2SK3557-7-TB-E
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onsemi 2SK3557-7-TB-E

Manufacturer No:
2SK3557-7-TB-E
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
RF MOSFET N-CH JFET 5V 3CP
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The 2SK3557-7-TB-E is an N-Channel Junction Field Effect Transistor (JFET) manufactured by onsemi. This device is designed primarily for amplification and is known for its ultrasmall-sized package, which allows for the creation of smaller and slimmer electronic sets. It features an ultralow noise figure, making it suitable for applications requiring low noise performance.

Key Specifications

Attribute Value Unit
FET Type N-Ch
Drain Current (ID) 50 mA
Drain-to-Source Voltage (Vdss) 15 V
Configuration Single
Power Dissipation (PD) 200 mW
Operating Temperature Range -55°C to +150°C
Storage Temperature Range -55°C to +150°C
Number of Terminals 3
Moisture Sensitivity Level 1
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount
Gate Cutoff Current (IGSS) -1.0 nA
Cutoff Voltage (VGS(off)) -0.3 to -1.5 V
Drain Current (IDSS) 16 to 32 mA
Forward Transfer Admittance (|yfs|) 24 to 35 mS
Input Capacitance (Ciss) 10.0 pF
Reverse Transfer Capacitance (Crss) 2.9 pF
Noise Figure (NF) 1.0 dB

Key Features

  • Ultrasmall-sized Package: The SOT-23 package allows for smaller and slimmer electronic sets.
  • Ultralow Noise Figure: Ideal for applications requiring low noise performance.
  • Large Forward Transfer Admittance (|yfs|): Ranges from 24 to 35 mS, enhancing the device's amplification capabilities.
  • Small Input Capacitance (Ciss): 10.0 pF, contributing to better high-frequency performance.
  • Pb-Free: Compliant with lead-free requirements, making it environmentally friendly.

Applications

  • AM Tuner RF Amplification: Suitable for radio frequency amplification in AM tuners.
  • Low Noise Amplifier: Ideal for applications requiring low noise amplification.

Q & A

  1. What is the 2SK3557-7-TB-E?

    The 2SK3557-7-TB-E is an N-Channel Junction Field Effect Transistor (JFET) manufactured by onsemi.

  2. What is the maximum drain-to-source voltage (Vdss) of the 2SK3557-7-TB-E?

    The maximum drain-to-source voltage (Vdss) is 15 V.

  3. What is the operating temperature range of the 2SK3557-7-TB-E?

    The operating temperature range is -55°C to +150°C.

  4. What is the package style of the 2SK3557-7-TB-E?

    The package style is SOT-23 (SC-59, TO-236).

  5. What is the typical forward transfer admittance (|yfs|) of the 2SK3557-7-TB-E?

    The typical forward transfer admittance (|yfs|) ranges from 24 to 35 mS.

  6. What is the noise figure (NF) of the 2SK3557-7-TB-E?

    The noise figure (NF) is approximately 1.0 dB.

  7. Is the 2SK3557-7-TB-E Pb-Free?
  8. What are the typical applications of the 2SK3557-7-TB-E?

    Typical applications include AM tuner RF amplification and low noise amplifiers.

  9. What is the maximum power dissipation (PD) of the 2SK3557-7-TB-E?

    The maximum power dissipation (PD) is 200 mW.

  10. What is the storage temperature range of the 2SK3557-7-TB-E?

    The storage temperature range is -55°C to +150°C.

Product Attributes

Transistor Type:N-Channel JFET
Frequency:1kHz
Gain:- 
Voltage - Test:5 V
Current Rating (Amps):50mA
Noise Figure:1dB
Current - Test:1 mA
Power - Output:- 
Voltage - Rated:15 V
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:3-CP
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Same Series
2SK3557-7-TB-E
2SK3557-7-TB-E
RF MOSFET N-CH JFET 5V 3CP

Similar Products

Part Number 2SK3557-7-TB-E 2SK3557-6-TB-E
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type N-Channel JFET N-Channel JFET
Frequency 1kHz 1kHz
Gain - -
Voltage - Test 5 V 5 V
Current Rating (Amps) 50mA 50mA
Noise Figure 1dB 1dB
Current - Test 1 mA 1 mA
Power - Output - 200mW
Voltage - Rated 15 V 15 V
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package 3-CP 3-CP

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