Overview
The PD55008-E is a high-performance, common source N-channel, enhancement-mode lateral field-effect RF power transistor designed by STMicroelectronics. This device is part of the LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology family and is optimized for high gain and broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz, making it an ideal solution for various RF applications, including car mobile radio.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VBRDSS) | 40 | V |
| Gate-source voltage (VGS) | ± 20 | V |
| Drain current (ID) | 4 | A |
| Power dissipation (PDISS) @ TC = 70°C | 52.8 | W |
| Max. operating junction temperature (TJ) | 165 | °C |
| Storage temperature (TSTG) | -65 to +150 | °C |
| Junction-case thermal resistance (RthJC) | 1.8 | °C/W |
| Output power (POUT) @ VDD = 12.5 V, f = 500 MHz | 8 | W |
| Power gain (GP) @ VDD = 12.5 V, POUT = 8 W, f = 500 MHz | 15 - 17 | dB |
Key Features
- Excellent thermal stability: Ensures reliable operation over a wide temperature range.
- Common source configuration: Suitable for various RF amplifier designs.
- High gain and linearity: Ideal for applications requiring high performance and reliability.
- PowerSO-10RF package: The first true SMD plastic RF power package, offering high reliability and ease of assembly.
- High power dissipation: Up to 52.8 W at TC = 70°C.
- Wide frequency range: Operates up to 1 GHz.
Applications
- Car mobile radio: Due to its superior linearity performance, it is an ideal solution for car mobile radio applications.
- Commercial and industrial RF applications: Suitable for various high-frequency applications requiring high gain and reliability.
- RF amplifiers: Can be used in the design of RF amplifiers for different frequency bands.
Q & A
- What is the maximum drain-source voltage for the PD55008-E?
The maximum drain-source voltage (VBRDSS) is 40 V.
- What is the typical power gain of the PD55008-E at 500 MHz?
The typical power gain (GP) at VDD = 12.5 V and POUT = 8 W is between 15 and 17 dB.
- What is the maximum operating junction temperature for the PD55008-E?
The maximum operating junction temperature (TJ) is 165°C.
- What type of package does the PD55008-E come in?
The PD55008-E comes in the PowerSO-10RF package, which is the first true SMD plastic RF power package.
- What are the key features of the PD55008-E?
The key features include excellent thermal stability, common source configuration, high gain and linearity, and high power dissipation.
- What are the typical applications of the PD55008-E?
The typical applications include car mobile radio, commercial and industrial RF applications, and RF amplifiers.
- What is the maximum drain current for the PD55008-E?
The maximum drain current (ID) is 4 A.
- What is the storage temperature range for the PD55008-E?
The storage temperature range (TSTG) is -65 to +150°C.
- What is the junction-case thermal resistance for the PD55008-E?
The junction-case thermal resistance (RthJC) is 1.8°C/W.
- What is the output power of the PD55008-E at 500 MHz?
The output power (POUT) at VDD = 12.5 V and f = 500 MHz is 8 W.
