BLA6H0912-500112
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NXP USA Inc. BLA6H0912-500112

Manufacturer No:
BLA6H0912-500112
Manufacturer:
NXP USA Inc.
Package:
Tray
Description:
BLA6H0912-500 - LDMOS AVIONICS R
Delivery:
Payment:
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Product Introduction

Overview

The BLA6H0912-500,112 is an RF Power Field-Effect Transistor (FET) manufactured by Ampleon USA Inc. This device is specifically designed for avionics transmitter applications, operating within the frequency range of 960 MHz to 1215 MHz. It is part of the broader category of LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) power transistors, known for their high power handling and efficiency.

Key Specifications

Parameter Min Typ/Nom Max Unit
Frequency Range 960 - 1215 MHz
Output Power (P L) - 450 - W
Power Gain (G p) 16 17 - dB
Drain Efficiency (η D) 45 50 - %
Drain-Source Voltage (V DS) - 50 - V
Drain Current-Max (ID) - 54 - A
Breakdown Voltage-Min 100 - - V
Package - SOT-634A - -
FET Technology - METAL-OXIDE SEMICONDUCTOR - -

Key Features

  • Easy power control
  • Integrated ESD protection
  • High flexibility with respect to pulse formats
  • Excellent ruggedness and thermal stability
  • High efficiency
  • Designed for broadband operation (960 MHz to 1215 MHz)
  • Internally matched for ease of use
  • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

Applications

The BLA6H0912-500,112 is primarily used in avionics radar applications within the frequency range of 960 MHz to 1215 MHz. Specific applications include:

  • Mode-S transponders
  • TCAS (Traffic Collision Avoidance System)
  • JTIDS (Joint Tactical Information Distribution System)
  • DME (Distance Measuring Equipment)
  • TACAN (Tactical Air Navigation)

Q & A

  1. What is the frequency range of the BLA6H0912-500,112?

    The frequency range is from 960 MHz to 1215 MHz.

  2. What is the maximum output power of the BLA6H0912-500,112?

    The maximum output power is 500 W.

  3. What type of FET technology is used in the BLA6H0912-500,112?

    The FET technology used is LDMOS (Laterally Diffused Metal-Oxide-Semiconductor).

  4. What is the drain-source voltage (V DS) of the BLA6H0912-500,112?

    The drain-source voltage (V DS) is 50 V.

  5. What is the maximum drain current (ID) of the BLA6H0912-500,112?

    The maximum drain current (ID) is 54 A.

  6. What is the package type of the BLA6H0912-500,112?

    The package type is SOT-634A.

  7. Is the BLA6H0912-500,112 RoHS compliant?

    Yes, the BLA6H0912-500,112 is RoHS compliant.

  8. What are the primary applications of the BLA6H0912-500,112?

    The primary applications include avionics radar systems such as Mode-S, TCAS, JTIDS, DME, and TACAN.

  9. Does the BLA6H0912-500,112 have integrated ESD protection?

    Yes, it has integrated ESD protection.

  10. What is the typical efficiency of the BLA6H0912-500,112?

    The typical efficiency is 50%.

Product Attributes

Transistor Type:LDMOS
Frequency:960MHz ~ 1.22GHz
Gain:17dB
Voltage - Test:50 V
Current Rating (Amps):54A
Noise Figure:- 
Current - Test:100 mA
Power - Output:450W
Voltage - Rated:100 V
Package / Case:SOT634A
Supplier Device Package:CDFM2
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$598.41
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