BF909R,215
  • Share:

NXP USA Inc. BF909R,215

Manufacturer No:
BF909R,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 7V 40MA SOT143
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BF909,215 is an N-channel dual-gate MOSFET manufactured by NXP Semiconductors. This device is specifically designed for use in RF applications, particularly in the VHF and UHF frequency ranges. It is known for its high forward transfer admittance, low noise figure, and superior cross-modulation performance during Automatic Gain Control (AGC). The BF909,215 is packaged in a SOT143B plastic, surface-mounted package, making it suitable for a variety of electronic systems requiring compact and reliable RF components.

Key Specifications

Parameter Conditions Min. Typ. Max. Unit
VDS (Drain-Source Voltage) 7 V
ID (Drain Current) 40 mA
Ptot (Total Power Dissipation) 200 mW
Tj (Operating Junction Temperature) 150 °C
yfs (Forward Transfer Admittance) 36 43 50 mS
Cig1-s (Input Capacitance at Gate 1) 3.6 4.3 pF
Crs (Reverse Transfer Capacitance) f = 1 MHz 35 50 fF
Noise Figure f = 800 MHz 2 2.8 dB

Key Features

  • N-Channel Dual Gate MOSFET: Designed for high performance in RF applications.
  • High Forward Transfer Admittance: Ensures good cross-modulation performance during AGC.
  • Low Noise Figure: Up to 2.8 dB at 800 MHz, making it suitable for low-noise amplifiers.
  • Superior Cross-Modulation Performance: During AGC, ensuring stable and reliable operation.
  • Compact Packaging: SOT143B package, ideal for surface-mounted applications.
  • Wide Supply Voltage Range: Operates with supply voltages from 3 to 7 V.

Applications

  • VHF and UHF Applications: Suitable for television tuners, professional communications equipment, and other RF systems.
  • RF Amplifiers: Used in gain-controlled amplifiers up to 1 GHz.
  • Electronic Devices: Found in various electronic devices such as computers, smartphones, televisions, and medical devices.

Q & A

  1. What is the BF909,215 MOSFET used for?

    The BF909,215 is used in RF applications, particularly in VHF and UHF frequency ranges, such as television tuners and professional communications equipment.

  2. What is the package type of the BF909,215?

    The BF909,215 is packaged in a SOT143B plastic, surface-mounted package.

  3. What is the maximum drain-source voltage for the BF909,215?

    The maximum drain-source voltage is 7 V.

  4. What is the typical forward transfer admittance of the BF909,215?

    The typical forward transfer admittance is 43 mS.

  5. What is the noise figure of the BF909,215 at 800 MHz?

    The noise figure at 800 MHz is up to 2.8 dB.

  6. What is the operating junction temperature range for the BF909,215?

    The operating junction temperature range is up to 150°C.

  7. Is the BF909,215 suitable for low-noise applications?

    Yes, it is suitable for low-noise applications due to its low noise figure.

  8. What are the typical applications of the BF909,215?

    Typical applications include VHF and UHF systems, television tuners, and professional communications equipment.

  9. How does the BF909,215 ensure good cross-modulation performance?

    The BF909,215 ensures good cross-modulation performance during AGC due to its high forward transfer admittance and internal bias circuit.

  10. What is the maximum drain current for the BF909,215?

    The maximum drain current is 40 mA.

Product Attributes

Transistor Type:N-Channel Dual Gate
Frequency:800MHz
Gain:- 
Voltage - Test:5 V
Current Rating (Amps):40mA
Noise Figure:2dB
Current - Test:15 mA
Power - Output:- 
Voltage - Rated:7 V
Package / Case:SOT-143R
Supplier Device Package:SOT-143R
0 Remaining View Similar

In Stock

$0.19
1,795

Please send RFQ , we will respond immediately.

Same Series
BF909A,215
BF909A,215
MOSFET N-CH SOT-143B
BF909AR,215
BF909AR,215
MOSFET N-CH SOT-143R
BF909,235
BF909,235
MOSFET N-CH 7V 40MA SOT143
BF909,215
BF909,215
MOSFET N-CH 7V 40MA SOT143
BF909R,235
BF909R,235
MOSFET N-CH 7V 40MA SOT143

Similar Products

Part Number BF909R,215 BF909R,235 BF904R,215 BF908R,215 BF909,215 BF909A,215 BF909AR,215
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate N-Channel Dual Gate MESFET Dual Gate
Frequency 800MHz 800MHz 200MHz 200MHz 800MHz 800MHz 800MHz
Gain - - - - - - -
Voltage - Test 5 V 5 V 5 V 8 V 5 V - -
Current Rating (Amps) 40mA 40mA 30mA 40mA 40mA 40mA 40mA
Noise Figure 2dB 2dB 1dB 0.6dB 2dB 2dB 2dB
Current - Test 15 mA 15 mA 10 mA 15 mA 15 mA - -
Power - Output - - - - - - -
Voltage - Rated 7 V 7 V 7 V 12 V 7 V 7 V 7 V
Package / Case SOT-143R SOT-143R SOT-143R SOT-143R TO-253-4, TO-253AA TO-253-4, TO-253AA SOT-143R
Supplier Device Package SOT-143R SOT-143R SOT-143R SOT-143R SOT-143B SOT-143B SOT-143R

Related Product By Categories

BLF647P,112
BLF647P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121A
A2I25D025GNR1
A2I25D025GNR1
NXP USA Inc.
IC TRANS RF LDMOS
SD3931-10
SD3931-10
STMicroelectronics
IC RF PWR TRANS HF/VHF/UHF M174
A3G35H100-04SR3
A3G35H100-04SR3
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR
BLF6G10-45,135
BLF6G10-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 22.5DB SOT608A
BLF7G22LS-130,118
BLF7G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF6G21-10G,112
BLF6G21-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BSS83,235
BSS83,235
NXP USA Inc.
MOSFET N-CH 10V 50MA SOT143
BLF647,112
BLF647,112
Ampleon USA Inc.
RF FET LDMOS 65V 14.5DB SOT540A
BLF278,112
BLF278,112
Ampleon USA Inc.
RF FET 2 NC 125V 22DB SOT262A1
BLF6G22LS-130,112
BLF6G22LS-130,112
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
MRFE6VP8600HSR5
MRFE6VP8600HSR5
NXP USA Inc.
FET RF 2CH 130V 860MHZ NI1230S

Related Product By Brand

PMEG4030ER/DG/B2,1
PMEG4030ER/DG/B2,1
NXP USA Inc.
PMEG4030ER/DG/B2,1
Z0103MA0,412
Z0103MA0,412
NXP USA Inc.
NOW WEEN - Z0103MA0 - 4 QUADRANT
PMBT3904/8,215
PMBT3904/8,215
NXP USA Inc.
TRANS PNP SWITCHING TO-236AB
AFT09MS007NT1
AFT09MS007NT1
NXP USA Inc.
FET RF 30V 870MHZ PLD1.5W
BF908R,215
BF908R,215
NXP USA Inc.
MOSFET DUAL GATE 12V 40MA SOT143
BUK98150-55A,135
BUK98150-55A,135
NXP USA Inc.
MOSFET N-CH 55V 5.5A SOT-223
LPC11U24FBD48/301,
LPC11U24FBD48/301,
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 48LQFP
74HC02D/AU118
74HC02D/AU118
NXP USA Inc.
IC GATE NOR 4CH 2-INP 14SO
PCA24S08AD
PCA24S08AD
NXP USA Inc.
IC EEPROM 8KBIT 400KHZ 8SO
74LV165DB118
74LV165DB118
NXP USA Inc.
NOW NEXPERIA 74LV165DB - PARALLE
BGU7005/Z/N2115
BGU7005/Z/N2115
NXP USA Inc.
NARROW BAND LOW POWER AMPLIFIER
PN5120A0HN1/C1,118
PN5120A0HN1/C1,118
NXP USA Inc.
IC RFID RDR/TRAN 13.56MZ 32HVQFN