BF1212WR,115
  • Share:

NXP USA Inc. BF1212WR,115

Manufacturer No:
BF1212WR,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH DUAL GATE 6V SOT343R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BF1212WR,115 is an N-channel dual-gate MOSFET produced by NXP USA Inc. This component is designed for high-frequency applications and is packaged in a CMPAK-4 plastic surface-mounted package with reverse pinning. The dual-gate configuration allows for enhanced control over the MOSFET's operation, making it suitable for a variety of RF and microwave applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)6 V
VGS (Gate-Source Voltage)5 V
ID (Drain Current)12 mA
fT (Transition Frequency)400 MHz
PackageCMPAK-4 (plastic surface-mounted package with reverse pinning)
Gain30 dB

Key Features

  • N-channel dual-gate MOSFET for high-frequency applications
  • CMPAK-4 package with reverse pinning for surface mount
  • High transition frequency of 400 MHz
  • High gain of 30 dB
  • Low drain current of 12 mA

Applications

The BF1212WR,115 is primarily used in RF and microwave applications, including but not limited to:

  • RF amplifiers and switches
  • Microwave circuits
  • Wireless communication systems
  • High-frequency signal processing

Q & A

  1. What is the package type of the BF1212WR,115? The BF1212WR,115 is packaged in a CMPAK-4 plastic surface-mounted package with reverse pinning.
  2. What is the maximum drain-source voltage of the BF1212WR,115? The maximum drain-source voltage is 6 V.
  3. What is the transition frequency of the BF1212WR,115? The transition frequency is 400 MHz.
  4. What is the typical gain of the BF1212WR,115? The typical gain is 30 dB.
  5. What is the maximum drain current of the BF1212WR,115? The maximum drain current is 12 mA.
  6. What are the primary applications of the BF1212WR,115? The primary applications include RF amplifiers, microwave circuits, wireless communication systems, and high-frequency signal processing.
  7. Why is the dual-gate configuration useful in the BF1212WR,115? The dual-gate configuration allows for enhanced control over the MOSFET's operation, which is beneficial for high-frequency applications.
  8. Where can I find detailed specifications for the BF1212WR,115? Detailed specifications can be found in the datasheet available on NXP's official website and other electronic component distributors like Digi-Key and Mouser.
  9. What is the significance of the CMPAK-4 package? The CMPAK-4 package is a surface-mounted package with reverse pinning, which facilitates easy mounting and integration into various circuits.
  10. Is the BF1212WR,115 suitable for low-frequency applications? The BF1212WR,115 is primarily designed for high-frequency applications and may not be the best choice for low-frequency uses.

Product Attributes

Transistor Type:N-Channel Dual Gate
Frequency:400MHz
Gain:30dB
Voltage - Test:5 V
Current Rating (Amps):30mA
Noise Figure:0.9dB
Current - Test:12 mA
Power - Output:- 
Voltage - Rated:6 V
Package / Case:SC-82A, SOT-343
Supplier Device Package:CMPAK-4
0 Remaining View Similar

In Stock

-
241

Please send RFQ , we will respond immediately.

Same Series
BF1212R,215
BF1212R,215
MOSFET N-CH DUAL GATE 6V SOT143R
BF1212,215
BF1212,215
MOSFET N-CH DUAL GATE 6V SOT143B

Similar Products

Part Number BF1212WR,115 BF1217WR,115 BF1202WR,115 BF1211WR,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate
Frequency 400MHz 400MHz 400MHz 400MHz
Gain 30dB 30dB 30.5dB 29dB
Voltage - Test 5 V 5 V 5 V 5 V
Current Rating (Amps) 30mA 30mA 30mA 30mA
Noise Figure 0.9dB 1dB 0.9dB 0.9dB
Current - Test 12 mA 18 mA 12 mA 15 mA
Power - Output - - - -
Voltage - Rated 6 V 6 V 10 V 6 V
Package / Case SC-82A, SOT-343 SC-82A, SOT-343 SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package CMPAK-4 CMPAK-4 CMPAK-4 CMPAK-4

Related Product By Categories

BLF184XRU
BLF184XRU
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214A
AFT20P140-4WNR3
AFT20P140-4WNR3
NXP USA Inc.
RF MOSFET LDMOS DL 28V OM780-4
CLF1G0035-100
CLF1G0035-100
Rochester Electronics, LLC
CLF1G0035-100 - 100W BROADBAND R
BLF7G20LS-200,112
BLF7G20LS-200,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF888AS,112
BLF888AS,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539B
PD57006S
PD57006S
STMicroelectronics
FET RF 65V 945MHZ PWRSO-10
BLF6G10S-45,112
BLF6G10S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B
BLF6G27LS-75,118
BLF6G27LS-75,118
Ampleon USA Inc.
RF FET LDMOS 65V SOT502B
BF510,215
BF510,215
NXP USA Inc.
RF MOSFET N-CH JFET 10V TO236AB
BLF7G15LS-300P,112
BLF7G15LS-300P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
NE5550279A-A
NE5550279A-A
CEL
FET RF 30V 900MHZ 79A
MRF8P8300HSR6
MRF8P8300HSR6
NXP USA Inc.
FET RF 2CH 70V 820MHZ NI1230S

Related Product By Brand

74LVC1GX04GW/C4125
74LVC1GX04GW/C4125
NXP USA Inc.
74LVC1GX04GW - CLOCK GENERATOR
LPC1823JET100E
LPC1823JET100E
NXP USA Inc.
IC MCU 32BIT 512KB FLSH 100TFBGA
MC9S08PL4CTG
MC9S08PL4CTG
NXP USA Inc.
IC MCU 8BIT 4KB FLASH 16TSSOP
S9S12P32J0CFTR
S9S12P32J0CFTR
NXP USA Inc.
IC MCU 16BIT 32KB FLASH 48QFN
S912ZVL64F0VLFR
S912ZVL64F0VLFR
NXP USA Inc.
IC MCU 16BIT 64KB FLASH 48LQFP
MK40DX256VLK7
MK40DX256VLK7
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 80FQFP
LPC1764FBD100,551
LPC1764FBD100,551
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 100LQFP
MCIMX6L2EVN10ABR
MCIMX6L2EVN10ABR
NXP USA Inc.
I.MX 6 SERIES 32-BIT MPU ARM CO
74LVC07APW/S505118
74LVC07APW/S505118
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
74AHC595PW/AUJ
74AHC595PW/AUJ
NXP USA Inc.
IC SHIFT REGISTER 8BIT 16-TSSOP
S912ZVMC25F1MKK557
S912ZVMC25F1MKK557
NXP USA Inc.
MICROCONTROLLER, 16-BIT, HCS12 C
LM75ADP/DG,118
LM75ADP/DG,118
NXP USA Inc.
SENSOR DIGITAL -55C-125C 8TSSOP