MRF8P8300HSR6
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NXP USA Inc. MRF8P8300HSR6

Manufacturer No:
MRF8P8300HSR6
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 2CH 70V 820MHZ NI1230S
Delivery:
Payment:
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Product Introduction

Overview

The MRF8P8300HSR6 is a high-performance RF power MOSFET designed by NXP USA Inc. for use in W-CDMA and LTE base station applications. This device operates within the frequency range of 750 to 820 MHz, making it suitable for various cellular base station requirements. The MOSFET is known for its robust performance and reliability in high-power RF applications.

Key Specifications

ParameterValue
Frequency Range750 - 820 MHz
Average Power96 W
Drain-Source Voltage (Vds)28 V
Drain Current (Id)2 A
Gain20.9 dB
Package TypeNI-1230S

Key Features

  • High average power output of 96 W, making it suitable for high-power RF applications.
  • Operates in the frequency range of 750 to 820 MHz, ideal for W-CDMA and LTE base stations.
  • Can be used in Class AB and Class C amplifiers for typical cellular base station configurations.
  • Robust and reliable performance in high-power RF environments.

Applications

The MRF8P8300HSR6 is primarily designed for use in W-CDMA and LTE base station applications. It is suitable for various cellular base station configurations, including Class AB and Class C amplifiers. Its high power output and frequency range make it an ideal choice for high-performance RF systems.

Q & A

  1. What is the frequency range of the MRF8P8300HSR6? The frequency range is from 750 to 820 MHz.
  2. What is the average power output of the MRF8P8300HSR6? The average power output is 96 W.
  3. What is the drain-source voltage (Vds) of the MRF8P8300HSR6? The drain-source voltage is 28 V.
  4. What is the drain current (Id) of the MRF8P8300HSR6? The drain current is 2 A.
  5. What is the gain of the MRF8P8300HSR6? The gain is 20.9 dB.
  6. In what package type is the MRF8P8300HSR6 available? It is available in the NI-1230S package type.
  7. What are the primary applications of the MRF8P8300HSR6? The primary applications are W-CDMA and LTE base stations.
  8. Can the MRF8P8300HSR6 be used in Class AB and Class C amplifiers? Yes, it can be used in both Class AB and Class C amplifiers.
  9. Who is the manufacturer of the MRF8P8300HSR6? The manufacturer is NXP USA Inc.
  10. Where can I find detailed specifications for the MRF8P8300HSR6? Detailed specifications can be found on the NXP Semiconductors website and other electronic component distributors like Digi-Key.

Product Attributes

Transistor Type:LDMOS (Dual)
Frequency:820MHz
Gain:20.9dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:2 A
Power - Output:96W
Voltage - Rated:70 V
Package / Case:NI-1230S
Supplier Device Package:NI-1230S
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Similar Products

Part Number MRF8P8300HSR6 MRF8P9300HSR6 MRF8P8300HR6 MRF8P8300HSR5
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Discontinued at Digi-Key
Transistor Type LDMOS (Dual) LDMOS (Dual) LDMOS (Dual) LDMOS (Dual)
Frequency 820MHz 960MHz 820MHz 820MHz
Gain 20.9dB 19.4dB 20.9dB 20.9dB
Voltage - Test 28 V 28 V 28 V 28 V
Current Rating (Amps) - - - -
Noise Figure - - - -
Current - Test 2 A 2.4 A 2 A 2 A
Power - Output 96W 100W 96W 96W
Voltage - Rated 70 V 70 V 70 V 70 V
Package / Case NI-1230S NI-1230S NI-1230 NI-1230S
Supplier Device Package NI-1230S NI-1230S NI-1230 NI-1230S

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