BLF878,112
  • Share:

Ampleon USA Inc. BLF878,112

Manufacturer No:
BLF878,112
Manufacturer:
Ampleon USA Inc.
Package:
Tube
Description:
RF FET LDMOS 89V 21DB SOT979A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF878,112 is a high-performance RF power transistor manufactured by Ampleon USA Inc. This device is designed for use in RF power amplifiers and is particularly suited for applications in the frequency range of 0.47 to 0.86 GHz. The BLF878,112 is built using LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology, which offers high power density and efficiency. It is packaged in the SOT-979A case, making it suitable for surface mount technology (SMT) or surface mount device (SMD) applications.

Key Specifications

ParameterValue
Manufacturer Part NumberBLF878,112
ManufacturerAmpleon USA Inc.
DescriptionRF FET LDMOS 89V 21dB SOT979A
Frequency Range0.47 to 0.86 GHz
Power Output300 W
Gain21 dB
Voltage - Test42 V
Voltage - Rated89 V
Transistor TypeLDMOS (Dual), Common Source
Package / CaseSOT-979A
Mounting TypeSMT/SMD

Key Features

  • High power output of 300 W, making it suitable for high-power RF applications.
  • Operates in the frequency range of 0.47 to 0.86 GHz, ideal for various RF systems.
  • LDMOS technology provides high power density and efficiency.
  • 21 dB gain, ensuring strong signal amplification.
  • Rated voltage of 89 V and test voltage of 42 V.
  • SOT-979A packaging for SMT/SMD applications, enhancing ease of integration.

Applications

The BLF878,112 is widely used in various RF power amplifier applications, including but not limited to:

  • Base stations for cellular networks.
  • RF generators and test equipment.
  • Industrial, scientific, and medical (ISM) equipment.
  • Broadcasting and telecommunications systems.
  • High-power RF amplifiers in radar and military communications.

Q & A

  1. What is the frequency range of the BLF878,112?
    The BLF878,112 operates in the frequency range of 0.47 to 0.86 GHz.
  2. What is the power output of the BLF878,112?
    The power output of the BLF878,112 is 300 W.
  3. What technology is used in the BLF878,112?
    The BLF878,112 uses LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology.
  4. What is the gain of the BLF878,112?
    The gain of the BLF878,112 is 21 dB.
  5. What is the rated voltage of the BLF878,112?
    The rated voltage of the BLF878,112 is 89 V.
  6. What is the test voltage of the BLF878,112?
    The test voltage of the BLF878,112 is 42 V.
  7. What type of packaging does the BLF878,112 use?
    The BLF878,112 is packaged in the SOT-979A case.
  8. Is the BLF878,112 suitable for surface mount technology?
    Yes, the BLF878,112 is suitable for SMT/SMD applications.
  9. What are some common applications of the BLF878,112?
    The BLF878,112 is used in base stations, RF generators, ISM equipment, broadcasting, and telecommunications systems, among others.
  10. Where can I find detailed specifications for the BLF878,112?
    Detailed specifications can be found on the official Ampleon website, as well as on distributor websites like Digi-Key and RFMW.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:860MHz
Gain:21dB
Voltage - Test:40 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:1.4 A
Power - Output:300W
Voltage - Rated:89 V
Package / Case:SOT-979A
Supplier Device Package:CDFM2
0 Remaining View Similar

In Stock

-
379

Please send RFQ , we will respond immediately.

Similar Products

Part Number BLF878,112 BLF888,112 BLF871,112 BLF872,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS LDMOS
Frequency 860MHz 860MHz 860MHz -
Gain 21dB 19dB 19dB -
Voltage - Test 40 V 50 V 40 V 32 V
Current Rating (Amps) - - - 41A
Noise Figure - - - -
Current - Test 1.4 A 1.3 A 500 mA 900 mA
Power - Output 300W 250W 100W 300W
Voltage - Rated 89 V 104 V 89 V 65 V
Package / Case SOT-979A SOT-979A SOT-467C SOT-800-1
Supplier Device Package CDFM2 CDFM2 SOT467C LDMOST

Related Product By Categories

MMRF5014HR5
MMRF5014HR5
NXP USA Inc.
FET RF 125V 2.5GHZ NI360
AFT27S010NT1
AFT27S010NT1
NXP USA Inc.
FET RF NCH 65V 2700MHZ PLD1.5W
BLF6G10LS-200RN,11
BLF6G10LS-200RN,11
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT502B
NE5550779A-T1-A
NE5550779A-T1-A
Renesas Electronics America Inc
RF POWER N-CHANNEL, MOSFET
PD55015S-E
PD55015S-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BLF8G22LS-220U
BLF8G22LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BLF7G20LS-200,112
BLF7G20LS-200,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF6G27-45,112
BLF6G27-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608A
BF998,215
BF998,215
NXP USA Inc.
MOSFET NCH DUAL GATE 12V SOT143B
BF512,215
BF512,215
NXP USA Inc.
JFET N-CH 20V 30MA SOT23
NE5550779A-A
NE5550779A-A
CEL
FET RF 30V 900MHZ 79A
BF909AWR,115
BF909AWR,115
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143R

Related Product By Brand

BLF278
BLF278
Ampleon USA Inc.
RF PFET, 2-ELEMENT, VERY HIGH FR
BLF888EU
BLF888EU
Ampleon USA Inc.
RF FET LDMOS 104V 17DB SOT539A
BLF888B,112
BLF888B,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
CLF1G0035-50
CLF1G0035-50
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
BLF8G22LS-220U
BLF8G22LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BLS6G3135S-120,112
BLS6G3135S-120,112
Ampleon USA Inc.
RF FET LDMOS 60V 11DB SOT502B
BLA6H0912-500,112
BLA6H0912-500,112
Ampleon USA Inc.
RF FET LDMOS 100V 17DB SOT634A
BLF6G10LS-260PRN,1
BLF6G10LS-260PRN,1
Ampleon USA Inc.
RF FET LDMOS 65V 22DB SOT539B
BLF245,112
BLF245,112
Ampleon USA Inc.
RF FET NCHA 65V 15.5DB SOT123A
BLF6G27S-45,118
BLF6G27S-45,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF6G27S-45,112
BLF6G27S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF6G38LS-50,118
BLF6G38LS-50,118
Ampleon USA Inc.
RF FET LDMOS 65V 14DB SOT502B