Overview
The NE5550279A-A is a Silicon Power LDMOS FET manufactured by California Eastern Labs (CEL). This device is designed for high-power RF applications, offering superior performance in terms of output power and efficiency. The NE5550279A-A is particularly suited for use in wireless communication systems, radar, and other high-frequency applications.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Type | LDMOS |
| Package / Case | 4-SMD, Flat Leads (79A) |
| Voltage - Rated | 30 V |
| Current Rating | 600 mA |
| Power - Output | 33 dBm (Typ.) |
| Gain | 22.5 dB (Typ.) |
| Power Added Efficiency (PAE) | 68% (Typ.) |
| Frequency | 900 MHz |
| Operating Temperature | - (Not specified, but typically within standard semiconductor operating ranges) |
Key Features
- High output power: 33 dBm typical at 7.5 V and 40 mA current.
- High power added efficiency: 68% typical.
- High gain: 22.5 dB typical.
- LDMOS technology for high reliability and performance.
- Compact 4-SMD package with flat leads (79A) for efficient heat dissipation and space-saving design.
Applications
- Wireless communication systems (e.g., cellular base stations, wireless local area networks).
- Radar systems.
- High-frequency amplifiers.
- Broadcasting and telecommunications equipment.
- Industrial and medical RF applications.
Q & A
- What is the NE5550279A-A used for?
The NE5550279A-A is used in high-power RF applications such as wireless communication systems, radar, and high-frequency amplifiers.
- What is the typical output power of the NE5550279A-A?
The typical output power is 33 dBm at 7.5 V and 40 mA current.
- What is the power added efficiency (PAE) of the NE5550279A-A?
The PAE is typically 68%.
- What is the gain of the NE5550279A-A?
The gain is typically 22.5 dB.
- What package type does the NE5550279A-A come in?
The NE5550279A-A comes in a 4-SMD package with flat leads (79A).
- What is the rated voltage for the NE5550279A-A?
The rated voltage is 30 V.
- What is the current rating for the NE5550279A-A?
The current rating is 600 mA.
- At what frequency does the NE5550279A-A operate?
The NE5550279A-A operates at a frequency of 900 MHz.
- Is the NE5550279A-A suitable for high-temperature applications?
While specific temperature ranges are not detailed, it is generally suitable for standard semiconductor operating temperatures.
- Where can I find more detailed specifications for the NE5550279A-A?
You can find detailed specifications in the datasheet available from the manufacturer's website or through authorized distributors.
