Overview
The A3G35H100-04SR3 is a high-performance RF power GaN transistor designed by NXP Semiconductors. This device operates within the frequency range of 3400-3600 MHz and is optimized for cellular base station applications, particularly those requiring wide instantaneous bandwidth. It is part of NXP's Airfast RF power GaN transistor family, known for its advanced Doherty configuration and high terminal impedances for optimal broadband performance.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 125 | Vdc |
| Gate-Source Voltage | VGS | –8, 0 | Vdc |
| Operating Voltage | VDD | 0 to +55 | Vdc |
| Maximum Forward Gate Current | IGMAX | 13.4 | mA |
| Storage Temperature Range | Tstg | –65 to +150 | °C |
| Case Operating Temperature Range | TC | –55 to +150 | °C |
| Operating Junction Temperature Range | TJ | –55 to +225 | °C |
| Absolute Maximum Junction Temperature | TMAX | 275 | °C |
| Average Output Power | Pout | 14 | W |
| Frequency Range | f | 3400-3600 | MHz |
Key Features
- High terminal impedances for optimal broadband performance
- Advanced high-performance in-package Doherty configuration
- Able to withstand extremely high output VSWR and broadband operating conditions
- Designed for cellular base station applications requiring very wide instantaneous bandwidth
- Operates at 48 Vdc with a maximum drain-source voltage of 125 Vdc
Applications
The A3G35H100-04SR3 is specifically designed for cellular base station applications, particularly those that require wide instantaneous bandwidth. It is suitable for use in various wireless communication systems, including 4G and 5G base stations, where high power and efficiency are critical.
Q & A
- What is the frequency range of the A3G35H100-04SR3? The frequency range is 3400-3600 MHz.
- What is the average output power of the A3G35H100-04SR3? The average output power is 14 W.
- What is the operating voltage of the A3G35H100-04SR3? The operating voltage is 0 to +55 Vdc.
- What is the maximum drain-source voltage of the A3G35H100-04SR3? The maximum drain-source voltage is 125 Vdc.
- What type of configuration does the A3G35H100-04SR3 use? It uses an advanced high-performance in-package Doherty configuration.
- What are the key features of the A3G35H100-04SR3? High terminal impedances, advanced Doherty configuration, and the ability to withstand high output VSWR and broadband operating conditions.
- What are the typical applications of the A3G35H100-04SR3? Cellular base station applications, particularly those requiring wide instantaneous bandwidth.
- How should the device be biased? The correct biasing sequence involves setting VGS to –5 V, then turning on VDS to the nominal supply voltage, and finally increasing VGS until the desired IDS current is attained.
- What is the storage temperature range of the A3G35H100-04SR3? The storage temperature range is –65 to +150 °C.
- What is the operating junction temperature range of the A3G35H100-04SR3? The operating junction temperature range is –55 to +225 °C.
