BF1212WR,115
  • Share:

NXP USA Inc. BF1212WR,115

Manufacturer No:
BF1212WR,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH DUAL GATE 6V SOT343R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BF1212WR,115 is an N-channel dual-gate MOSFET produced by NXP USA Inc. This component is designed for high-frequency applications and is packaged in a CMPAK-4 plastic surface-mounted package with reverse pinning. The dual-gate configuration allows for enhanced control over the MOSFET's operation, making it suitable for a variety of RF and microwave applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)6 V
VGS (Gate-Source Voltage)5 V
ID (Drain Current)12 mA
fT (Transition Frequency)400 MHz
PackageCMPAK-4 (plastic surface-mounted package with reverse pinning)
Gain30 dB

Key Features

  • N-channel dual-gate MOSFET for high-frequency applications
  • CMPAK-4 package with reverse pinning for surface mount
  • High transition frequency of 400 MHz
  • High gain of 30 dB
  • Low drain current of 12 mA

Applications

The BF1212WR,115 is primarily used in RF and microwave applications, including but not limited to:

  • RF amplifiers and switches
  • Microwave circuits
  • Wireless communication systems
  • High-frequency signal processing

Q & A

  1. What is the package type of the BF1212WR,115? The BF1212WR,115 is packaged in a CMPAK-4 plastic surface-mounted package with reverse pinning.
  2. What is the maximum drain-source voltage of the BF1212WR,115? The maximum drain-source voltage is 6 V.
  3. What is the transition frequency of the BF1212WR,115? The transition frequency is 400 MHz.
  4. What is the typical gain of the BF1212WR,115? The typical gain is 30 dB.
  5. What is the maximum drain current of the BF1212WR,115? The maximum drain current is 12 mA.
  6. What are the primary applications of the BF1212WR,115? The primary applications include RF amplifiers, microwave circuits, wireless communication systems, and high-frequency signal processing.
  7. Why is the dual-gate configuration useful in the BF1212WR,115? The dual-gate configuration allows for enhanced control over the MOSFET's operation, which is beneficial for high-frequency applications.
  8. Where can I find detailed specifications for the BF1212WR,115? Detailed specifications can be found in the datasheet available on NXP's official website and other electronic component distributors like Digi-Key and Mouser.
  9. What is the significance of the CMPAK-4 package? The CMPAK-4 package is a surface-mounted package with reverse pinning, which facilitates easy mounting and integration into various circuits.
  10. Is the BF1212WR,115 suitable for low-frequency applications? The BF1212WR,115 is primarily designed for high-frequency applications and may not be the best choice for low-frequency uses.

Product Attributes

Transistor Type:N-Channel Dual Gate
Frequency:400MHz
Gain:30dB
Voltage - Test:5 V
Current Rating (Amps):30mA
Noise Figure:0.9dB
Current - Test:12 mA
Power - Output:- 
Voltage - Rated:6 V
Package / Case:SC-82A, SOT-343
Supplier Device Package:CMPAK-4
0 Remaining View Similar

In Stock

-
241

Please send RFQ , we will respond immediately.

Same Series
BF1212WR,115
BF1212WR,115
MOSFET N-CH DUAL GATE 6V SOT343R
BF1212R,215
BF1212R,215
MOSFET N-CH DUAL GATE 6V SOT143R

Similar Products

Part Number BF1212WR,115 BF1217WR,115 BF1202WR,115 BF1211WR,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate
Frequency 400MHz 400MHz 400MHz 400MHz
Gain 30dB 30dB 30.5dB 29dB
Voltage - Test 5 V 5 V 5 V 5 V
Current Rating (Amps) 30mA 30mA 30mA 30mA
Noise Figure 0.9dB 1dB 0.9dB 0.9dB
Current - Test 12 mA 18 mA 12 mA 15 mA
Power - Output - - - -
Voltage - Rated 6 V 6 V 10 V 6 V
Package / Case SC-82A, SOT-343 SC-82A, SOT-343 SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package CMPAK-4 CMPAK-4 CMPAK-4 CMPAK-4

Related Product By Categories

BLF571,112
BLF571,112
Ampleon USA Inc.
RF MOSFET LDMOS 50V SOT467C
BLF8G10LS-300PU
BLF8G10LS-300PU
Ampleon USA Inc.
RF FET LDMOS 65V 20.5DB SOT539B
MMBF5485
MMBF5485
onsemi
JFET N-CH 25V 10MA SOT23
BLF647PSJ
BLF647PSJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
BF998E6327
BF998E6327
Infineon Technologies
BF998 - RF SMALL SIGNAL TRANSIST
A2V07H525-04NR6
A2V07H525-04NR6
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
BLF871,112
BLF871,112
Ampleon USA Inc.
RF FET LDMOS 89V 19DB SOT467C
BLF3G21-30,112
BLF3G21-30,112
Ampleon USA Inc.
RF FET LDMOS 65V 13.5DB SOT467C
BLF2043F,135
BLF2043F,135
Ampleon USA Inc.
RF FET LDMOS 65V 11DB SOT467C
BLF278,112
BLF278,112
Ampleon USA Inc.
RF FET 2 NC 125V 22DB SOT262A1
BLF6G22-45,112
BLF6G22-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
NE5550234-AZ
NE5550234-AZ
CEL
FET RF 30V 900MHZ 3MINIMOLD

Related Product By Brand

MC9S08PL4CTG
MC9S08PL4CTG
NXP USA Inc.
IC MCU 8BIT 4KB FLASH 16TSSOP
MKE16Z64VLF4
MKE16Z64VLF4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 48LQFP
LPC2468FET208K
LPC2468FET208K
NXP USA Inc.
IC MCU 16/32BIT 512KB 208TFBGA
MK40DX256VLK7
MK40DX256VLK7
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 80FQFP
NX3L2267GM,132
NX3L2267GM,132
NXP USA Inc.
IC ANALOG SWITCH SPDT 10XQFN
74LV08D/C4118
74LV08D/C4118
NXP USA Inc.
AND GATE, LV/LV-A/LVX/H SERIES
74HC259PW112
74HC259PW112
NXP USA Inc.
NOW NEXPERIA 74HC259PW - D LATCH
MMPF0100F9AZES
MMPF0100F9AZES
NXP USA Inc.
IC REG CONV I.MX6 12OUT 56QFN
BZV55-C20135
BZV55-C20135
NXP USA Inc.
NOW NEXPERIA BZV55-C20 - ZENER D
MC56F82723VLC557
MC56F82723VLC557
NXP USA Inc.
MICROCONTROLLER, 32-BIT, FLASH,
SA630D/01,118
SA630D/01,118
NXP USA Inc.
IC RF SWITCH SPDT 1GHZ 8SO
MFRC63002HN,551
MFRC63002HN,551
NXP USA Inc.
IC RFID READER 13.56MHZ 32HVQFN