Overview
The MMRF5014HR5, produced by NXP USA Inc., is a high-performance RF power transistor designed for wideband operation. This device is part of the MMRF5014H series, which utilizes advanced GaN on SiC technology to achieve high power density and decade bandwidth performance. It is optimized for frequencies up to 2700 MHz, making it suitable for a variety of military and industrial applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | 125 | Vdc |
| Gate-Source Voltage (VGS) | –8, 0 | Vdc |
| Operating Voltage (VDD) | 0 to +50 | Vdc |
| Maximum Forward Gate Current (@ TC = 25°C) | 18 | mA |
| Storage Temperature Range | –65 to +150 | °C |
| Case Operating Temperature Range | –55 to +150 | °C |
| Operating Junction Temperature Range | –55 to +225 | °C |
| Absolute Maximum Channel Temperature | 350 | °C |
| Power Gain (Gps) | 17.0 to 20.0 | dB |
| Drain Efficiency (ηD) | 64.3 to 66.8 | % |
| Input Return Loss (IRL) | –12 to –9 | dB |
| Load Mismatch/Ruggedness | > 20:1 at all phase angles |
Key Features
- Advanced GaN on SiC technology offering high power density
- Decade bandwidth performance up to 2700 MHz
- Low thermal resistance
- Input matched for extended wideband performance
- High ruggedness: > 20:1 VSWR
Applications
- Military end-use applications: narrowband and multi-octave wideband amplifiers, radar, jammers, EMC testing
- Commercial applications: public mobile radios, including emergency service radios, industrial, scientific and medical (ISM) devices, wideband laboratory amplifiers, wireless cellular infrastructure
Q & A
- What is the MMRF5014HR5 used for? The MMRF5014HR5 is used in wideband RF amplifiers for military and industrial applications.
- What technology does the MMRF5014HR5 use? It uses advanced GaN on SiC technology.
- What is the frequency range of the MMRF5014HR5? It operates up to 2700 MHz.
- What is the maximum drain-source voltage of the MMRF5014HR5? The maximum drain-source voltage is 125 Vdc.
- What are the typical applications of the MMRF5014HR5 in the military sector? Typical applications include narrowband and multi-octave wideband amplifiers, radar, jammers, and EMC testing.
- Can the MMRF5014HR5 be used in commercial applications? Yes, it is suitable for public mobile radios, ISM devices, wideband laboratory amplifiers, and wireless cellular infrastructure.
- What is the power gain of the MMRF5014HR5? The power gain is between 17.0 and 20.0 dB.
- How rugged is the MMRF5014HR5? It has a high ruggedness with a VSWR of > 20:1 at all phase angles.
- What is the correct biasing sequence for the MMRF5014HR5? The correct sequence involves setting VGS to –5 V, turning on VDS to the nominal supply voltage, increasing VGS until IDS current is attained, and then applying RF input power. For turning off, the sequence is reversed.
- What is the operating junction temperature range of the MMRF5014HR5? The operating junction temperature range is –55 to +225°C.
