Overview
The BLF6G10LS-200RN is a high-power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor designed and manufactured by Ampleon USA Inc. This device is specifically tailored for use in base station applications, particularly in the frequency range of 700 MHz to 1000 MHz. It is well-suited for various mobile broadband technologies such as GSM, GSM EDGE, W-CDMA, and CDMA.
Key Specifications
| Parameter | Value |
|---|---|
| Maximum Power Dissipation (Pd) | 200 W |
| Maximum Drain-Source Voltage (|Vds|) | 28 V |
| Maximum Gate-Threshold Voltage (|Vgs(th)|) | 2.4 V |
| Maximum Drain Current (|Id|) | 49 A |
| Drain-Source On-State Resistance (Rds) | 0.07 Ohm |
| Frequency Range | 700 MHz to 1000 MHz |
| Gain | 20 dB |
| Package | SOT502A |
Key Features
- High-power LDMOS transistor with a maximum power dissipation of 200 W.
- Operates in the frequency range of 700 MHz to 1000 MHz, making it suitable for various mobile broadband applications.
- High gain of 20 dB.
- Low drain-source on-state resistance of 0.07 Ohm.
- N-Channel LDMOS transistor.
- Robust SOT502A package.
Applications
The BLF6G10LS-200RN is primarily used in base station applications for mobile broadband technologies. It is suitable for:
- GSM and GSM EDGE base stations.
- W-CDMA and CDMA base stations.
- Multicarrier applications within the 700 MHz to 1000 MHz frequency range.
Q & A
- What is the maximum power dissipation of the BLF6G10LS-200RN?
The maximum power dissipation is 200 W. - What is the operating frequency range of the BLF6G10LS-200RN?
The operating frequency range is from 700 MHz to 1000 MHz. - What is the maximum drain-source voltage for the BLF6G10LS-200RN?
The maximum drain-source voltage is 28 V. - What is the gain of the BLF6G10LS-200RN?
The gain is 20 dB. - What type of transistor is the BLF6G10LS-200RN?
The BLF6G10LS-200RN is an N-Channel LDMOS transistor. - What is the package type of the BLF6G10LS-200RN?
The package type is SOT502A. - What are the typical applications of the BLF6G10LS-200RN?
Typical applications include GSM, GSM EDGE, W-CDMA, and CDMA base stations, as well as multicarrier applications within the specified frequency range. - What is the maximum drain current of the BLF6G10LS-200RN?
The maximum drain current is 49 A. - What is the drain-source on-state resistance of the BLF6G10LS-200RN?
The drain-source on-state resistance is 0.07 Ohm. - Who is the manufacturer of the BLF6G10LS-200RN?
The manufacturer is Ampleon USA Inc.
