Overview
The BLF6G27LS-75,112 is a high-performance RF power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by Ampleon (formerly part of NXP USA Inc.). This device is designed for use in RF power amplifiers, particularly in base stations and multicarrier applications within the frequency range of 2500 MHz to 2700 MHz.
It is known for its robust performance, high power handling, and efficiency, making it suitable for various wireless communication systems such as WiMAX, N-CDMA, and W-CDMA.
Key Specifications
| Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|
| VDS (Drain-Source Voltage) | - | - | 65 | V |
| VGS (Gate-Source Voltage) | - | -0.5 | +13 | V |
| ID (Drain Current) | - | - | 18 | A |
| Tstg (Storage Temperature) | - | -65 | +150 | °C |
| Tj (Junction Temperature) | - | - | 200 | °C |
| Package | - | - | SOT502B | - |
| Current Rating | - | - | 18 A | - |
| Rated Voltage | - | - | 65 V | - |
Key Features
- High Power Handling: Capable of handling high power levels, making it suitable for base station and multicarrier applications.
- High Efficiency: Offers high drain efficiency, which is crucial for minimizing power consumption and heat generation.
- Ruggedness: Can withstand a load mismatch corresponding to VSWR = 10:1 through all phases, ensuring robust operation under various conditions.
- Compliance with RoHS Directive: Compliant to Directive 2002/95/EC, regarding the Restriction of Hazardous Substances.
- Wide Frequency Range: Operates within the 2500 MHz to 2700 MHz frequency range, making it versatile for different wireless communication standards.
Applications
- RF Power Amplifiers for Base Stations: Ideal for use in base stations due to its high power handling and efficiency.
- Multicarrier Applications: Suitable for multicarrier scenarios, supporting various wireless communication standards such as WiMAX, N-CDMA, and W-CDMA.
Q & A
- What is the typical frequency range of the BLF6G27LS-75,112 transistor?
The typical frequency range is 2500 MHz to 2700 MHz.
- What is the maximum drain-source voltage (VDS) for this transistor?
The maximum drain-source voltage is 65 V.
- What is the maximum drain current (ID) for this transistor?
The maximum drain current is 18 A.
- What package type is used for the BLF6G27LS-75,112 transistor?
The package type is SOT502B.
- Is the BLF6G27LS-75,112 transistor compliant with the RoHS directive?
Yes, it is compliant with Directive 2002/95/EC regarding the Restriction of Hazardous Substances.
- What are the typical applications of the BLF6G27LS-75,112 transistor?
Typical applications include RF power amplifiers for base stations and multicarrier applications.
- How does the BLF6G27LS-75,112 handle load mismatch?
It can withstand a load mismatch corresponding to VSWR = 10:1 through all phases.
- What is the maximum junction temperature (Tj) for this transistor?
The maximum junction temperature is 200°C.
- What is the storage temperature range for the BLF6G27LS-75,112 transistor?
The storage temperature range is -65°C to +150°C.
- Is the BLF6G27LS-75,112 transistor still in production?
No, this product is no longer manufactured.
