MRF6V12500HR5
  • Share:

NXP USA Inc. MRF6V12500HR5

Manufacturer No:
MRF6V12500HR5
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 110V 1.03GHZ NI-780H
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MRF6V12500HR5 is a high-power RF transistor designed and manufactured by NXP USA Inc. This device is part of the MRF6V12500H series, which includes the MRF6V12500HS and MRF6V12500GS models. It is specifically engineered for applications operating within the frequency range of 960 to 1215 MHz, making it suitable for various high-frequency applications such as distance measuring and other RF power amplification needs.

Key Specifications

Parameter Value Unit
Frequency Range 960 - 1215 MHz
Peak Power 500 Watts
Drain-Source Voltage (VDD) Up to 50 V
Input Power (Pin) Varies with frequency and duty cycle dBm
Output Power (Pout) Up to 500 Watts peak Watts
Pulse Width and Duty Cycle 128 μsec, 10% duty cycle (typical) -
Source and Load Impedance Varies with frequency (e.g., 2.25 - j1.78 Ω at 960 MHz) Ω
Transistor Type LDMOS (Laterally Diffused Metal Oxide Semiconductor) -

Key Features

  • Internally matched for ease of use, reducing the need for external matching components.
  • Qualified up to a maximum of 50 VDD operation, providing high power handling capability.
  • Integrated ESD protection to enhance device reliability.
  • Greater negative gate-source voltage range for improved Class C operation.
  • Capable of handling 10:1 VSWR (Voltage Standing Wave Ratio) at 50 Vdc and 1030 MHz.
  • Characterized with series equivalent large-signal impedance parameters for accurate modeling.

Applications

  • Distance measuring and radar systems.
  • High-frequency RF power amplification in various industrial and military applications.
  • Wireless communication systems requiring high power output.
  • Medical and scientific equipment that need precise RF power control.

Q & A

  1. What is the frequency range of the MRF6V12500HR5?

    The MRF6V12500HR5 operates within the frequency range of 960 to 1215 MHz.

  2. What is the peak power output of the MRF6V12500HR5?

    The peak power output is up to 500 Watts.

  3. What is the maximum drain-source voltage (VDD) for this transistor?

    The maximum VDD is up to 50 V.

  4. Does the MRF6V12500HR5 have integrated ESD protection?
  5. What type of transistor is the MRF6V12500HR5?
  6. Can the MRF6V12500HR5 handle high VSWR?
  7. What are some common applications for the MRF6V12500HR5?
  8. Is the MRF6V12500HR5 internally matched?
  9. What is the typical pulse width and duty cycle for this transistor?
  10. Where can I find design files and models for the MRF6V12500HR5?

Product Attributes

Transistor Type:LDMOS
Frequency:1.03GHz
Gain:19.7dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:200 mA
Power - Output:500W
Voltage - Rated:110 V
Package / Case:SOT-957A
Supplier Device Package:NI-780H-2L
0 Remaining View Similar

In Stock

$817.89
2

Please send RFQ , we will respond immediately.

Same Series
MRF6V12500HSR5
MRF6V12500HSR5
FET RF 110V 1.03GHZ NI-1230H

Similar Products

Part Number MRF6V12500HR5 MRF6V12500HSR5 MRF6V12500HR3
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Discontinued at Digi-Key
Transistor Type LDMOS LDMOS LDMOS
Frequency 1.03GHz 1.03GHz 1.03GHz
Gain 19.7dB 19.7dB 19.7dB
Voltage - Test 50 V 50 V 50 V
Current Rating (Amps) - - -
Noise Figure - - -
Current - Test 200 mA 200 mA 200 mA
Power - Output 500W 500W 500W
Voltage - Rated 110 V 110 V 110 V
Package / Case SOT-957A NI-780S SOT-957A
Supplier Device Package NI-780H-2L NI-780S NI-780H-2L

Related Product By Categories

MRFE6VP100HR5
MRFE6VP100HR5
NXP USA Inc.
RF MOSFET LDMOS 50V NI780-4
MRF300AN
MRF300AN
NXP USA Inc.
RF MOSFET LDMOS 50V TO247
BLF183XRSU
BLF183XRSU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121B
PD55003TR-E
PD55003TR-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BLF888DU
BLF888DU
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
MRFE6VP5150NR1
MRFE6VP5150NR1
NXP USA Inc.
RF MOSFET LDMOS DL 50V TO270
BF909,235
BF909,235
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143
BLF6G27S-45,112
BLF6G27S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF6G27-10G,118
BLF6G27-10G,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF6G27-45,135
BLF6G27-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608A
BLF7G20LS-250P,118
BLF7G20LS-250P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF7G21LS-160P,112
BLF7G21LS-160P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121B

Related Product By Brand

PMEG2005EGW115
PMEG2005EGW115
NXP USA Inc.
NOW NEXPERIA PMEG2005EGW RECTIFI
BC807-25/L215
BC807-25/L215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MKL26Z128VLH4
MKL26Z128VLH4
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
MK40DX256VLK7
MK40DX256VLK7
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 80FQFP
LPC2294HBD144/01,5
LPC2294HBD144/01,5
NXP USA Inc.
IC MCU 16/32B 256KB FLSH 144LQFP
LPC11E67JBD48E
LPC11E67JBD48E
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 48LQFP
74HC259PW112
74HC259PW112
NXP USA Inc.
NOW NEXPERIA 74HC259PW - D LATCH
MC33771BTA1AER2
MC33771BTA1AER2
NXP USA Inc.
14-CHANNEL LI-ION BATTERY CELL C
MMPF0200NPAEP557
MMPF0200NPAEP557
NXP USA Inc.
POWER SUPPLY SUPPORT CIRCUIT AD
BGU7224X
BGU7224X
NXP USA Inc.
IC RF AMP ISM 2.4GHZ 6HXSON
SA605DK,112
SA605DK,112
NXP USA Inc.
RF RX ASK/FSK 0HZ-500MHZ 20SSOP
MPXHZ6115AC6T1
MPXHZ6115AC6T1
NXP USA Inc.
SENSOR ABS PRESS 16.7PSI MAX