2SK3557-7-TB-E
  • Share:

onsemi 2SK3557-7-TB-E

Manufacturer No:
2SK3557-7-TB-E
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
RF MOSFET N-CH JFET 5V 3CP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2SK3557-7-TB-E is an N-Channel Junction Field Effect Transistor (JFET) manufactured by onsemi. This device is designed primarily for amplification and is known for its ultrasmall-sized package, which allows for the creation of smaller and slimmer electronic sets. It features an ultralow noise figure, making it suitable for applications requiring low noise performance.

Key Specifications

Attribute Value Unit
FET Type N-Ch
Drain Current (ID) 50 mA
Drain-to-Source Voltage (Vdss) 15 V
Configuration Single
Power Dissipation (PD) 200 mW
Operating Temperature Range -55°C to +150°C
Storage Temperature Range -55°C to +150°C
Number of Terminals 3
Moisture Sensitivity Level 1
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount
Gate Cutoff Current (IGSS) -1.0 nA
Cutoff Voltage (VGS(off)) -0.3 to -1.5 V
Drain Current (IDSS) 16 to 32 mA
Forward Transfer Admittance (|yfs|) 24 to 35 mS
Input Capacitance (Ciss) 10.0 pF
Reverse Transfer Capacitance (Crss) 2.9 pF
Noise Figure (NF) 1.0 dB

Key Features

  • Ultrasmall-sized Package: The SOT-23 package allows for smaller and slimmer electronic sets.
  • Ultralow Noise Figure: Ideal for applications requiring low noise performance.
  • Large Forward Transfer Admittance (|yfs|): Ranges from 24 to 35 mS, enhancing the device's amplification capabilities.
  • Small Input Capacitance (Ciss): 10.0 pF, contributing to better high-frequency performance.
  • Pb-Free: Compliant with lead-free requirements, making it environmentally friendly.

Applications

  • AM Tuner RF Amplification: Suitable for radio frequency amplification in AM tuners.
  • Low Noise Amplifier: Ideal for applications requiring low noise amplification.

Q & A

  1. What is the 2SK3557-7-TB-E?

    The 2SK3557-7-TB-E is an N-Channel Junction Field Effect Transistor (JFET) manufactured by onsemi.

  2. What is the maximum drain-to-source voltage (Vdss) of the 2SK3557-7-TB-E?

    The maximum drain-to-source voltage (Vdss) is 15 V.

  3. What is the operating temperature range of the 2SK3557-7-TB-E?

    The operating temperature range is -55°C to +150°C.

  4. What is the package style of the 2SK3557-7-TB-E?

    The package style is SOT-23 (SC-59, TO-236).

  5. What is the typical forward transfer admittance (|yfs|) of the 2SK3557-7-TB-E?

    The typical forward transfer admittance (|yfs|) ranges from 24 to 35 mS.

  6. What is the noise figure (NF) of the 2SK3557-7-TB-E?

    The noise figure (NF) is approximately 1.0 dB.

  7. Is the 2SK3557-7-TB-E Pb-Free?
  8. What are the typical applications of the 2SK3557-7-TB-E?

    Typical applications include AM tuner RF amplification and low noise amplifiers.

  9. What is the maximum power dissipation (PD) of the 2SK3557-7-TB-E?

    The maximum power dissipation (PD) is 200 mW.

  10. What is the storage temperature range of the 2SK3557-7-TB-E?

    The storage temperature range is -55°C to +150°C.

Product Attributes

Transistor Type:N-Channel JFET
Frequency:1kHz
Gain:- 
Voltage - Test:5 V
Current Rating (Amps):50mA
Noise Figure:1dB
Current - Test:1 mA
Power - Output:- 
Voltage - Rated:15 V
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:3-CP
0 Remaining View Similar

In Stock

$0.48
1,370

Please send RFQ , we will respond immediately.

Same Series
2SK3557-6-TB-E
2SK3557-6-TB-E
RF MOSFET N-CH JFET 5V 3CP

Similar Products

Part Number 2SK3557-7-TB-E 2SK3557-6-TB-E
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type N-Channel JFET N-Channel JFET
Frequency 1kHz 1kHz
Gain - -
Voltage - Test 5 V 5 V
Current Rating (Amps) 50mA 50mA
Noise Figure 1dB 1dB
Current - Test 1 mA 1 mA
Power - Output - 200mW
Voltage - Rated 15 V 15 V
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package 3-CP 3-CP

Related Product By Categories

AFT20S015GNR1
AFT20S015GNR1
NXP USA Inc.
FET RF 65V 2.17GHZ TO270-2G
AFT09MS007NT1
AFT09MS007NT1
NXP USA Inc.
FET RF 30V 870MHZ PLD1.5W
BLF8G22LS-220J
BLF8G22LS-220J
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BLF888AS,112
BLF888AS,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539B
BF998E6327
BF998E6327
Infineon Technologies
BF998 - RF SMALL SIGNAL TRANSIST
AFT27S012NT1
AFT27S012NT1
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
CLF1G0035-100H
CLF1G0035-100H
Ampleon USA Inc.
CLF1G0035-100 - 100W BROADBAND R
BF909R,215
BF909R,215
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143
BF511,215
BF511,215
NXP USA Inc.
JFET N-CH 20V 30MA SOT23
BLF6G22LS-130,118
BLF6G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
NE5550234-T1-AZ
NE5550234-T1-AZ
CEL
FET RF 30V 900MHZ 3MINIMOLD
BLF6G27LS-40PHJ
BLF6G27LS-40PHJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
SMMUN2216LT1G
SMMUN2216LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
NCP1377DR2G
NCP1377DR2G
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD