Overview
The BLF7G22LS-200,118 is a 200 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for base station applications. This transistor operates within the frequency range of 2110 MHz to 2170 MHz, making it suitable for W-CDMA base stations and multicarrier applications. Although this product has been discontinued, it remains relevant for understanding high-performance RF power amplifiers.
Key Specifications
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| f range | frequency range | - | 2110 | - | 2170 | MHz |
| P L(3dB) | nominal output power at 3 dB gain compression | Test signal: 2-c W-CDMA | - | 200 | - | W |
| G p | power gain | P L(AV) = 55 W; V DS = 28 V | 16.8 | 18.5 | - | dB |
| RL in | input return loss | P L(AV) = 55 W; V DS = 28 V; I Dq = 1620 mA | -15 | -6 | - | dB |
| η D | drain efficiency | P L(AV) = 55 W; V DS = 28 V; I Dq = 1620 mA | 27 | 31 | - | % |
| P L(AV) | average output power | - | - | 55 | - | W |
| ACPR | adjacent channel power ratio | P L(AV) = 55 W; V DS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; I Dq = 1620 mA | -31 | -25.5 | - | dBc |
Key Features
- Excellent Ruggedness: Designed to withstand harsh operating conditions.
- High Efficiency: Achieves high drain efficiency, typically up to 31%.
- Internally Matched: Simplifies the design process by being internally matched for ease of use.
- Integrated ESD Protection: Provides built-in protection against electrostatic discharge.
- Low Memory Effects: Ensures excellent pre-distortability, crucial for linear amplification.
- Low Rth: Offers excellent thermal stability due to low thermal resistance.
- Compliance with RoHS Directive: Compliant to Directive 2002/95/EC, regarding the Restriction of Hazardous Substances.
Applications
- RF Power Amplifiers for W-CDMA Base Stations: Optimized for use in W-CDMA base stations within the 2110 MHz to 2170 MHz frequency range.
- Multicarrier Applications: Suitable for multicarrier applications in the specified frequency range.
Q & A
- What is the frequency range of the BLF7G22LS-200,118 transistor?
The frequency range is from 2110 MHz to 2170 MHz.
- What is the nominal output power at 3 dB gain compression?
The nominal output power at 3 dB gain compression is 200 W.
- What is the typical power gain of the transistor?
The typical power gain is 18.5 dB.
- What is the drain efficiency of the transistor?
The drain efficiency is typically up to 31%.
- Is the transistor internally matched?
Yes, the transistor is internally matched for ease of use.
- Does the transistor have integrated ESD protection?
Yes, it has integrated ESD protection.
- What are the primary applications of the BLF7G22LS-200,118 transistor?
The primary applications include RF power amplifiers for W-CDMA base stations and multicarrier applications.
- Is the BLF7G22LS-200,118 transistor compliant with RoHS Directive?
Yes, it is compliant with Directive 2002/95/EC regarding the Restriction of Hazardous Substances.
- What is the status of the BLF7G22LS-200,118 transistor?
The product has been discontinued.
- What package type is the BLF7G22LS-200,118 transistor available in?
The transistor is available in the SOT502B package.
