CLF1G0035-100PU
  • Share:

Ampleon USA Inc. CLF1G0035-100PU

Manufacturer No:
CLF1G0035-100PU
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF MOSFET HEMT 50V LDMOST
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CLF1G0035-100PU is a high-performance RF power GaN HEMT (Gallium Nitride High Electron Mobility Transistor) designed and manufactured by Ampleon USA Inc. This device is part of Ampleon's general-purpose broadband GaN HEMT family, offering exceptional power handling and efficiency across a wide frequency range.

It is specifically engineered for use in demanding RF applications, including wireless communication systems, radar, and other high-frequency applications where power density and spectral purity are critical.

Key Specifications

Parameter Value Unit
Power Output 100 Watts
Frequency Range DC to 3.5 GHz
Voltage Rating 50 Volts
Gain 12.5 dB
Package Type SOT-1228A
RoHS Status Compliant

Key Features

  • High-power GaN HEMT technology for efficient RF power amplification.
  • Broadband operation from DC to 3.5 GHz, making it versatile for various RF applications.
  • High-frequency gain of 12.5 dB and low noise figure, ensuring high signal quality.
  • Compact SOT-1228A package, suitable for space-constrained designs.
  • ROHS compliant, ensuring environmental sustainability.
  • Designed for harsh environments and demanding frequency bands, offering unparalleled reliability and efficiency.

Applications

  • Wireless communication systems, including cellular base stations and mobile networks.
  • Radar systems, where high power and frequency stability are crucial.
  • Telecommunications equipment, such as microwave links and satellite communications.
  • Industrial applications, including power supplies, inverters, and motor drives.
  • Automotive systems, particularly in vehicle-to-everything (V2X) communication and radar systems.

Q & A

  1. What is the power output of the CLF1G0035-100PU?

    The CLF1G0035-100PU has a power output of 100 watts.

  2. What is the frequency range of the CLF1G0035-100PU?

    The device operates from DC to 3.5 GHz.

  3. What is the voltage rating of the CLF1G0035-100PU?

    The voltage rating is 50 volts.

  4. What package type does the CLF1G0035-100PU use?

    The device is housed in a SOT-1228A package.

  5. Is the CLF1G0035-100PU ROHS compliant?

    Yes, the CLF1G0035-100PU is ROHS compliant.

  6. What are the typical applications of the CLF1G0035-100PU?

    Typical applications include wireless communication systems, radar, telecommunications equipment, and industrial applications.

  7. What is the gain of the CLF1G0035-100PU?

    The device has a high-frequency gain of 12.5 dB.

  8. Why is GaN HEMT technology used in the CLF1G0035-100PU?

    GaN HEMT technology is used for its high efficiency and power handling capabilities in RF applications.

  9. Is the CLF1G0035-100PU suitable for harsh environments?

    Yes, the device is designed to operate in harsh environments and demanding frequency bands.

  10. What kind of support services are available for the CLF1G0035-100PU?

    Manufacturers and distributors often provide technical support, datasheets, and assembly services for this component.

Product Attributes

Transistor Type:GaN HEMT
Frequency:3GHz
Gain:14dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:100 mA
Power - Output:100W
Voltage - Rated:150 V
Package / Case:SOT-1228A
Supplier Device Package:LDMOST
0 Remaining View Similar

In Stock

$284.64
4

Please send RFQ , we will respond immediately.

Similar Products

Part Number CLF1G0035-100PU CLF1G0035-200PU CLF1G0035-100P
Manufacturer Ampleon USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Not For New Designs Obsolete Active
Transistor Type GaN HEMT - HEMT
Frequency 3GHz - 3.5GHz
Gain 14dB - 12.5dB
Voltage - Test 50 V - 50 V
Current Rating (Amps) - - -
Noise Figure - - -
Current - Test 100 mA - 330 mA
Power - Output 100W - 100W
Voltage - Rated 150 V - 150 V
Package / Case SOT-1228A - SOT-1228A
Supplier Device Package LDMOST - LDMOST

Related Product By Categories

NTD3055AVT4
NTD3055AVT4
onsemi
NFET DPAK 60V 0.15R TR
BLF7G24LS-140,118
BLF7G24LS-140,118
NXP USA Inc.
N-CHANNEL, MOSFET
CLF1G0035-100P
CLF1G0035-100P
NXP USA Inc.
RF SMALL SIGNAL FIELD-EFFECT TRA
A2I25D025NR1
A2I25D025NR1
NXP USA Inc.
IC TRANS RF LDMOS
CLF1G0035-50
CLF1G0035-50
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
BLF6G21-10G,135
BLF6G21-10G,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BLF6G21-10G,112
BLF6G21-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BSS83,235
BSS83,235
NXP USA Inc.
MOSFET N-CH 10V 50MA SOT143
BLF2043F,112
BLF2043F,112
Ampleon USA Inc.
RF FET LDMOS 65V 11DB SOT467C
BLF878,112
BLF878,112
Ampleon USA Inc.
RF FET LDMOS 89V 21DB SOT979A
BF512,215
BF512,215
NXP USA Inc.
JFET N-CH 20V 30MA SOT23
BLF6G27LS-40PHJ
BLF6G27LS-40PHJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB

Related Product By Brand

BLF188XRGJ
BLF188XRGJ
Ampleon USA Inc.
RF FET LDMOS 135V 24DB SOT1248C
BLF888A,112
BLF888A,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539A
BLP7G22-10Z
BLP7G22-10Z
Ampleon USA Inc.
RF FET LDMOS 65V 16DB 12VDFN
BLF8G10LS-300PJ
BLF8G10LS-300PJ
Ampleon USA Inc.
RF FET LDMOS 65V 20.5DB SOT539B
BLF871S,112
BLF871S,112
Ampleon USA Inc.
RF FET LDMOS 89V 19DB SOT467B
BLF884PS,112
BLF884PS,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT1121B
BLF8G22LS-140U
BLF8G22LS-140U
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLS6G3135S-120,112
BLS6G3135S-120,112
Ampleon USA Inc.
RF FET LDMOS 60V 11DB SOT502B
BLF6G27S-45,112
BLF6G27S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF6G27-10G,118
BLF6G27-10G,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF640U
BLF640U
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BLF6G27LS-40PHJ
BLF6G27LS-40PHJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB