MRFE6VP5600HR6
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NXP USA Inc. MRFE6VP5600HR6

Manufacturer No:
MRFE6VP5600HR6
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 2CH 130V 230MHZ NI1230
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MRFE6VP5600HR6 is a high-performance RF power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by NXP USA Inc. This device is designed to operate within the frequency range of 1.8 to 600 MHz and is known for its high ruggedness and reliability. It is particularly suited for applications requiring high power handling and robust performance under various operating conditions.

Key Specifications

ParameterValue
Frequency Range1.8 - 600 MHz
Continuous Wave (CW) Power600 W
Drain-Source Voltage (Vds)50 V
Drain Current (Id)100 mA
Gain25 dB
Package TypeNI-1230-4H

Key Features

  • High ruggedness and reliability
  • High continuous wave (CW) power handling of 600 W
  • Operates over a broad frequency range of 1.8 to 600 MHz
  • Drain-source voltage of 50 V
  • High gain of 25 dB
  • Suitable for high VSWR (Voltage Standing Wave Ratio) applications

Applications

  • Industrial, Scientific, and Medical (ISM) applications
  • Broadcast and mobile radio systems
  • Aerospace applications
  • Laser and plasma exciters
  • High-power RF amplifiers

Q & A

  1. What is the frequency range of the MRFE6VP5600HR6?
    The MRFE6VP5600HR6 operates within the frequency range of 1.8 to 600 MHz.
  2. What is the continuous wave (CW) power handling of the MRFE6VP5600HR6?
    The device can handle 600 W of continuous wave power.
  3. What is the drain-source voltage (Vds) of the MRFE6VP5600HR6?
    The drain-source voltage is 50 V.
  4. What is the typical drain current (Id) of the MRFE6VP5600HR6?
    The typical drain current is 100 mA.
  5. What is the gain of the MRFE6VP5600HR6?
    The gain is 25 dB.
  6. In what package type is the MRFE6VP5600HR6 available?
    The device is available in the NI-1230-4H package type.
  7. What are some of the key applications of the MRFE6VP5600HR6?
    Key applications include ISM, broadcast, aerospace, and high-power RF amplifiers.
  8. Why is the MRFE6VP5600HR6 considered high ruggedness?
    The device is designed to handle high VSWR and is known for its reliability and robust performance under various operating conditions.
  9. Where can I find detailed specifications for the MRFE6VP5600HR6?
    Detailed specifications can be found on NXP's official website, as well as on distributor sites like Digi-Key and Cytech Systems.
  10. What is the significance of the 'HR6' suffix in the part number MRFE6VP5600HR6?
    The 'HR6' suffix indicates the specific package and configuration of the device, which includes high ruggedness features.

Product Attributes

Transistor Type:LDMOS (Dual)
Frequency:230MHz
Gain:25dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:100 mA
Power - Output:600W
Voltage - Rated:130 V
Package / Case:SOT-979A
Supplier Device Package:NI-1230-4H
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Similar Products

Part Number MRFE6VP5600HR6 MRFE6VP8600HR6 MRFE6VP5600HSR6 MRFE6VP5600HR5
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Discontinued at Digi-Key Discontinued at Digi-Key Active
Transistor Type LDMOS (Dual) LDMOS (Dual) LDMOS (Dual) LDMOS (Dual)
Frequency 230MHz 860MHz 230MHz 230MHz
Gain 25dB 19.3dB 25dB 25dB
Voltage - Test 50 V 50 V 50 V 50 V
Current Rating (Amps) - - - -
Noise Figure - - - -
Current - Test 100 mA 1.4 A 100 mA 100 mA
Power - Output 600W 125W 600W 600W
Voltage - Rated 130 V 130 V 130 V 130 V
Package / Case SOT-979A NI-1230 NI-1230-4S SOT-979A
Supplier Device Package NI-1230-4H NI-1230 NI-1230-4S NI-1230-4H

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