BLA6H0912-500112
  • Share:

NXP USA Inc. BLA6H0912-500112

Manufacturer No:
BLA6H0912-500112
Manufacturer:
NXP USA Inc.
Package:
Tray
Description:
BLA6H0912-500 - LDMOS AVIONICS R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLA6H0912-500,112 is an RF Power Field-Effect Transistor (FET) manufactured by Ampleon USA Inc. This device is specifically designed for avionics transmitter applications, operating within the frequency range of 960 MHz to 1215 MHz. It is part of the broader category of LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) power transistors, known for their high power handling and efficiency.

Key Specifications

Parameter Min Typ/Nom Max Unit
Frequency Range 960 - 1215 MHz
Output Power (P L) - 450 - W
Power Gain (G p) 16 17 - dB
Drain Efficiency (η D) 45 50 - %
Drain-Source Voltage (V DS) - 50 - V
Drain Current-Max (ID) - 54 - A
Breakdown Voltage-Min 100 - - V
Package - SOT-634A - -
FET Technology - METAL-OXIDE SEMICONDUCTOR - -

Key Features

  • Easy power control
  • Integrated ESD protection
  • High flexibility with respect to pulse formats
  • Excellent ruggedness and thermal stability
  • High efficiency
  • Designed for broadband operation (960 MHz to 1215 MHz)
  • Internally matched for ease of use
  • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

Applications

The BLA6H0912-500,112 is primarily used in avionics radar applications within the frequency range of 960 MHz to 1215 MHz. Specific applications include:

  • Mode-S transponders
  • TCAS (Traffic Collision Avoidance System)
  • JTIDS (Joint Tactical Information Distribution System)
  • DME (Distance Measuring Equipment)
  • TACAN (Tactical Air Navigation)

Q & A

  1. What is the frequency range of the BLA6H0912-500,112?

    The frequency range is from 960 MHz to 1215 MHz.

  2. What is the maximum output power of the BLA6H0912-500,112?

    The maximum output power is 500 W.

  3. What type of FET technology is used in the BLA6H0912-500,112?

    The FET technology used is LDMOS (Laterally Diffused Metal-Oxide-Semiconductor).

  4. What is the drain-source voltage (V DS) of the BLA6H0912-500,112?

    The drain-source voltage (V DS) is 50 V.

  5. What is the maximum drain current (ID) of the BLA6H0912-500,112?

    The maximum drain current (ID) is 54 A.

  6. What is the package type of the BLA6H0912-500,112?

    The package type is SOT-634A.

  7. Is the BLA6H0912-500,112 RoHS compliant?

    Yes, the BLA6H0912-500,112 is RoHS compliant.

  8. What are the primary applications of the BLA6H0912-500,112?

    The primary applications include avionics radar systems such as Mode-S, TCAS, JTIDS, DME, and TACAN.

  9. Does the BLA6H0912-500,112 have integrated ESD protection?

    Yes, it has integrated ESD protection.

  10. What is the typical efficiency of the BLA6H0912-500,112?

    The typical efficiency is 50%.

Product Attributes

Transistor Type:LDMOS
Frequency:960MHz ~ 1.22GHz
Gain:17dB
Voltage - Test:50 V
Current Rating (Amps):54A
Noise Figure:- 
Current - Test:100 mA
Power - Output:450W
Voltage - Rated:100 V
Package / Case:SOT634A
Supplier Device Package:CDFM2
0 Remaining View Similar

In Stock

$598.41
3

Please send RFQ , we will respond immediately.

Same Series
DD15S10LVLS/AA
DD15S10LVLS/AA
CONN D-SUB HD RCPT 15POS CRIMP
DD15S200TS
DD15S200TS
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE20/AA
CBC13W3S10HE20/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD44S32S0TX
DD44S32S0TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60T2X
DD44S32S60T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S50TX/AA
DD44S32S50TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

MRFE6VS25LR5
MRFE6VS25LR5
NXP USA Inc.
FET RF 133V 512MHZ NI360L
BLF183XRSU
BLF183XRSU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121B
BLF7G10LS-250,112
BLF7G10LS-250,112
NXP USA Inc.
N-CHANNEL, MOSFET
A2I25D025GNR1
A2I25D025GNR1
NXP USA Inc.
IC TRANS RF LDMOS
CLF1G0060-10
CLF1G0060-10
Ampleon USA Inc.
CLF1G0060-10 - 10W BROADBAND RF
BLF578,112
BLF578,112
Ampleon USA Inc.
RF FET LDMOS 110V 24DB SOT539A
BLF888DSU
BLF888DSU
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539B
PD54008-E
PD54008-E
STMicroelectronics
FET RF 25V 500MHZ PWRSO10
BLF871,112
BLF871,112
Ampleon USA Inc.
RF FET LDMOS 89V 19DB SOT467C
BLF6G10LS-135RN:11
BLF6G10LS-135RN:11
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
PD55003S
PD55003S
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BF1107,235
BF1107,235
NXP USA Inc.
MOSFET N-CH 3V 10MA SOT23

Related Product By Brand

PESD5V0U1BA115
PESD5V0U1BA115
NXP USA Inc.
TVS DIODE 5VWM SOD323
BB178,335
BB178,335
NXP USA Inc.
DIODE VHF VAR CAP 32V SOD523
BFU520VL
BFU520VL
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
A2T18H455W23NR6
A2T18H455W23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
LPC2194HBD64/01,15
LPC2194HBD64/01,15
NXP USA Inc.
IC MCU 16/32B 256KB FLASH 64LQFP
LPC2294HBD144/01K
LPC2294HBD144/01K
NXP USA Inc.
IC MCU 16/32B 256KB FLSH 144LQFP
MCHC908QT2CDWER
MCHC908QT2CDWER
NXP USA Inc.
IC MCU 8BIT 1.5KB FLASH 8SO
HEF4053BT/AUJ
HEF4053BT/AUJ
NXP USA Inc.
IC ANLG SWITCH TRPL SPDT 16SOIC
74HC02D/AU118
74HC02D/AU118
NXP USA Inc.
IC GATE NOR 4CH 2-INP 14SO
HEF4093BT/C4118
HEF4093BT/C4118
NXP USA Inc.
NAND GATE
SA605DK,112
SA605DK,112
NXP USA Inc.
RF RX ASK/FSK 0HZ-500MHZ 20SSOP
MPX53DP
MPX53DP
NXP USA Inc.
SENSOR DIFF PRESS 7.25PSI MAX