDMA and multi-carrier systems. Despite being discontinued, it remains a significant component in the realm of RF power amplification due to its robust features and performance characteristics.
Key Specifications
| Symbol | Parameter | Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|---|
| f range | frequency range | 1800 | 2000 | MHz | ||
| P L(3dB) | nominal output power at 3 dB gain compression | Test signal: 2-c W-CDMA | 220 | W | ||
| G p | power gain | P L(AV) = 55 W; V DS = 28 V | 17.8 | 18.9 | dB | |
| RL in | input return loss | P L(AV) = 55 W; V DS = 28 V; I Dq = 1600 mA | -15.5 | -7 | dB | |
| η D | drain efficiency | P L(AV) = 55 W; V DS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; I Dq = 1600 mA | 29 | 34 | % | |
| ACPR | adjacent channel power ratio | P L(AV) = 55 W; V DS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; I Dq = 1600 mA | -31 | -26 | dBc |
Key Features
- Excellent Ruggedness: The BLF8G20LS-220J is designed to withstand harsh operating conditions.
- High Efficiency: It offers high drain efficiency, typically up to 34%, ensuring efficient power use.
- Low Rth: Provides excellent thermal stability due to its low thermal resistance.
- Broadband Operation: Designed for broadband operation, making it versatile for various frequency ranges.
- Lower Output Capacitance: Optimized for improved performance in Doherty applications.
- Low Memory Effects: Excellent pre-distortability due to low memory effects.
- Internally Matched: Simplifies the design process by being internally matched.
- Integrated ESD Protection: Protects the device from electrostatic discharge.
- RoHS Compliance: Compliant with Directive 2002/95/EC regarding the Restriction of Hazardous Substances.
Applications
- RF Power Amplifiers for W-CDMA Base Stations: Ideal for base station applications in the 1800 MHz to 2000 MHz frequency range.
- Multi-Carrier Applications: Suitable for multi-carrier systems within the same frequency range.
Q & A
- What is the frequency range of the BLF8G20LS-220J?
The BLF8G20LS-220J operates within the frequency range of 1800 MHz to 2000 MHz.
- What is the nominal output power of the BLF8G20LS-220J at 3 dB gain compression?
The nominal output power is 220 W.
- What is the typical power gain of the BLF8G20LS-220J?
The typical power gain is 18.9 dB.
- What is the drain efficiency of the BLF8G20LS-220J?
The drain efficiency is typically up to 34%.
- Is the BLF8G20LS-220J internally matched?
- Does the BLF8G20LS-220J have integrated ESD protection?
- What is the package type of the BLF8G20LS-220J?
The package type is SOT502B.
- Is the BLF8G20LS-220J RoHS compliant?
- What are the typical applications of the BLF8G20LS-220J?
- What is the current status of the BLF8G20LS-220J?
