BLF878,112
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Ampleon USA Inc. BLF878,112

Manufacturer No:
BLF878,112
Manufacturer:
Ampleon USA Inc.
Package:
Tube
Description:
RF FET LDMOS 89V 21DB SOT979A
Delivery:
Payment:
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Product Introduction

Overview

The BLF878,112 is a high-performance RF power transistor manufactured by Ampleon USA Inc. This device is designed for use in RF power amplifiers and is particularly suited for applications in the frequency range of 0.47 to 0.86 GHz. The BLF878,112 is built using LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology, which offers high power density and efficiency. It is packaged in the SOT-979A case, making it suitable for surface mount technology (SMT) or surface mount device (SMD) applications.

Key Specifications

ParameterValue
Manufacturer Part NumberBLF878,112
ManufacturerAmpleon USA Inc.
DescriptionRF FET LDMOS 89V 21dB SOT979A
Frequency Range0.47 to 0.86 GHz
Power Output300 W
Gain21 dB
Voltage - Test42 V
Voltage - Rated89 V
Transistor TypeLDMOS (Dual), Common Source
Package / CaseSOT-979A
Mounting TypeSMT/SMD

Key Features

  • High power output of 300 W, making it suitable for high-power RF applications.
  • Operates in the frequency range of 0.47 to 0.86 GHz, ideal for various RF systems.
  • LDMOS technology provides high power density and efficiency.
  • 21 dB gain, ensuring strong signal amplification.
  • Rated voltage of 89 V and test voltage of 42 V.
  • SOT-979A packaging for SMT/SMD applications, enhancing ease of integration.

Applications

The BLF878,112 is widely used in various RF power amplifier applications, including but not limited to:

  • Base stations for cellular networks.
  • RF generators and test equipment.
  • Industrial, scientific, and medical (ISM) equipment.
  • Broadcasting and telecommunications systems.
  • High-power RF amplifiers in radar and military communications.

Q & A

  1. What is the frequency range of the BLF878,112?
    The BLF878,112 operates in the frequency range of 0.47 to 0.86 GHz.
  2. What is the power output of the BLF878,112?
    The power output of the BLF878,112 is 300 W.
  3. What technology is used in the BLF878,112?
    The BLF878,112 uses LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology.
  4. What is the gain of the BLF878,112?
    The gain of the BLF878,112 is 21 dB.
  5. What is the rated voltage of the BLF878,112?
    The rated voltage of the BLF878,112 is 89 V.
  6. What is the test voltage of the BLF878,112?
    The test voltage of the BLF878,112 is 42 V.
  7. What type of packaging does the BLF878,112 use?
    The BLF878,112 is packaged in the SOT-979A case.
  8. Is the BLF878,112 suitable for surface mount technology?
    Yes, the BLF878,112 is suitable for SMT/SMD applications.
  9. What are some common applications of the BLF878,112?
    The BLF878,112 is used in base stations, RF generators, ISM equipment, broadcasting, and telecommunications systems, among others.
  10. Where can I find detailed specifications for the BLF878,112?
    Detailed specifications can be found on the official Ampleon website, as well as on distributor websites like Digi-Key and RFMW.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:860MHz
Gain:21dB
Voltage - Test:40 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:1.4 A
Power - Output:300W
Voltage - Rated:89 V
Package / Case:SOT-979A
Supplier Device Package:CDFM2
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Similar Products

Part Number BLF878,112 BLF888,112 BLF871,112 BLF872,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS LDMOS
Frequency 860MHz 860MHz 860MHz -
Gain 21dB 19dB 19dB -
Voltage - Test 40 V 50 V 40 V 32 V
Current Rating (Amps) - - - 41A
Noise Figure - - - -
Current - Test 1.4 A 1.3 A 500 mA 900 mA
Power - Output 300W 250W 100W 300W
Voltage - Rated 89 V 104 V 89 V 65 V
Package / Case SOT-979A SOT-979A SOT-467C SOT-800-1
Supplier Device Package CDFM2 CDFM2 SOT467C LDMOST

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