2SK3557-7-TB-E
  • Share:

onsemi 2SK3557-7-TB-E

Manufacturer No:
2SK3557-7-TB-E
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
RF MOSFET N-CH JFET 5V 3CP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2SK3557-7-TB-E is an N-Channel Junction Field Effect Transistor (JFET) manufactured by onsemi. This device is designed primarily for amplification and is known for its ultrasmall-sized package, which allows for the creation of smaller and slimmer electronic sets. It features an ultralow noise figure, making it suitable for applications requiring low noise performance.

Key Specifications

Attribute Value Unit
FET Type N-Ch
Drain Current (ID) 50 mA
Drain-to-Source Voltage (Vdss) 15 V
Configuration Single
Power Dissipation (PD) 200 mW
Operating Temperature Range -55°C to +150°C
Storage Temperature Range -55°C to +150°C
Number of Terminals 3
Moisture Sensitivity Level 1
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount
Gate Cutoff Current (IGSS) -1.0 nA
Cutoff Voltage (VGS(off)) -0.3 to -1.5 V
Drain Current (IDSS) 16 to 32 mA
Forward Transfer Admittance (|yfs|) 24 to 35 mS
Input Capacitance (Ciss) 10.0 pF
Reverse Transfer Capacitance (Crss) 2.9 pF
Noise Figure (NF) 1.0 dB

Key Features

  • Ultrasmall-sized Package: The SOT-23 package allows for smaller and slimmer electronic sets.
  • Ultralow Noise Figure: Ideal for applications requiring low noise performance.
  • Large Forward Transfer Admittance (|yfs|): Ranges from 24 to 35 mS, enhancing the device's amplification capabilities.
  • Small Input Capacitance (Ciss): 10.0 pF, contributing to better high-frequency performance.
  • Pb-Free: Compliant with lead-free requirements, making it environmentally friendly.

Applications

  • AM Tuner RF Amplification: Suitable for radio frequency amplification in AM tuners.
  • Low Noise Amplifier: Ideal for applications requiring low noise amplification.

Q & A

  1. What is the 2SK3557-7-TB-E?

    The 2SK3557-7-TB-E is an N-Channel Junction Field Effect Transistor (JFET) manufactured by onsemi.

  2. What is the maximum drain-to-source voltage (Vdss) of the 2SK3557-7-TB-E?

    The maximum drain-to-source voltage (Vdss) is 15 V.

  3. What is the operating temperature range of the 2SK3557-7-TB-E?

    The operating temperature range is -55°C to +150°C.

  4. What is the package style of the 2SK3557-7-TB-E?

    The package style is SOT-23 (SC-59, TO-236).

  5. What is the typical forward transfer admittance (|yfs|) of the 2SK3557-7-TB-E?

    The typical forward transfer admittance (|yfs|) ranges from 24 to 35 mS.

  6. What is the noise figure (NF) of the 2SK3557-7-TB-E?

    The noise figure (NF) is approximately 1.0 dB.

  7. Is the 2SK3557-7-TB-E Pb-Free?
  8. What are the typical applications of the 2SK3557-7-TB-E?

    Typical applications include AM tuner RF amplification and low noise amplifiers.

  9. What is the maximum power dissipation (PD) of the 2SK3557-7-TB-E?

    The maximum power dissipation (PD) is 200 mW.

  10. What is the storage temperature range of the 2SK3557-7-TB-E?

    The storage temperature range is -55°C to +150°C.

Product Attributes

Transistor Type:N-Channel JFET
Frequency:1kHz
Gain:- 
Voltage - Test:5 V
Current Rating (Amps):50mA
Noise Figure:1dB
Current - Test:1 mA
Power - Output:- 
Voltage - Rated:15 V
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:3-CP
0 Remaining View Similar

In Stock

$0.48
1,370

Please send RFQ , we will respond immediately.

Same Series
2SK3557-7-TB-E
2SK3557-7-TB-E
RF MOSFET N-CH JFET 5V 3CP

Similar Products

Part Number 2SK3557-7-TB-E 2SK3557-6-TB-E
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type N-Channel JFET N-Channel JFET
Frequency 1kHz 1kHz
Gain - -
Voltage - Test 5 V 5 V
Current Rating (Amps) 50mA 50mA
Noise Figure 1dB 1dB
Current - Test 1 mA 1 mA
Power - Output - 200mW
Voltage - Rated 15 V 15 V
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package 3-CP 3-CP

Related Product By Categories

BLF7G20LS-90P,112
BLF7G20LS-90P,112
NXP USA Inc.
RF PFET, 2-ELEMENT, L BAND, SILI
CLF1G0035-100PU
CLF1G0035-100PU
Ampleon USA Inc.
RF MOSFET HEMT 50V LDMOST
SD2931-10W
SD2931-10W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M174
PD54008L-E
PD54008L-E
STMicroelectronics
TRANSISTOR RF 5X5 POWERFLAT
BLF888AS,112
BLF888AS,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539B
BLA6H0912-500,112
BLA6H0912-500,112
Ampleon USA Inc.
RF FET LDMOS 100V 17DB SOT634A
A3T18H400W23SR6
A3T18H400W23SR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
BF909AR,215
BF909AR,215
NXP USA Inc.
MOSFET N-CH SOT-143R
BF545C,215
BF545C,215
NXP USA Inc.
JFET N-CH 30V 25MA SOT23
NE5550979A-A
NE5550979A-A
CEL
FET RF 30V 900MHZ 79A-PKG
BLF6G10S-45K,112
BLF6G10S-45K,112
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B
BF861B
BF861B
NXP USA Inc.
SMALL SIGNAL FIELD-EFFECT TRANSI

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
NSS60600MZ4T3G
NSS60600MZ4T3G
onsemi
TRANS PNP 60V 6A SOT223
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
MC74HC138ADT
MC74HC138ADT
onsemi
DECODER/DRIVER, HC/UH SERIES
LB1936V-TLM-E
LB1936V-TLM-E
onsemi
IC MTR DRV BIPLR 2.5-9.5V 16SSOP
NCV7707DQCR2G
NCV7707DQCR2G
onsemi
IC DOOR MODULE DRIVER 36SSOP