BF1212WR,115
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NXP USA Inc. BF1212WR,115

Manufacturer No:
BF1212WR,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH DUAL GATE 6V SOT343R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BF1212WR,115 is an N-channel dual-gate MOSFET produced by NXP USA Inc. This component is designed for high-frequency applications and is packaged in a CMPAK-4 plastic surface-mounted package with reverse pinning. The dual-gate configuration allows for enhanced control over the MOSFET's operation, making it suitable for a variety of RF and microwave applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)6 V
VGS (Gate-Source Voltage)5 V
ID (Drain Current)12 mA
fT (Transition Frequency)400 MHz
PackageCMPAK-4 (plastic surface-mounted package with reverse pinning)
Gain30 dB

Key Features

  • N-channel dual-gate MOSFET for high-frequency applications
  • CMPAK-4 package with reverse pinning for surface mount
  • High transition frequency of 400 MHz
  • High gain of 30 dB
  • Low drain current of 12 mA

Applications

The BF1212WR,115 is primarily used in RF and microwave applications, including but not limited to:

  • RF amplifiers and switches
  • Microwave circuits
  • Wireless communication systems
  • High-frequency signal processing

Q & A

  1. What is the package type of the BF1212WR,115? The BF1212WR,115 is packaged in a CMPAK-4 plastic surface-mounted package with reverse pinning.
  2. What is the maximum drain-source voltage of the BF1212WR,115? The maximum drain-source voltage is 6 V.
  3. What is the transition frequency of the BF1212WR,115? The transition frequency is 400 MHz.
  4. What is the typical gain of the BF1212WR,115? The typical gain is 30 dB.
  5. What is the maximum drain current of the BF1212WR,115? The maximum drain current is 12 mA.
  6. What are the primary applications of the BF1212WR,115? The primary applications include RF amplifiers, microwave circuits, wireless communication systems, and high-frequency signal processing.
  7. Why is the dual-gate configuration useful in the BF1212WR,115? The dual-gate configuration allows for enhanced control over the MOSFET's operation, which is beneficial for high-frequency applications.
  8. Where can I find detailed specifications for the BF1212WR,115? Detailed specifications can be found in the datasheet available on NXP's official website and other electronic component distributors like Digi-Key and Mouser.
  9. What is the significance of the CMPAK-4 package? The CMPAK-4 package is a surface-mounted package with reverse pinning, which facilitates easy mounting and integration into various circuits.
  10. Is the BF1212WR,115 suitable for low-frequency applications? The BF1212WR,115 is primarily designed for high-frequency applications and may not be the best choice for low-frequency uses.

Product Attributes

Transistor Type:N-Channel Dual Gate
Frequency:400MHz
Gain:30dB
Voltage - Test:5 V
Current Rating (Amps):30mA
Noise Figure:0.9dB
Current - Test:12 mA
Power - Output:- 
Voltage - Rated:6 V
Package / Case:SC-82A, SOT-343
Supplier Device Package:CMPAK-4
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Same Series
BF1212R,215
BF1212R,215
MOSFET N-CH DUAL GATE 6V SOT143R
BF1212,215
BF1212,215
MOSFET N-CH DUAL GATE 6V SOT143B

Similar Products

Part Number BF1212WR,115 BF1217WR,115 BF1202WR,115 BF1211WR,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate
Frequency 400MHz 400MHz 400MHz 400MHz
Gain 30dB 30dB 30.5dB 29dB
Voltage - Test 5 V 5 V 5 V 5 V
Current Rating (Amps) 30mA 30mA 30mA 30mA
Noise Figure 0.9dB 1dB 0.9dB 0.9dB
Current - Test 12 mA 18 mA 12 mA 15 mA
Power - Output - - - -
Voltage - Rated 6 V 6 V 10 V 6 V
Package / Case SC-82A, SOT-343 SC-82A, SOT-343 SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package CMPAK-4 CMPAK-4 CMPAK-4 CMPAK-4

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