SD2942W
  • Share:

STMicroelectronics SD2942W

Manufacturer No:
SD2942W
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IC TRANS RF HF/VHF/UHF M244
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SD2942W is a gold metallized N-channel MOS field-effect RF power transistor produced by STMicroelectronics. This transistor is designed for high-power applications in the HF/VHF/UHF frequency range, offering 25% lower RDS(ON) compared to industry standards and 20% higher power saturation than the ST SD2932. These characteristics make the SD2942W ideal for 50 V DC very high power applications up to 250 MHz.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (V(BR)DSS) 130 V
Drain-Gate Voltage (VDGR) 130 V
Gate-Source Voltage (VGS) ±40 V
Drain Current (ID) 40 A
Power Dissipation (PDISS) 500 W
Maximum Operating Junction Temperature (TJ) +200 °C
Storage Temperature (TSTG) -65 to +150 °C
Output Power (POUT) @ 175 MHz 350 W
Gain @ 175 MHz 15 dB
Efficiency @ 175 MHz 61%
Package M244
Packing Type Tube
RoHS Compliance Ecopack1

Key Features

  • Gold metallization for improved reliability and thermal stability
  • Excellent thermal stability
  • Common source push-pull configuration
  • Low RDS(ON) - 25% lower than industry standard
  • High power saturation - 20% higher than ST SD2932
  • High output power: 350 W min. with 15 dB gain @ 175 MHz
  • Enhancement mode N-channel MOSFET
  • FASTON connectors, soldering, and THT electrical mounting
  • Mechanical mounting via screws

Applications

The SD2942W is suitable for various high-power RF applications, including:

  • HF, VHF, and UHF radio frequency amplifiers
  • High-power broadcast transmitters
  • Radar systems
  • Industrial and medical RF generators
  • Other applications requiring high power and efficiency in the frequency range up to 250 MHz

Q & A

  1. What is the maximum drain-source voltage of the SD2942W?

    The maximum drain-source voltage (V(BR)DSS) is 130 V.

  2. What is the typical output power of the SD2942W at 175 MHz?

    The typical output power (POUT) at 175 MHz is 350 W with a gain of 15 dB.

  3. What is the maximum operating junction temperature of the SD2942W?

    The maximum operating junction temperature (TJ) is +200 °C.

  4. What is the package type of the SD2942W?

    The SD2942W comes in an M244 package.

  5. Is the SD2942W RoHS compliant?
  6. What are the key features of the SD2942W?
  7. What are the typical applications of the SD2942W?
  8. What is the efficiency of the SD2942W at 175 MHz?
  9. How is the SD2942W mounted electrically and mechanically?
  10. What is the storage temperature range for the SD2942W?

Product Attributes

Transistor Type:N-Channel
Frequency:175MHz
Gain:17dB
Voltage - Test:50 V
Current Rating (Amps):40A
Noise Figure:- 
Current - Test:500 mA
Power - Output:350W
Voltage - Rated:130 V
Package / Case:M244
Supplier Device Package:M244
0 Remaining View Similar

In Stock

$189.21
3

Please send RFQ , we will respond immediately.

Same Series
SD2942
SD2942
TRANS RF N-CH HF/VHF/UHF M244

Similar Products

Part Number SD2942W SD2943W SD2932W SD2942
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete
Transistor Type N-Channel N-Channel N-Channel N-Channel
Frequency 175MHz 30MHz 175MHz 175MHz
Gain 17dB 25dB 16dB 17dB
Voltage - Test 50 V 50 V 50 V 50 V
Current Rating (Amps) 40A 40A 40A 40A
Noise Figure - - - -
Current - Test 500 mA 250 mA 500 mA 500 mA
Power - Output 350W 350W 300W 350W
Voltage - Rated 130 V 130 V 125 V 130 V
Package / Case M244 M177 M244 M244
Supplier Device Package M244 M177 M244 M244

Related Product By Categories

SMMBFJ310LT1G
SMMBFJ310LT1G
onsemi
RF MOSFET N-CH JFET 10V SOT23
BLF184XRGJ
BLF184XRGJ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
MRFE6VP5600HR6
MRFE6VP5600HR6
NXP USA Inc.
FET RF 2CH 130V 230MHZ NI1230
BLF404
BLF404
Rochester Electronics, LLC
BLF404 - UHF POWER VDMOS TRANSIS
BLF881,112
BLF881,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT467C
NE5550779A-T1-A
NE5550779A-T1-A
Renesas Electronics America Inc
RF POWER N-CHANNEL, MOSFET
PD54008-E
PD54008-E
STMicroelectronics
FET RF 25V 500MHZ PWRSO10
CLF1G0035-100H
CLF1G0035-100H
Ampleon USA Inc.
CLF1G0035-100 - 100W BROADBAND R
BLF871,112
BLF871,112
Ampleon USA Inc.
RF FET LDMOS 89V 19DB SOT467C
BLF6G27S-45,112
BLF6G27S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF6G20LS-110,118
BLF6G20LS-110,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT502B
BF909R,235
BF909R,235
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143

Related Product By Brand

SM15T75AY
SM15T75AY
STMicroelectronics
TVS DIODE 64.1VWM 134VC SMC
SM6T12CA
SM6T12CA
STMicroelectronics
TVS DIODE 10.2VWM 21.7VC SMB
STPSC10H12CWL
STPSC10H12CWL
STMicroelectronics
DIODE ARRAY SCHOTTKY 1200V TO247
STTH802CB-TR
STTH802CB-TR
STMicroelectronics
DIODE ARRAY GP 200V 4A DPAK
MJD31CT4-A
MJD31CT4-A
STMicroelectronics
TRANS NPN 100V 3A DPAK
STM32F207ZET6TR
STM32F207ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32L562VET6
STM32L562VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32F091VCT7TR
STM32F091VCT7TR
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100LFQFP
TDA7360HS
TDA7360HS
STMicroelectronics
IC AMP AB MONO/STER 11MULTIWATT
TEA3718SDP
TEA3718SDP
STMicroelectronics
IC MOTOR DRVR BIPOLAR 16POWERDIP
VND5E006ASP-E
VND5E006ASP-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 PWRSO16
L7809ACD2T-TR
L7809ACD2T-TR
STMicroelectronics
IC REG LINEAR 9V 1.5A D2PAK