AFT05MS004NT1
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NXP USA Inc. AFT05MS004NT1

Manufacturer No:
AFT05MS004NT1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 30V 520MHZ PLD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The AFT05MS004NT1 is a high-performance RF power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor designed and manufactured by NXP USA Inc. This component is specifically tailored for handheld two-way radio applications, operating across a wide frequency range from 136 to 941 MHz. It is known for its high gain, ruggedness, and wideband performance, making it an ideal choice for various RF power amplifier applications.

Key Specifications

ParameterValue
ManufacturerNXP USA Inc.
Part NumberAFT05MS004NT1
Transistor TypeLDMOS
Package / CasePLD (Plastic Leaded Device)
Voltage - Rated30V
Frequency Operation136-941 MHz
Power - Output- (Typically used in high-power RF applications)
Gain- (High gain, specific values depend on frequency and test conditions)

Key Features

  • High Gain and Wideband Performance: The AFT05MS004NT1 offers high gain across a broad frequency range, making it suitable for various RF power amplifier applications.
  • Ruggedness: Designed to be robust and reliable, this transistor can withstand the demands of handheld two-way radio environments.
  • LDMOS Technology: Utilizes Laterally Diffused Metal Oxide Semiconductor technology for efficient power output and high performance.
  • Wide Frequency Range: Operates from 136 to 941 MHz, covering both VHF and UHF bands.

Applications

The AFT05MS004NT1 is primarily designed for handheld two-way radio applications. It is also suitable for other RF power amplifier uses where high gain and wideband performance are required, such as in communication systems, wireless infrastructure, and other high-power RF devices.

Q & A

  1. What is the primary application of the AFT05MS004NT1? The primary application is for handheld two-way radio systems.
  2. What frequency range does the AFT05MS004NT1 operate in? It operates from 136 to 941 MHz.
  3. What type of transistor is the AFT05MS004NT1? It is an LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor.
  4. What is the rated voltage of the AFT05MS004NT1? The rated voltage is 30V.
  5. What are the key features of the AFT05MS004NT1? High gain, wideband performance, ruggedness, and LDMOS technology.
  6. Where can I find detailed specifications for the AFT05MS004NT1? Detailed specifications can be found on the NXP Semiconductors website, as well as on distributor sites like Digi-Key and Mouser Electronics.
  7. Is the AFT05MS004NT1 RoHS compliant? Yes, it is lead-free and RoHS compliant.
  8. What package type does the AFT05MS004NT1 come in? It comes in a PLD (Plastic Leaded Device) package.
  9. What is the typical power output of the AFT05MS004NT1? The specific power output can vary based on the application and test conditions, but it is designed for high-power RF applications.
  10. Can the AFT05MS004NT1 be used in high-risk activities? No, it is not designed for incorporation into products intended for use in hazardous or life-threatening environments.

Product Attributes

Transistor Type:LDMOS
Frequency:520MHz
Gain:20.9dB
Voltage - Test:7.5 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:100 mA
Power - Output:4.9W
Voltage - Rated:30 V
Package / Case:TO-243AA
Supplier Device Package:SOT-89A
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Similar Products

Part Number AFT05MS004NT1 AFT05MS006NT1 AFT05MS003NT1
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Not For New Designs Obsolete
Transistor Type LDMOS LDMOS LDMOS
Frequency 520MHz 520MHz 520MHz
Gain 20.9dB 18.3dB 20.8dB
Voltage - Test 7.5 V 7.5 V 7.5 V
Current Rating (Amps) - - -
Noise Figure - - -
Current - Test 100 mA 100 mA 100 mA
Power - Output 4.9W 6W 3W
Voltage - Rated 30 V 30 V 30 V
Package / Case TO-243AA PLD-1.5W TO-243AA
Supplier Device Package SOT-89A PLD-1.5W SOT-89A

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