MRFE6VP5600HR6
  • Share:

NXP USA Inc. MRFE6VP5600HR6

Manufacturer No:
MRFE6VP5600HR6
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 2CH 130V 230MHZ NI1230
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MRFE6VP5600HR6 is a high-performance RF power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by NXP USA Inc. This device is designed to operate within the frequency range of 1.8 to 600 MHz and is known for its high ruggedness and reliability. It is particularly suited for applications requiring high power handling and robust performance under various operating conditions.

Key Specifications

ParameterValue
Frequency Range1.8 - 600 MHz
Continuous Wave (CW) Power600 W
Drain-Source Voltage (Vds)50 V
Drain Current (Id)100 mA
Gain25 dB
Package TypeNI-1230-4H

Key Features

  • High ruggedness and reliability
  • High continuous wave (CW) power handling of 600 W
  • Operates over a broad frequency range of 1.8 to 600 MHz
  • Drain-source voltage of 50 V
  • High gain of 25 dB
  • Suitable for high VSWR (Voltage Standing Wave Ratio) applications

Applications

  • Industrial, Scientific, and Medical (ISM) applications
  • Broadcast and mobile radio systems
  • Aerospace applications
  • Laser and plasma exciters
  • High-power RF amplifiers

Q & A

  1. What is the frequency range of the MRFE6VP5600HR6?
    The MRFE6VP5600HR6 operates within the frequency range of 1.8 to 600 MHz.
  2. What is the continuous wave (CW) power handling of the MRFE6VP5600HR6?
    The device can handle 600 W of continuous wave power.
  3. What is the drain-source voltage (Vds) of the MRFE6VP5600HR6?
    The drain-source voltage is 50 V.
  4. What is the typical drain current (Id) of the MRFE6VP5600HR6?
    The typical drain current is 100 mA.
  5. What is the gain of the MRFE6VP5600HR6?
    The gain is 25 dB.
  6. In what package type is the MRFE6VP5600HR6 available?
    The device is available in the NI-1230-4H package type.
  7. What are some of the key applications of the MRFE6VP5600HR6?
    Key applications include ISM, broadcast, aerospace, and high-power RF amplifiers.
  8. Why is the MRFE6VP5600HR6 considered high ruggedness?
    The device is designed to handle high VSWR and is known for its reliability and robust performance under various operating conditions.
  9. Where can I find detailed specifications for the MRFE6VP5600HR6?
    Detailed specifications can be found on NXP's official website, as well as on distributor sites like Digi-Key and Cytech Systems.
  10. What is the significance of the 'HR6' suffix in the part number MRFE6VP5600HR6?
    The 'HR6' suffix indicates the specific package and configuration of the device, which includes high ruggedness features.

Product Attributes

Transistor Type:LDMOS (Dual)
Frequency:230MHz
Gain:25dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:100 mA
Power - Output:600W
Voltage - Rated:130 V
Package / Case:SOT-979A
Supplier Device Package:NI-1230-4H
0 Remaining View Similar

In Stock

$169.89
5

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV50
DD15S2S5WV50
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20WES/AA
DD15S20WES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S0TS/AA
DD44S32S0TS/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S5000/AA
DD26S2S5000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JVLS
DD15S20JVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0S
DD15S20Z0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W00
DD26S20W00
CONN D-SUB HD RCPT 26P SLDR CUP
CBC17W2S10HT2S/AA
CBC17W2S10HT2S/AA
CONN D-SUB RCPT 17POS CRIMP

Similar Products

Part Number MRFE6VP5600HR6 MRFE6VP8600HR6 MRFE6VP5600HSR6 MRFE6VP5600HR5
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Discontinued at Digi-Key Discontinued at Digi-Key Active
Transistor Type LDMOS (Dual) LDMOS (Dual) LDMOS (Dual) LDMOS (Dual)
Frequency 230MHz 860MHz 230MHz 230MHz
Gain 25dB 19.3dB 25dB 25dB
Voltage - Test 50 V 50 V 50 V 50 V
Current Rating (Amps) - - - -
Noise Figure - - - -
Current - Test 100 mA 1.4 A 100 mA 100 mA
Power - Output 600W 125W 600W 600W
Voltage - Rated 130 V 130 V 130 V 130 V
Package / Case SOT-979A NI-1230 NI-1230-4S SOT-979A
Supplier Device Package NI-1230-4H NI-1230 NI-1230-4S NI-1230-4H

Related Product By Categories

BLF881S,112
BLF881S,112
Ampleon USA Inc.
RF MOSFET LDMOS 50V LDMOST
BLF6G27LS-75,112
BLF6G27LS-75,112
NXP USA Inc.
RF TRANSISTOR
CLF1G0035-100P
CLF1G0035-100P
NXP USA Inc.
RF SMALL SIGNAL FIELD-EFFECT TRA
BLF278C
BLF278C
Rochester Electronics, LLC
BLF278C - DUAL PUSH-PULL N-CHANN
PD55003-E
PD55003-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
BF998E6327HTSA1
BF998E6327HTSA1
Infineon Technologies
MOSFET N-CH 12V 200MA SOT-143
BLF7G22LS-130,118
BLF7G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BF1211WR,115
BF1211WR,115
NXP USA Inc.
MOSFET N-CH DUAL GATE 6V SOT343R
BLF647,112
BLF647,112
Ampleon USA Inc.
RF FET LDMOS 65V 14.5DB SOT540A
PD57006S
PD57006S
STMicroelectronics
FET RF 65V 945MHZ PWRSO-10
BLF640U
BLF640U
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BLF6G10S-45K,118
BLF6G10S-45K,118
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B

Related Product By Brand

BAP51-02,315
BAP51-02,315
NXP USA Inc.
RF DIODE PIN 60V 715MW SOD523
PMBD914/DG215
PMBD914/DG215
NXP USA Inc.
PMBD914 - RECTIFIER DIODE
ADC1004S030TS/C1'1
ADC1004S030TS/C1'1
NXP USA Inc.
IC ADC 10BIT SIGMA-DELTA 28SSOP
LPC2468FET208K
LPC2468FET208K
NXP USA Inc.
IC MCU 16/32BIT 512KB 208TFBGA
LPC5502JHI48QL
LPC5502JHI48QL
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 48HVQFN
S9S12G48AMLF
S9S12G48AMLF
NXP USA Inc.
IC MCU 16BIT 48KB FLASH 48LQFP
MIMX8QP5AVUFFAB
MIMX8QP5AVUFFAB
NXP USA Inc.
MPU I.MX8 QUAD PLUS
74HC32PW/AUJ
74HC32PW/AUJ
NXP USA Inc.
IC GATE OR 4CH 2-INP 14TSSOP
MMPF0200F6AEP
MMPF0200F6AEP
NXP USA Inc.
IC REG CONV I.MX6 11OUT 56HVQFN
BGU6005115
BGU6005115
NXP USA Inc.
LOW NOISE AMPLIFIER MMIC
SLRC40001T/OFE,112
SLRC40001T/OFE,112
NXP USA Inc.
IC RFID READER 13.56MHZ 32SO
MPXAZ6115AP
MPXAZ6115AP
NXP USA Inc.
PRESSURE SENSOR ABSOLUTE 8-SOP