MRF6V12500HR5
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NXP USA Inc. MRF6V12500HR5

Manufacturer No:
MRF6V12500HR5
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 110V 1.03GHZ NI-780H
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MRF6V12500HR5 is a high-power RF transistor designed and manufactured by NXP USA Inc. This device is part of the MRF6V12500H series, which includes the MRF6V12500HS and MRF6V12500GS models. It is specifically engineered for applications operating within the frequency range of 960 to 1215 MHz, making it suitable for various high-frequency applications such as distance measuring and other RF power amplification needs.

Key Specifications

Parameter Value Unit
Frequency Range 960 - 1215 MHz
Peak Power 500 Watts
Drain-Source Voltage (VDD) Up to 50 V
Input Power (Pin) Varies with frequency and duty cycle dBm
Output Power (Pout) Up to 500 Watts peak Watts
Pulse Width and Duty Cycle 128 μsec, 10% duty cycle (typical) -
Source and Load Impedance Varies with frequency (e.g., 2.25 - j1.78 Ω at 960 MHz) Ω
Transistor Type LDMOS (Laterally Diffused Metal Oxide Semiconductor) -

Key Features

  • Internally matched for ease of use, reducing the need for external matching components.
  • Qualified up to a maximum of 50 VDD operation, providing high power handling capability.
  • Integrated ESD protection to enhance device reliability.
  • Greater negative gate-source voltage range for improved Class C operation.
  • Capable of handling 10:1 VSWR (Voltage Standing Wave Ratio) at 50 Vdc and 1030 MHz.
  • Characterized with series equivalent large-signal impedance parameters for accurate modeling.

Applications

  • Distance measuring and radar systems.
  • High-frequency RF power amplification in various industrial and military applications.
  • Wireless communication systems requiring high power output.
  • Medical and scientific equipment that need precise RF power control.

Q & A

  1. What is the frequency range of the MRF6V12500HR5?

    The MRF6V12500HR5 operates within the frequency range of 960 to 1215 MHz.

  2. What is the peak power output of the MRF6V12500HR5?

    The peak power output is up to 500 Watts.

  3. What is the maximum drain-source voltage (VDD) for this transistor?

    The maximum VDD is up to 50 V.

  4. Does the MRF6V12500HR5 have integrated ESD protection?
  5. What type of transistor is the MRF6V12500HR5?
  6. Can the MRF6V12500HR5 handle high VSWR?
  7. What are some common applications for the MRF6V12500HR5?
  8. Is the MRF6V12500HR5 internally matched?
  9. What is the typical pulse width and duty cycle for this transistor?
  10. Where can I find design files and models for the MRF6V12500HR5?

Product Attributes

Transistor Type:LDMOS
Frequency:1.03GHz
Gain:19.7dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:200 mA
Power - Output:500W
Voltage - Rated:110 V
Package / Case:SOT-957A
Supplier Device Package:NI-780H-2L
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In Stock

$817.89
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Same Series
MRF6V12500HSR5
MRF6V12500HSR5
FET RF 110V 1.03GHZ NI-1230H

Similar Products

Part Number MRF6V12500HR5 MRF6V12500HSR5 MRF6V12500HR3
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Discontinued at Digi-Key
Transistor Type LDMOS LDMOS LDMOS
Frequency 1.03GHz 1.03GHz 1.03GHz
Gain 19.7dB 19.7dB 19.7dB
Voltage - Test 50 V 50 V 50 V
Current Rating (Amps) - - -
Noise Figure - - -
Current - Test 200 mA 200 mA 200 mA
Power - Output 500W 500W 500W
Voltage - Rated 110 V 110 V 110 V
Package / Case SOT-957A NI-780S SOT-957A
Supplier Device Package NI-780H-2L NI-780S NI-780H-2L

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