BLF6G27LS-40PHJ
  • Share:

Ampleon USA Inc. BLF6G27LS-40PHJ

Manufacturer No:
BLF6G27LS-40PHJ
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 65V 17DB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF6G27LS-40PHJ is a high-performance RF Field Effect Transistor (FET) manufactured by Ampleon USA Inc. This device is part of Ampleon's extensive portfolio of RF power products, which have been developed from the legacy of NXP Semiconductors' RF Power Division. The BLF6G27LS-40PHJ is designed to operate in the frequency range of 2.5 GHz to 2.7 GHz, making it suitable for various RF applications, including cellular base stations, radio and TV broadcasting, and radar systems.

Key Specifications

Parameter Value
Manufacturer Ampleon USA Inc.
Transistor Type LDMOS (Dual), Common Source
Frequency 2.5 GHz ~ 2.7 GHz
Gain 17.5 dB
Voltage - Test 28 V
Voltage - Rated 65 V
Current - Test 450 mA
Power - Output 12 W
Package / Case SOT-1121E
Packaging Tape & Reel (TR)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Key Features

  • High Gain and Efficiency: The BLF6G27LS-40PHJ offers a high gain of 17.5 dB, making it highly efficient for RF power applications.
  • Broad Frequency Range: Operates within the 2.5 GHz to 2.7 GHz frequency range, suitable for various wireless communication systems.
  • High Voltage Rating: Rated for 65 V, providing robust performance in high-power RF applications.
  • Low Noise Figure: Although not specified, LDMOS transistors are generally known for their low noise figures, which is crucial for maintaining signal integrity.
  • RoHS Compliance: Lead-free and RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.

Applications

  • Cellular Base Stations: Ideal for use in cellular base stations due to its high gain and efficiency in the relevant frequency range.
  • Radio and TV Broadcasting: Suitable for broadcasting applications requiring high-power RF amplification.
  • Radar Systems: Used in radar systems for air traffic control, military, and other surveillance applications.
  • Industrial and Medical Applications: Can be used in industrial lasers, medical equipment, and other high-power RF applications.

Q & A

  1. What is the frequency range of the BLF6G27LS-40PHJ?

    The BLF6G27LS-40PHJ operates in the frequency range of 2.5 GHz to 2.7 GHz.

  2. What is the gain of the BLF6G27LS-40PHJ?

    The gain of the BLF6G27LS-40PHJ is 17.5 dB.

  3. What is the rated voltage of the BLF6G27LS-40PHJ?

    The rated voltage of the BLF6G27LS-40PHJ is 65 V.

  4. What is the test current of the BLF6G27LS-40PHJ?

    The test current of the BLF6G27LS-40PHJ is 450 mA.

  5. What is the power output of the BLF6G27LS-40PHJ?

    The power output of the BLF6G27LS-40PHJ is 12 W.

  6. What is the packaging type of the BLF6G27LS-40PHJ?

    The BLF6G27LS-40PHJ is packaged in Tape & Reel (TR) format.

  7. Is the BLF6G27LS-40PHJ RoHS compliant?

    Yes, the BLF6G27LS-40PHJ is lead-free and RoHS compliant.

  8. What is the moisture sensitivity level (MSL) of the BLF6G27LS-40PHJ?

    The moisture sensitivity level (MSL) of the BLF6G27LS-40PHJ is 1 (Unlimited).

  9. What are some common applications of the BLF6G27LS-40PHJ?

    The BLF6G27LS-40PHJ is commonly used in cellular base stations, radio and TV broadcasting, radar systems, and other high-power RF applications.

  10. Who is the manufacturer of the BLF6G27LS-40PHJ?

    The BLF6G27LS-40PHJ is manufactured by Ampleon USA Inc.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:2.5GHz ~ 2.7GHz
Gain:17.5dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:450 mA
Power - Output:- 
Voltage - Rated:65 V
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
256

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S2S5WV50/AA
DD15S2S5WV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVL0/AA
DD15S20LVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV5S
DD15S20LV5S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE3X/AA
CBC13W3S10HE3X/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20WV5S
DD15S20WV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S5000
DD26S2S5000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T2X
DD26S2S50T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP

Related Product By Categories

A2I25D025GNR1
A2I25D025GNR1
NXP USA Inc.
IC TRANS RF LDMOS
MRFE6VS25GNR1
MRFE6VS25GNR1
NXP USA Inc.
RF MOSFET LDMOS 50V TO270-2 GULL
A2I25D025NR1
A2I25D025NR1
NXP USA Inc.
IC TRANS RF LDMOS
PD55015TR-E
PD55015TR-E
STMicroelectronics
TRANS RF N-CH FET POWERSO-10RF
PD55003L-E
PD55003L-E
STMicroelectronics
TRANSISTOR RF 5X5 POWERFLAT
BLF178XRS,112
BLF178XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 28DB SOT539B
BF908,215
BF908,215
NXP USA Inc.
MOSFET N-CH 12V 40MA SOT143B
BF909WR,115
BF909WR,115
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT343
BF909,215
BF909,215
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143
BLF2043F,112
BLF2043F,112
Ampleon USA Inc.
RF FET LDMOS 65V 11DB SOT467C
AFT05MS003NT1
AFT05MS003NT1
NXP USA Inc.
IC TRANS RF LDMOS
A2T18H455W23NR6
A2T18H455W23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO

Related Product By Brand

BLF645,112
BLF645,112
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT540A
CLF1G0035-50
CLF1G0035-50
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
BLF8G10LS-300PU
BLF8G10LS-300PU
Ampleon USA Inc.
RF FET LDMOS 65V 20.5DB SOT539B
BLF8G09LS-270GWJ
BLF8G09LS-270GWJ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
BLF647PSJ
BLF647PSJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
BLF178XRS,112
BLF178XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 28DB SOT539B
BLF2043F,112
BLF2043F,112
Ampleon USA Inc.
RF FET LDMOS 65V 11DB SOT467C
BLF278,112
BLF278,112
Ampleon USA Inc.
RF FET 2 NC 125V 22DB SOT262A1
BLF6G10S-45,112
BLF6G10S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B
BLF8G22LS-160BVX
BLF8G22LS-160BVX
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1244B
BLF7G24LS-140
BLF7G24LS-140
Ampleon USA Inc.
RF FET LDMOS 140W SOT502B
BLF6G10LS-200RN
BLF6G10LS-200RN
Ampleon USA Inc.
RF FET LDMOS 65V SOT539